Electronic transport and Schottky barrier height of Ni contact on p-type GaN

Yow-Jon Lin, Ching Ting Lee, Shih Sheng Chang, Hsing Cheng Chang

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Carrier transport mechanisms and a barrier height of Ni contacts to p-type GaN (p-GaN) with the structure of a transmission line model were investigated from current-voltage measurements in this study. We find that the method can be adopted for p-GaN, especially in the case where high-quality ohmic contacts are difficult to make. This provides a rational guideline for the development of processing methodologies to estimate the barrier-height value for Schottky diodes without ohmic contacts.

Original languageEnglish
Article number095107
JournalJournal of Physics D: Applied Physics
Volume41
Issue number9
DOIs
Publication statusPublished - 2008 May 7

Fingerprint

Ohmic contacts
electric contacts
Carrier transport
Voltage measurement
Electric current measurement
electronics
Electric lines
Diodes
Schottky diodes
electrical measurement
transmission lines
Processing
methodology
estimates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

Lin, Yow-Jon ; Lee, Ching Ting ; Chang, Shih Sheng ; Chang, Hsing Cheng. / Electronic transport and Schottky barrier height of Ni contact on p-type GaN. In: Journal of Physics D: Applied Physics. 2008 ; Vol. 41, No. 9.
@article{40e544fcf9d84cfc9d54ce9f1e1d5973,
title = "Electronic transport and Schottky barrier height of Ni contact on p-type GaN",
abstract = "Carrier transport mechanisms and a barrier height of Ni contacts to p-type GaN (p-GaN) with the structure of a transmission line model were investigated from current-voltage measurements in this study. We find that the method can be adopted for p-GaN, especially in the case where high-quality ohmic contacts are difficult to make. This provides a rational guideline for the development of processing methodologies to estimate the barrier-height value for Schottky diodes without ohmic contacts.",
author = "Yow-Jon Lin and Lee, {Ching Ting} and Chang, {Shih Sheng} and Chang, {Hsing Cheng}",
year = "2008",
month = "5",
day = "7",
doi = "10.1088/0022-3727/41/9/095107",
language = "English",
volume = "41",
journal = "Journal Physics D: Applied Physics",
issn = "0022-3727",
publisher = "IOP Publishing Ltd.",
number = "9",

}

Electronic transport and Schottky barrier height of Ni contact on p-type GaN. / Lin, Yow-Jon; Lee, Ching Ting; Chang, Shih Sheng; Chang, Hsing Cheng.

In: Journal of Physics D: Applied Physics, Vol. 41, No. 9, 095107, 07.05.2008.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electronic transport and Schottky barrier height of Ni contact on p-type GaN

AU - Lin, Yow-Jon

AU - Lee, Ching Ting

AU - Chang, Shih Sheng

AU - Chang, Hsing Cheng

PY - 2008/5/7

Y1 - 2008/5/7

N2 - Carrier transport mechanisms and a barrier height of Ni contacts to p-type GaN (p-GaN) with the structure of a transmission line model were investigated from current-voltage measurements in this study. We find that the method can be adopted for p-GaN, especially in the case where high-quality ohmic contacts are difficult to make. This provides a rational guideline for the development of processing methodologies to estimate the barrier-height value for Schottky diodes without ohmic contacts.

AB - Carrier transport mechanisms and a barrier height of Ni contacts to p-type GaN (p-GaN) with the structure of a transmission line model were investigated from current-voltage measurements in this study. We find that the method can be adopted for p-GaN, especially in the case where high-quality ohmic contacts are difficult to make. This provides a rational guideline for the development of processing methodologies to estimate the barrier-height value for Schottky diodes without ohmic contacts.

UR - http://www.scopus.com/inward/record.url?scp=42549154202&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=42549154202&partnerID=8YFLogxK

U2 - 10.1088/0022-3727/41/9/095107

DO - 10.1088/0022-3727/41/9/095107

M3 - Article

VL - 41

JO - Journal Physics D: Applied Physics

JF - Journal Physics D: Applied Physics

SN - 0022-3727

IS - 9

M1 - 095107

ER -