Electrical properties of CuxZnySnS4 films with different Cu/Zn ratios

Cheng He Ruan, Chung Cheng Huang, Yow Jon Lin, Guan Ru He, Hsing Cheng Chang, Ya Hui Chen

Research output: Contribution to journalArticle

20 Citations (Scopus)

Abstract

p-Type conduction in Cu2ZnSnS4 (CZTS) thin films was realized by the sol-gel method. Measurements of electrical properties with the changes in the Cu/Zn ratio were carried out to determine defect behaviors. Combining with Hall, Raman, scanning electron microscopy, X-ray photoelectron spectroscopy and X-ray diffraction results, a direct link between the Cu Zn antisite, conduction type and hole concentration of CZTS films was established. Types of conduction and carrier density in CZTS films were found to be dependent on the Cu/Zn ratio. The formation of p-type conductivity in CZTS films might be due to the increased CuZn density.

Original languageEnglish
Pages (from-to)525-529
Number of pages5
JournalThin Solid Films
Volume550
DOIs
Publication statusPublished - 2014 Jan 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

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    Ruan, C. H., Huang, C. C., Lin, Y. J., He, G. R., Chang, H. C., & Chen, Y. H. (2014). Electrical properties of CuxZnySnS4 films with different Cu/Zn ratios. Thin Solid Films, 550, 525-529. https://doi.org/10.1016/j.tsf.2013.10.134