Electronic and surface properties of pentacene films deposited on SiO 2 prepared by the sol-gel and thermally grown methods

Chi Jie Dai, Hou Yen Tsao, Yow-Jon Lin, Day Shan Liu

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

This study investigates the effect of different types of SiO2 on the electronic and surface properties of pentacene films. Developing better contacts on dielectrics is one of the main challenges for pentacene-based transistor technology. The water contact angle variation indicates more hydrophobic thermally grown SiO2 surfaces than sol-gel SiO 2 surfaces, suggesting that the thermally grown SiO2 dielectric enables a better molecular arrangement as the pentacene layer is deposited. It is found that the carrier mobility in pentacene on thermally grown SiO2 dielectrics is higher than that in pentacene on sol-gel SiO2 dielectrics. The Hall-effect analysis by using the polaron theory revealed that the enhanced carrier mobility is due to the increased spacing between molecules.

Original languageEnglish
Pages (from-to)159-163
Number of pages5
JournalThin Solid Films
Volume552
DOIs
Publication statusPublished - 2014 Feb 3

Fingerprint

Electronic properties
surface properties
Sol-gels
Surface properties
gels
Carrier mobility
carrier mobility
electronics
Hall effect
Gene Conversion
Contact angle
Transistors
transistors
spacing
Molecules
pentacene
Water
water
molecules

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

@article{2c210dfdb044451282146921d0617d71,
title = "Electronic and surface properties of pentacene films deposited on SiO 2 prepared by the sol-gel and thermally grown methods",
abstract = "This study investigates the effect of different types of SiO2 on the electronic and surface properties of pentacene films. Developing better contacts on dielectrics is one of the main challenges for pentacene-based transistor technology. The water contact angle variation indicates more hydrophobic thermally grown SiO2 surfaces than sol-gel SiO 2 surfaces, suggesting that the thermally grown SiO2 dielectric enables a better molecular arrangement as the pentacene layer is deposited. It is found that the carrier mobility in pentacene on thermally grown SiO2 dielectrics is higher than that in pentacene on sol-gel SiO2 dielectrics. The Hall-effect analysis by using the polaron theory revealed that the enhanced carrier mobility is due to the increased spacing between molecules.",
author = "Dai, {Chi Jie} and Tsao, {Hou Yen} and Yow-Jon Lin and Liu, {Day Shan}",
year = "2014",
month = "2",
day = "3",
doi = "10.1016/j.tsf.2013.12.056",
language = "English",
volume = "552",
pages = "159--163",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

Electronic and surface properties of pentacene films deposited on SiO 2 prepared by the sol-gel and thermally grown methods. / Dai, Chi Jie; Tsao, Hou Yen; Lin, Yow-Jon; Liu, Day Shan.

In: Thin Solid Films, Vol. 552, 03.02.2014, p. 159-163.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electronic and surface properties of pentacene films deposited on SiO 2 prepared by the sol-gel and thermally grown methods

AU - Dai, Chi Jie

AU - Tsao, Hou Yen

AU - Lin, Yow-Jon

AU - Liu, Day Shan

PY - 2014/2/3

Y1 - 2014/2/3

N2 - This study investigates the effect of different types of SiO2 on the electronic and surface properties of pentacene films. Developing better contacts on dielectrics is one of the main challenges for pentacene-based transistor technology. The water contact angle variation indicates more hydrophobic thermally grown SiO2 surfaces than sol-gel SiO 2 surfaces, suggesting that the thermally grown SiO2 dielectric enables a better molecular arrangement as the pentacene layer is deposited. It is found that the carrier mobility in pentacene on thermally grown SiO2 dielectrics is higher than that in pentacene on sol-gel SiO2 dielectrics. The Hall-effect analysis by using the polaron theory revealed that the enhanced carrier mobility is due to the increased spacing between molecules.

AB - This study investigates the effect of different types of SiO2 on the electronic and surface properties of pentacene films. Developing better contacts on dielectrics is one of the main challenges for pentacene-based transistor technology. The water contact angle variation indicates more hydrophobic thermally grown SiO2 surfaces than sol-gel SiO 2 surfaces, suggesting that the thermally grown SiO2 dielectric enables a better molecular arrangement as the pentacene layer is deposited. It is found that the carrier mobility in pentacene on thermally grown SiO2 dielectrics is higher than that in pentacene on sol-gel SiO2 dielectrics. The Hall-effect analysis by using the polaron theory revealed that the enhanced carrier mobility is due to the increased spacing between molecules.

UR - http://www.scopus.com/inward/record.url?scp=84892800822&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84892800822&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2013.12.056

DO - 10.1016/j.tsf.2013.12.056

M3 - Article

AN - SCOPUS:84892800822

VL - 552

SP - 159

EP - 163

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -