Electronic transport and Schottky barrier height of Ni contact on p-type GaN

Yow-Jon Lin; Ching Ting Lee; Shih Sheng Chang; Hsing Cheng Chang

doi:10.1088/0022-3727/41/9/095107

Electronic transport and Schottky barrier height of Ni contact on p-type GaN

Yow-Jon Lin, Ching Ting Lee, Shih Sheng Chang, Hsing Cheng Chang

Graduate Institute of Photonics

Research output: Contribution to journal › Article

8 Citations (Scopus)

Abstract

Carrier transport mechanisms and a barrier height of Ni contacts to p-type GaN (p-GaN) with the structure of a transmission line model were investigated from current-voltage measurements in this study. We find that the method can be adopted for p-GaN, especially in the case where high-quality ohmic contacts are difficult to make. This provides a rational guideline for the development of processing methodologies to estimate the barrier-height value for Schottky diodes without ohmic contacts.

Original language	English
Article number	095107
Journal	Journal of Physics D: Applied Physics
Volume	41
Issue number	9
DOIs	https://doi.org/10.1088/0022-3727/41/9/095107
Publication status	Published - 2008 May 7

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

Cite this

Lin, Y-J., Lee, C. T., Chang, S. S., & Chang, H. C. (2008). Electronic transport and Schottky barrier height of Ni contact on p-type GaN. Journal of Physics D: Applied Physics, 41(9), [095107]. https://doi.org/10.1088/0022-3727/41/9/095107

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10.1088/0022-3727/41/9/095107