Electrical properties of NiAu and Au contacts on p-type GaN

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The electrical properties of NiAu and Au contacts on p-type GaN (p-GaN) were investigated in this study. From the experimental result, it is suggested that the current-voltage characteristic of AuNip-GaN is better than that of Aup-GaN. The secondary-ion mass spectroscopy measurements revealed that hydrogen is effectively removed from the p-GaN layer by the existence of the Ni film. These results suggest that a Ni film of AuNip-GaN significantly enhances hydrogen desorption from the p-GaN film, which leads to an increase in the hole concentration, the occurrence of the tunneling transmission for holes at the interface, and the improvement of electrical properties of AuNip-GaN.

Original languageEnglish
Pages (from-to)48-50
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume23
Issue number1
DOIs
Publication statusPublished - 2005 Dec 1

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this