Electrical properties of Pt contacts on p-GaN activated in air

Yow Jon Lin, Kuo Chen Wu

Research output: Contribution to journalArticle

11 Citations (Scopus)

Abstract

The activation of time-dependent Hall effect measurements on p-GaN and the mechanism of nonalloyed ohmic formation for platinum (Pt) contacts to p-GaN activated in air were investigated. It was observed from photoluminescence that the hydrogenated gallium (Ga) vacancies (VGaH2) were formed during the activation process. As hydrogen was absorbed by Pt, V GaH2 in p-GaN near the surface was transformed into V Ga after Pt deposition. Results shows that a large number of V Ga at the Pt/p-GaN interface lead to the formation of ohmic contacts due to the occurrence of the tunneling transmission for holes at the interface.

Original languageEnglish
Pages (from-to)1501-1503
Number of pages3
JournalApplied Physics Letters
Volume84
Issue number9
DOIs
Publication statusPublished - 2004 Mar 1

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platinum
electrical properties
gallium
air
activation
Hall effect
electric contacts
occurrences
photoluminescence
hydrogen

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "The activation of time-dependent Hall effect measurements on p-GaN and the mechanism of nonalloyed ohmic formation for platinum (Pt) contacts to p-GaN activated in air were investigated. It was observed from photoluminescence that the hydrogenated gallium (Ga) vacancies (VGaH2) were formed during the activation process. As hydrogen was absorbed by Pt, V GaH2 in p-GaN near the surface was transformed into V Ga after Pt deposition. Results shows that a large number of V Ga at the Pt/p-GaN interface lead to the formation of ohmic contacts due to the occurrence of the tunneling transmission for holes at the interface.",
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Electrical properties of Pt contacts on p-GaN activated in air. / Lin, Yow Jon; Wu, Kuo Chen.

In: Applied Physics Letters, Vol. 84, No. 9, 01.03.2004, p. 1501-1503.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electrical properties of Pt contacts on p-GaN activated in air

AU - Lin, Yow Jon

AU - Wu, Kuo Chen

PY - 2004/3/1

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N2 - The activation of time-dependent Hall effect measurements on p-GaN and the mechanism of nonalloyed ohmic formation for platinum (Pt) contacts to p-GaN activated in air were investigated. It was observed from photoluminescence that the hydrogenated gallium (Ga) vacancies (VGaH2) were formed during the activation process. As hydrogen was absorbed by Pt, V GaH2 in p-GaN near the surface was transformed into V Ga after Pt deposition. Results shows that a large number of V Ga at the Pt/p-GaN interface lead to the formation of ohmic contacts due to the occurrence of the tunneling transmission for holes at the interface.

AB - The activation of time-dependent Hall effect measurements on p-GaN and the mechanism of nonalloyed ohmic formation for platinum (Pt) contacts to p-GaN activated in air were investigated. It was observed from photoluminescence that the hydrogenated gallium (Ga) vacancies (VGaH2) were formed during the activation process. As hydrogen was absorbed by Pt, V GaH2 in p-GaN near the surface was transformed into V Ga after Pt deposition. Results shows that a large number of V Ga at the Pt/p-GaN interface lead to the formation of ohmic contacts due to the occurrence of the tunneling transmission for holes at the interface.

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