Electrical conduction mechanisms of Au/NiO/heavily doped p-type Si memory devices

Ting Hong Su, Yow Jon Lin

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The fabrication of memory devices based on the Au/NiO/heavily doped p-type Si (p+-Si) structures and their current-voltage characteristics were reported. The Au/NiO/p+-Si devices show hysteresis behavior. The fitting data of the temperature-dependent off-state current-voltage curves demonstrated that the carrier transport mechanism of the Au/NiO/p+-Si device was attributed to the space change limited conduction. However, the difference between the temperature-dependent on-state currents in the forward-bias and reverse-bias regions was found. The different electrical conduction mechanisms (hopping conduction and Ohmic conduction with metal-like behaviors) were discussed. This phenomenon is related to the different interfacial characteristics between Au/NiO and NiO/p+-Si.

Original languageEnglish
Article number153504
JournalApplied Physics Letters
Volume104
Issue number15
DOIs
Publication statusPublished - 2014 Jan 1

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conduction
electric potential
hysteresis
fabrication
temperature
curves
metals

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

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abstract = "The fabrication of memory devices based on the Au/NiO/heavily doped p-type Si (p+-Si) structures and their current-voltage characteristics were reported. The Au/NiO/p+-Si devices show hysteresis behavior. The fitting data of the temperature-dependent off-state current-voltage curves demonstrated that the carrier transport mechanism of the Au/NiO/p+-Si device was attributed to the space change limited conduction. However, the difference between the temperature-dependent on-state currents in the forward-bias and reverse-bias regions was found. The different electrical conduction mechanisms (hopping conduction and Ohmic conduction with metal-like behaviors) were discussed. This phenomenon is related to the different interfacial characteristics between Au/NiO and NiO/p+-Si.",
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Electrical conduction mechanisms of Au/NiO/heavily doped p-type Si memory devices. / Su, Ting Hong; Lin, Yow Jon.

In: Applied Physics Letters, Vol. 104, No. 15, 153504, 01.01.2014.

Research output: Contribution to journalArticle

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T1 - Electrical conduction mechanisms of Au/NiO/heavily doped p-type Si memory devices

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AB - The fabrication of memory devices based on the Au/NiO/heavily doped p-type Si (p+-Si) structures and their current-voltage characteristics were reported. The Au/NiO/p+-Si devices show hysteresis behavior. The fitting data of the temperature-dependent off-state current-voltage curves demonstrated that the carrier transport mechanism of the Au/NiO/p+-Si device was attributed to the space change limited conduction. However, the difference between the temperature-dependent on-state currents in the forward-bias and reverse-bias regions was found. The different electrical conduction mechanisms (hopping conduction and Ohmic conduction with metal-like behaviors) were discussed. This phenomenon is related to the different interfacial characteristics between Au/NiO and NiO/p+-Si.

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