Electronic and surface properties of pentacene films deposited on SiO 2 prepared by the sol-gel and thermally grown methods

Chi Jie Dai, Hou Yen Tsao, Yow Jon Lin, Day Shan Liu

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

This study investigates the effect of different types of SiO2 on the electronic and surface properties of pentacene films. Developing better contacts on dielectrics is one of the main challenges for pentacene-based transistor technology. The water contact angle variation indicates more hydrophobic thermally grown SiO2 surfaces than sol-gel SiO 2 surfaces, suggesting that the thermally grown SiO2 dielectric enables a better molecular arrangement as the pentacene layer is deposited. It is found that the carrier mobility in pentacene on thermally grown SiO2 dielectrics is higher than that in pentacene on sol-gel SiO2 dielectrics. The Hall-effect analysis by using the polaron theory revealed that the enhanced carrier mobility is due to the increased spacing between molecules.

Original languageEnglish
Pages (from-to)159-163
Number of pages5
JournalThin Solid Films
Volume552
DOIs
Publication statusPublished - 2014 Feb 3

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this