The activation of time-dependent Hall effect measurements on p-GaN and the mechanism of nonalloyed ohmic formation for platinum (Pt) contacts to p-GaN activated in air were investigated. It was observed from photoluminescence that the hydrogenated gallium (Ga) vacancies (VGaH2) were formed during the activation process. As hydrogen was absorbed by Pt, V GaH2 in p-GaN near the surface was transformed into V Ga after Pt deposition. Results shows that a large number of V Ga at the Pt/p-GaN interface lead to the formation of ohmic contacts due to the occurrence of the tunneling transmission for holes at the interface.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)