The electrical properties of NiAu and Au contacts on p-type GaN (p-GaN) were investigated in this study. From the experimental result, it is suggested that the current-voltage characteristic of AuNip-GaN is better than that of Aup-GaN. The secondary-ion mass spectroscopy measurements revealed that hydrogen is effectively removed from the p-GaN layer by the existence of the Ni film. These results suggest that a Ni film of AuNip-GaN significantly enhances hydrogen desorption from the p-GaN film, which leads to an increase in the hole concentration, the occurrence of the tunneling transmission for holes at the interface, and the improvement of electrical properties of AuNip-GaN.
|Number of pages||3|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2005 Dec 1|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering