Electronic transport and Schottky barrier height of Ni contact on p-type GaN

Yow-Jon Lin, Ching Ting Lee, Shih Sheng Chang, Hsing Cheng Chang

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Carrier transport mechanisms and a barrier height of Ni contacts to p-type GaN (p-GaN) with the structure of a transmission line model were investigated from current-voltage measurements in this study. We find that the method can be adopted for p-GaN, especially in the case where high-quality ohmic contacts are difficult to make. This provides a rational guideline for the development of processing methodologies to estimate the barrier-height value for Schottky diodes without ohmic contacts.

Original languageEnglish
Article number095107
JournalJournal of Physics D: Applied Physics
Issue number9
Publication statusPublished - 2008 May 7


All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

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