Abstract
Carrier transport mechanisms and a barrier height of Ni contacts to p-type GaN (p-GaN) with the structure of a transmission line model were investigated from current-voltage measurements in this study. We find that the method can be adopted for p-GaN, especially in the case where high-quality ohmic contacts are difficult to make. This provides a rational guideline for the development of processing methodologies to estimate the barrier-height value for Schottky diodes without ohmic contacts.
| Original language | English |
|---|---|
| Article number | 095107 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 41 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2008 May 7 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films
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Lin, Y-J., Lee, C. T., Chang, S. S., & Chang, H. C. (2008). Electronic transport and Schottky barrier height of Ni contact on p-type GaN. Journal of Physics D: Applied Physics, 41(9), [095107]. https://doi.org/10.1088/0022-3727/41/9/095107