Electronic properties of annealed pentacene films in air at various temperatures up to 400 K

Hou Yen Tsao; Yow Jon Lin

doi:10.1063/1.4752739

Electronic properties of annealed pentacene films in air at various temperatures up to 400 K

Hou Yen Tsao, Yow Jon Lin

Graduate Institute of Photonics

Research output: Contribution to journal › Article

9 Citations (Scopus)

Abstract

This study examined the electronic properties of annealed pentacene films in air at various temperatures up to 400 K for 1 min. The carrier mobility in pentacene samples exhibits unexpectedly strong temperature dependence, implying the domination of tunneling (hopping) at low (high) temperatures. Upon annealing temperature, the molecule structure is not affected. The room-temperature mobility was drastically increased from 2.42 to 4.73 cm ²/V-s by thermal annealing at 350 K. Hall-effect analysis by using the polaron theory revealed that the enhanced mobility by proper annealing is due to the increased spacing between molecules.

Original language	English
Article number	113306
Journal	Applied Physics Letters
Volume	101
Issue number	11
DOIs	https://doi.org/10.1063/1.4752739
Publication status	Published - 2012 Sep 10

Fingerprint

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Cite this

Tsao, H. Y., & Lin, Y. J. (2012). Electronic properties of annealed pentacene films in air at various temperatures up to 400 K. Applied Physics Letters, 101(11), [113306]. https://doi.org/10.1063/1.4752739

@article{bec35d7d2ff64d12a2c2174072bf77aa,

title = "Electronic properties of annealed pentacene films in air at various temperatures up to 400 K",

abstract = "This study examined the electronic properties of annealed pentacene films in air at various temperatures up to 400 K for 1 min. The carrier mobility in pentacene samples exhibits unexpectedly strong temperature dependence, implying the domination of tunneling (hopping) at low (high) temperatures. Upon annealing temperature, the molecule structure is not affected. The room-temperature mobility was drastically increased from 2.42 to 4.73 cm 2/V-s by thermal annealing at 350 K. Hall-effect analysis by using the polaron theory revealed that the enhanced mobility by proper annealing is due to the increased spacing between molecules.",

author = "Tsao, {Hou Yen} and Lin, {Yow Jon}",

year = "2012",

month = "9",

day = "10",

doi = "10.1063/1.4752739",

language = "English",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "11",

}

TY - JOUR

T1 - Electronic properties of annealed pentacene films in air at various temperatures up to 400 K

AU - Tsao, Hou Yen

AU - Lin, Yow Jon

PY - 2012/9/10

Y1 - 2012/9/10

N2 - This study examined the electronic properties of annealed pentacene films in air at various temperatures up to 400 K for 1 min. The carrier mobility in pentacene samples exhibits unexpectedly strong temperature dependence, implying the domination of tunneling (hopping) at low (high) temperatures. Upon annealing temperature, the molecule structure is not affected. The room-temperature mobility was drastically increased from 2.42 to 4.73 cm 2/V-s by thermal annealing at 350 K. Hall-effect analysis by using the polaron theory revealed that the enhanced mobility by proper annealing is due to the increased spacing between molecules.

AB - This study examined the electronic properties of annealed pentacene films in air at various temperatures up to 400 K for 1 min. The carrier mobility in pentacene samples exhibits unexpectedly strong temperature dependence, implying the domination of tunneling (hopping) at low (high) temperatures. Upon annealing temperature, the molecule structure is not affected. The room-temperature mobility was drastically increased from 2.42 to 4.73 cm 2/V-s by thermal annealing at 350 K. Hall-effect analysis by using the polaron theory revealed that the enhanced mobility by proper annealing is due to the increased spacing between molecules.

UR - http://www.scopus.com/inward/record.url?scp=84866307422&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84866307422&partnerID=8YFLogxK

U2 - 10.1063/1.4752739

DO - 10.1063/1.4752739

M3 - Article

AN - SCOPUS:84866307422

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

M1 - 113306

ER -

Access to Document

10.1063/1.4752739