Abstract
Carrier transport mechanisms and a barrier height of Ni contacts to p-type GaN (p-GaN) with the structure of a transmission line model were investigated from current-voltage measurements in this study. We find that the method can be adopted for p-GaN, especially in the case where high-quality ohmic contacts are difficult to make. This provides a rational guideline for the development of processing methodologies to estimate the barrier-height value for Schottky diodes without ohmic contacts.
| Original language | English |
|---|---|
| Article number | 095107 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 41 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 2008 May 7 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films
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Electronic transport and Schottky barrier height of Ni contact on p-type GaN. / Lin, Yow-Jon; Lee, Ching Ting; Chang, Shih Sheng; Chang, Hsing Cheng.
In: Journal of Physics D: Applied Physics, Vol. 41, No. 9, 095107, 07.05.2008.Research output: Contribution to journal › Article
TY - JOUR
T1 - Electronic transport and Schottky barrier height of Ni contact on p-type GaN
AU - Lin, Yow-Jon
AU - Lee, Ching Ting
AU - Chang, Shih Sheng
AU - Chang, Hsing Cheng
PY - 2008/5/7
Y1 - 2008/5/7
N2 - Carrier transport mechanisms and a barrier height of Ni contacts to p-type GaN (p-GaN) with the structure of a transmission line model were investigated from current-voltage measurements in this study. We find that the method can be adopted for p-GaN, especially in the case where high-quality ohmic contacts are difficult to make. This provides a rational guideline for the development of processing methodologies to estimate the barrier-height value for Schottky diodes without ohmic contacts.
AB - Carrier transport mechanisms and a barrier height of Ni contacts to p-type GaN (p-GaN) with the structure of a transmission line model were investigated from current-voltage measurements in this study. We find that the method can be adopted for p-GaN, especially in the case where high-quality ohmic contacts are difficult to make. This provides a rational guideline for the development of processing methodologies to estimate the barrier-height value for Schottky diodes without ohmic contacts.
UR - http://www.scopus.com/inward/record.url?scp=42549154202&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=42549154202&partnerID=8YFLogxK
U2 - 10.1088/0022-3727/41/9/095107
DO - 10.1088/0022-3727/41/9/095107
M3 - Article
AN - SCOPUS:42549154202
VL - 41
JO - Journal Physics D: Applied Physics
JF - Journal Physics D: Applied Physics
SN - 0022-3727
IS - 9
M1 - 095107
ER -