Electrode design optimization of a CMOS fringing-field capacitive sensor

Yu Ting Li, Yen Lin Tzeng, Chih Ming Chao, Kerwin Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The capacitance of a micro-capacitive-sensor is mainly depends on its electrode structures, electrode arrangement and the dielectric strength of its surrounding. This paper presents a novel electrode design to enhance the fringing-field and to increase the capacitance of a CMOS MEMS capacitive sensor. The design optimization process is assisted by COMSOL, a multi-physics finite-element simulation tool. The design goal is to maximize the fringing-field of capacitive sensor. The capacitor has been built with a VLSI Schmitt trigger, and temperature compensator to probe the capacitance. The experiment results show that proposed capacitor can achieve the capacitance to 75.2 pF.

Original languageEnglish
Title of host publication2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012
Pages603-606
Number of pages4
DOIs
Publication statusPublished - 2012 Jun 1
Event7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012 - Kyoto, Japan
Duration: 2012 Mar 52012 Mar 8

Publication series

Name2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012

Other

Other7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012
CountryJapan
CityKyoto
Period12-03-0512-03-08

Fingerprint

Capacitive sensors
Capacitance
Electrodes
Capacitors
MEMS
Physics
Design optimization
Experiments
Temperature

All Science Journal Classification (ASJC) codes

  • Engineering (miscellaneous)

Cite this

Li, Y. T., Tzeng, Y. L., Chao, C. M., & Wang, K. (2012). Electrode design optimization of a CMOS fringing-field capacitive sensor. In 2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012 (pp. 603-606). [6196848] (2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012). https://doi.org/10.1109/NEMS.2012.6196848
Li, Yu Ting ; Tzeng, Yen Lin ; Chao, Chih Ming ; Wang, Kerwin. / Electrode design optimization of a CMOS fringing-field capacitive sensor. 2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012. 2012. pp. 603-606 (2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012).
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Li, YT, Tzeng, YL, Chao, CM & Wang, K 2012, Electrode design optimization of a CMOS fringing-field capacitive sensor. in 2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012., 6196848, 2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012, pp. 603-606, 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012, Kyoto, Japan, 12-03-05. https://doi.org/10.1109/NEMS.2012.6196848

Electrode design optimization of a CMOS fringing-field capacitive sensor. / Li, Yu Ting; Tzeng, Yen Lin; Chao, Chih Ming; Wang, Kerwin.

2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012. 2012. p. 603-606 6196848 (2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - The capacitance of a micro-capacitive-sensor is mainly depends on its electrode structures, electrode arrangement and the dielectric strength of its surrounding. This paper presents a novel electrode design to enhance the fringing-field and to increase the capacitance of a CMOS MEMS capacitive sensor. The design optimization process is assisted by COMSOL, a multi-physics finite-element simulation tool. The design goal is to maximize the fringing-field of capacitive sensor. The capacitor has been built with a VLSI Schmitt trigger, and temperature compensator to probe the capacitance. The experiment results show that proposed capacitor can achieve the capacitance to 75.2 pF.

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Li YT, Tzeng YL, Chao CM, Wang K. Electrode design optimization of a CMOS fringing-field capacitive sensor. In 2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012. 2012. p. 603-606. 6196848. (2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012). https://doi.org/10.1109/NEMS.2012.6196848