Electromagnetic characteristics of a novel radio-frequency complementary metal-oxide-semiconductor active inductor

Yeong-Lin Lai, Chun Yi Zheng

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

This paper presents a novel radio-frequency (RF) complementary metal-oxide-semiconductor (CMOS) active inductor for the design of RF integrated circuits (RFICs). The electromagnetic characteristics of the RF CMOS gyrator-based active inductor were investigated. The RF CMOS gyrator-based active inductor utilized a loss compensation circuit to produce equivalent negative resistance and compensate for the loss of transistors and bias circuitry. The proposed active inductor realized both high-inductance and high-quality factor. The quality factor was greater than 10 from 2.5 to 3.5 GHz. The maximum quality factor was 76.2. The active inductor was applied to the design of a microwave notch filter. The active notch filter with the RF CMOS gyrator-based active inductor was able to reject microwave image signals for modern wireless communication systems.

Original languageEnglish
Article number6027790
Pages (from-to)2768-2771
Number of pages4
JournalIEEE Transactions on Magnetics
Volume47
Issue number10
DOIs
Publication statusPublished - 2011 Oct 1

Fingerprint

Metals
Gyrators
Notch filters
Microwave filters
Negative resistance
Active filters
Inductance
Integrated circuits
Oxide semiconductors
Communication systems
Transistors
Microwaves
Networks (circuits)

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

@article{017e9481a63741d8aba53820d10115c0,
title = "Electromagnetic characteristics of a novel radio-frequency complementary metal-oxide-semiconductor active inductor",
abstract = "This paper presents a novel radio-frequency (RF) complementary metal-oxide-semiconductor (CMOS) active inductor for the design of RF integrated circuits (RFICs). The electromagnetic characteristics of the RF CMOS gyrator-based active inductor were investigated. The RF CMOS gyrator-based active inductor utilized a loss compensation circuit to produce equivalent negative resistance and compensate for the loss of transistors and bias circuitry. The proposed active inductor realized both high-inductance and high-quality factor. The quality factor was greater than 10 from 2.5 to 3.5 GHz. The maximum quality factor was 76.2. The active inductor was applied to the design of a microwave notch filter. The active notch filter with the RF CMOS gyrator-based active inductor was able to reject microwave image signals for modern wireless communication systems.",
author = "Yeong-Lin Lai and Zheng, {Chun Yi}",
year = "2011",
month = "10",
day = "1",
doi = "10.1109/TMAG.2011.2157116",
language = "English",
volume = "47",
pages = "2768--2771",
journal = "IEEE Transactions on Magnetics",
issn = "0018-9464",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "10",

}

Electromagnetic characteristics of a novel radio-frequency complementary metal-oxide-semiconductor active inductor. / Lai, Yeong-Lin; Zheng, Chun Yi.

In: IEEE Transactions on Magnetics, Vol. 47, No. 10, 6027790, 01.10.2011, p. 2768-2771.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electromagnetic characteristics of a novel radio-frequency complementary metal-oxide-semiconductor active inductor

AU - Lai, Yeong-Lin

AU - Zheng, Chun Yi

PY - 2011/10/1

Y1 - 2011/10/1

N2 - This paper presents a novel radio-frequency (RF) complementary metal-oxide-semiconductor (CMOS) active inductor for the design of RF integrated circuits (RFICs). The electromagnetic characteristics of the RF CMOS gyrator-based active inductor were investigated. The RF CMOS gyrator-based active inductor utilized a loss compensation circuit to produce equivalent negative resistance and compensate for the loss of transistors and bias circuitry. The proposed active inductor realized both high-inductance and high-quality factor. The quality factor was greater than 10 from 2.5 to 3.5 GHz. The maximum quality factor was 76.2. The active inductor was applied to the design of a microwave notch filter. The active notch filter with the RF CMOS gyrator-based active inductor was able to reject microwave image signals for modern wireless communication systems.

AB - This paper presents a novel radio-frequency (RF) complementary metal-oxide-semiconductor (CMOS) active inductor for the design of RF integrated circuits (RFICs). The electromagnetic characteristics of the RF CMOS gyrator-based active inductor were investigated. The RF CMOS gyrator-based active inductor utilized a loss compensation circuit to produce equivalent negative resistance and compensate for the loss of transistors and bias circuitry. The proposed active inductor realized both high-inductance and high-quality factor. The quality factor was greater than 10 from 2.5 to 3.5 GHz. The maximum quality factor was 76.2. The active inductor was applied to the design of a microwave notch filter. The active notch filter with the RF CMOS gyrator-based active inductor was able to reject microwave image signals for modern wireless communication systems.

UR - http://www.scopus.com/inward/record.url?scp=80053539940&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=80053539940&partnerID=8YFLogxK

U2 - 10.1109/TMAG.2011.2157116

DO - 10.1109/TMAG.2011.2157116

M3 - Article

AN - SCOPUS:80053539940

VL - 47

SP - 2768

EP - 2771

JO - IEEE Transactions on Magnetics

JF - IEEE Transactions on Magnetics

SN - 0018-9464

IS - 10

M1 - 6027790

ER -