Electrode design optimization of a CMOS fringing-field capacitive sensor

Yu Ting Li; Yen Lin Tzeng; Chih Ming Chao; Kerwin Wang

doi:10.1109/NEMS.2012.6196848

Electrode design optimization of a CMOS fringing-field capacitive sensor

Yu Ting Li, Yen Lin Tzeng, Chih Ming Chao, Kerwin Wang

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

Abstract

The capacitance of a micro-capacitive-sensor is mainly depends on its electrode structures, electrode arrangement and the dielectric strength of its surrounding. This paper presents a novel electrode design to enhance the fringing-field and to increase the capacitance of a CMOS MEMS capacitive sensor. The design optimization process is assisted by COMSOL, a multi-physics finite-element simulation tool. The design goal is to maximize the fringing-field of capacitive sensor. The capacitor has been built with a VLSI Schmitt trigger, and temperature compensator to probe the capacitance. The experiment results show that proposed capacitor can achieve the capacitance to 75.2 pF.

Original language	English
Title of host publication	2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012
Pages	603-606
Number of pages	4
DOIs	https://doi.org/10.1109/NEMS.2012.6196848
Publication status	Published - 2012 Jun 1
Event	7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012 - Kyoto, Japan Duration: 2012 Mar 5 → 2012 Mar 8

Publication series

Name	2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012

Other

Other	7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012
Country	Japan
City	Kyoto
Period	12-03-05 → 12-03-08

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All Science Journal Classification (ASJC) codes

Engineering (miscellaneous)

Cite this

Li, Y. T., Tzeng, Y. L., Chao, C. M., & Wang, K. (2012). Electrode design optimization of a CMOS fringing-field capacitive sensor. In 2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012 (pp. 603-606). [6196848] (2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012). https://doi.org/10.1109/NEMS.2012.6196848

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abstract = "The capacitance of a micro-capacitive-sensor is mainly depends on its electrode structures, electrode arrangement and the dielectric strength of its surrounding. This paper presents a novel electrode design to enhance the fringing-field and to increase the capacitance of a CMOS MEMS capacitive sensor. The design optimization process is assisted by COMSOL, a multi-physics finite-element simulation tool. The design goal is to maximize the fringing-field of capacitive sensor. The capacitor has been built with a VLSI Schmitt trigger, and temperature compensator to probe the capacitance. The experiment results show that proposed capacitor can achieve the capacitance to 75.2 pF.",

author = "Li, {Yu Ting} and Tzeng, {Yen Lin} and Chao, {Chih Ming} and Kerwin Wang",

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Li, YT, Tzeng, YL, Chao, CM & Wang, K 2012, Electrode design optimization of a CMOS fringing-field capacitive sensor. in 2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012., 6196848, 2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012, pp. 603-606, 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012, Kyoto, Japan, 12-03-05. https://doi.org/10.1109/NEMS.2012.6196848

Electrode design optimization of a CMOS fringing-field capacitive sensor. / Li, Yu Ting; Tzeng, Yen Lin; Chao, Chih Ming; Wang, Kerwin.

2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012. 2012. p. 603-606 6196848 (2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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N2 - The capacitance of a micro-capacitive-sensor is mainly depends on its electrode structures, electrode arrangement and the dielectric strength of its surrounding. This paper presents a novel electrode design to enhance the fringing-field and to increase the capacitance of a CMOS MEMS capacitive sensor. The design optimization process is assisted by COMSOL, a multi-physics finite-element simulation tool. The design goal is to maximize the fringing-field of capacitive sensor. The capacitor has been built with a VLSI Schmitt trigger, and temperature compensator to probe the capacitance. The experiment results show that proposed capacitor can achieve the capacitance to 75.2 pF.

AB - The capacitance of a micro-capacitive-sensor is mainly depends on its electrode structures, electrode arrangement and the dielectric strength of its surrounding. This paper presents a novel electrode design to enhance the fringing-field and to increase the capacitance of a CMOS MEMS capacitive sensor. The design optimization process is assisted by COMSOL, a multi-physics finite-element simulation tool. The design goal is to maximize the fringing-field of capacitive sensor. The capacitor has been built with a VLSI Schmitt trigger, and temperature compensator to probe the capacitance. The experiment results show that proposed capacitor can achieve the capacitance to 75.2 pF.

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Li YT, Tzeng YL, Chao CM, Wang K. Electrode design optimization of a CMOS fringing-field capacitive sensor. In 2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012. 2012. p. 603-606. 6196848. (2012 7th IEEE International Conference on Nano/Micro Engineered and Molecular Systems, NEMS 2012). https://doi.org/10.1109/NEMS.2012.6196848

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10.1109/NEMS.2012.6196848