Electrical conduction mechanisms of Au/NiO/heavily doped p-type Si memory devices

Ting Hong Su, Yow Jon Lin

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

The fabrication of memory devices based on the Au/NiO/heavily doped p-type Si (p+-Si) structures and their current-voltage characteristics were reported. The Au/NiO/p+-Si devices show hysteresis behavior. The fitting data of the temperature-dependent off-state current-voltage curves demonstrated that the carrier transport mechanism of the Au/NiO/p+-Si device was attributed to the space change limited conduction. However, the difference between the temperature-dependent on-state currents in the forward-bias and reverse-bias regions was found. The different electrical conduction mechanisms (hopping conduction and Ohmic conduction with metal-like behaviors) were discussed. This phenomenon is related to the different interfacial characteristics between Au/NiO and NiO/p+-Si.

Original languageEnglish
Article number153504
JournalApplied Physics Letters
Volume104
Issue number15
DOIs
Publication statusPublished - 2014 Jan 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Electrical conduction mechanisms of Au/NiO/heavily doped p-type Si memory devices'. Together they form a unique fingerprint.

  • Cite this