Abstract
The fabrication of memory devices based on the Au/NiO/heavily doped p-type Si (p+-Si) structures and their current-voltage characteristics were reported. The Au/NiO/p+-Si devices show hysteresis behavior. The fitting data of the temperature-dependent off-state current-voltage curves demonstrated that the carrier transport mechanism of the Au/NiO/p+-Si device was attributed to the space change limited conduction. However, the difference between the temperature-dependent on-state currents in the forward-bias and reverse-bias regions was found. The different electrical conduction mechanisms (hopping conduction and Ohmic conduction with metal-like behaviors) were discussed. This phenomenon is related to the different interfacial characteristics between Au/NiO and NiO/p+-Si.
| Original language | English |
|---|---|
| Article number | 153504 |
| Journal | Applied Physics Letters |
| Volume | 104 |
| Issue number | 15 |
| DOIs | |
| Publication status | Published - 2014 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
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Electrical conduction mechanisms of Au/NiO/heavily doped p-type Si memory devices. / Su, Ting Hong; Lin, Yow Jon.
In: Applied Physics Letters, Vol. 104, No. 15, 153504, 01.01.2014.Research output: Contribution to journal › Article
TY - JOUR
T1 - Electrical conduction mechanisms of Au/NiO/heavily doped p-type Si memory devices
AU - Su, Ting Hong
AU - Lin, Yow Jon
PY - 2014/1/1
Y1 - 2014/1/1
N2 - The fabrication of memory devices based on the Au/NiO/heavily doped p-type Si (p+-Si) structures and their current-voltage characteristics were reported. The Au/NiO/p+-Si devices show hysteresis behavior. The fitting data of the temperature-dependent off-state current-voltage curves demonstrated that the carrier transport mechanism of the Au/NiO/p+-Si device was attributed to the space change limited conduction. However, the difference between the temperature-dependent on-state currents in the forward-bias and reverse-bias regions was found. The different electrical conduction mechanisms (hopping conduction and Ohmic conduction with metal-like behaviors) were discussed. This phenomenon is related to the different interfacial characteristics between Au/NiO and NiO/p+-Si.
AB - The fabrication of memory devices based on the Au/NiO/heavily doped p-type Si (p+-Si) structures and their current-voltage characteristics were reported. The Au/NiO/p+-Si devices show hysteresis behavior. The fitting data of the temperature-dependent off-state current-voltage curves demonstrated that the carrier transport mechanism of the Au/NiO/p+-Si device was attributed to the space change limited conduction. However, the difference between the temperature-dependent on-state currents in the forward-bias and reverse-bias regions was found. The different electrical conduction mechanisms (hopping conduction and Ohmic conduction with metal-like behaviors) were discussed. This phenomenon is related to the different interfacial characteristics between Au/NiO and NiO/p+-Si.
UR - http://www.scopus.com/inward/record.url?scp=84899628903&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84899628903&partnerID=8YFLogxK
U2 - 10.1063/1.4871693
DO - 10.1063/1.4871693
M3 - Article
AN - SCOPUS:84899628903
VL - 104
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 15
M1 - 153504
ER -