Electrical properties of NiAu and Au contacts on p-type GaN

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Abstract

The electrical properties of NiAu and Au contacts on p-type GaN (p-GaN) were investigated in this study. From the experimental result, it is suggested that the current-voltage characteristic of AuNip-GaN is better than that of Aup-GaN. The secondary-ion mass spectroscopy measurements revealed that hydrogen is effectively removed from the p-GaN layer by the existence of the Ni film. These results suggest that a Ni film of AuNip-GaN significantly enhances hydrogen desorption from the p-GaN film, which leads to an increase in the hole concentration, the occurrence of the tunneling transmission for holes at the interface, and the improvement of electrical properties of AuNip-GaN.

Original languageEnglish
Pages (from-to)48-50
Number of pages3
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume23
Issue number1
DOIs
Publication statusPublished - 2005 Dec 1

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electric contacts
Electric properties
electrical properties
Hole concentration
Hydrogen
hydrogen
Current voltage characteristics
Desorption
mass spectroscopy
desorption
Spectroscopy
occurrences
Ions
electric potential
ions

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Surfaces and Interfaces
  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "The electrical properties of NiAu and Au contacts on p-type GaN (p-GaN) were investigated in this study. From the experimental result, it is suggested that the current-voltage characteristic of AuNip-GaN is better than that of Aup-GaN. The secondary-ion mass spectroscopy measurements revealed that hydrogen is effectively removed from the p-GaN layer by the existence of the Ni film. These results suggest that a Ni film of AuNip-GaN significantly enhances hydrogen desorption from the p-GaN film, which leads to an increase in the hole concentration, the occurrence of the tunneling transmission for holes at the interface, and the improvement of electrical properties of AuNip-GaN.",
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N2 - The electrical properties of NiAu and Au contacts on p-type GaN (p-GaN) were investigated in this study. From the experimental result, it is suggested that the current-voltage characteristic of AuNip-GaN is better than that of Aup-GaN. The secondary-ion mass spectroscopy measurements revealed that hydrogen is effectively removed from the p-GaN layer by the existence of the Ni film. These results suggest that a Ni film of AuNip-GaN significantly enhances hydrogen desorption from the p-GaN film, which leads to an increase in the hole concentration, the occurrence of the tunneling transmission for holes at the interface, and the improvement of electrical properties of AuNip-GaN.

AB - The electrical properties of NiAu and Au contacts on p-type GaN (p-GaN) were investigated in this study. From the experimental result, it is suggested that the current-voltage characteristic of AuNip-GaN is better than that of Aup-GaN. The secondary-ion mass spectroscopy measurements revealed that hydrogen is effectively removed from the p-GaN layer by the existence of the Ni film. These results suggest that a Ni film of AuNip-GaN significantly enhances hydrogen desorption from the p-GaN film, which leads to an increase in the hole concentration, the occurrence of the tunneling transmission for holes at the interface, and the improvement of electrical properties of AuNip-GaN.

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