Electrical conduction mechanisms in the temperature-dependent current-voltage characteristics of poly(3-hexylthiophene)/n-type Si devices

Hong Zhi Lin, Yow-Jon Lin

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The electrical conduction mechanisms in the temperature-dependent current-voltage characteristics of poly(3-hexylthiophene) (P3HT)/n-type Si devices were investigated. Carrier transport in the low forward-voltage region at room temperature is dominated by thermionic emission (TE). However, at high voltages the current is limited by series resistance and space charge limited current (SCLC) mechanisms. It is shown that the ideality factor increases as temperature decreases, because of a TE-to-SCLC transition. In order to obtain a greater understanding of the transition from TE to SCLC behavior, few-layer black phosphorus (BP) was incorporated into P3HT (i.e., P3HT:BP) and the P3HT:BP/n-type Si device was fabricated. It is suggested that the rectifying behavior is affected by the bulk effects of the P3HT layer. However, the incorporation of BP into P3HT leads to a significant increase in the hole mobility, suppressing the bulk effects of the P3HT layer.

Original languageEnglish
Pages (from-to)60-63
Number of pages4
JournalMicroelectronics Reliability
Volume65
DOIs
Publication statusPublished - 2016 Oct 1

Fingerprint

Current voltage characteristics
Thermionic emission
Phosphorus
Electric space charge
phosphorus
thermionic emission
conduction
electric potential
Electron transitions
space charge
Temperature
Hole mobility
temperature
Carrier transport
Electric potential
hole mobility
high voltages
poly(3-hexylthiophene)
room temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Safety, Risk, Reliability and Quality
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

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title = "Electrical conduction mechanisms in the temperature-dependent current-voltage characteristics of poly(3-hexylthiophene)/n-type Si devices",
abstract = "The electrical conduction mechanisms in the temperature-dependent current-voltage characteristics of poly(3-hexylthiophene) (P3HT)/n-type Si devices were investigated. Carrier transport in the low forward-voltage region at room temperature is dominated by thermionic emission (TE). However, at high voltages the current is limited by series resistance and space charge limited current (SCLC) mechanisms. It is shown that the ideality factor increases as temperature decreases, because of a TE-to-SCLC transition. In order to obtain a greater understanding of the transition from TE to SCLC behavior, few-layer black phosphorus (BP) was incorporated into P3HT (i.e., P3HT:BP) and the P3HT:BP/n-type Si device was fabricated. It is suggested that the rectifying behavior is affected by the bulk effects of the P3HT layer. However, the incorporation of BP into P3HT leads to a significant increase in the hole mobility, suppressing the bulk effects of the P3HT layer.",
author = "Lin, {Hong Zhi} and Yow-Jon Lin",
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T1 - Electrical conduction mechanisms in the temperature-dependent current-voltage characteristics of poly(3-hexylthiophene)/n-type Si devices

AU - Lin, Hong Zhi

AU - Lin, Yow-Jon

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N2 - The electrical conduction mechanisms in the temperature-dependent current-voltage characteristics of poly(3-hexylthiophene) (P3HT)/n-type Si devices were investigated. Carrier transport in the low forward-voltage region at room temperature is dominated by thermionic emission (TE). However, at high voltages the current is limited by series resistance and space charge limited current (SCLC) mechanisms. It is shown that the ideality factor increases as temperature decreases, because of a TE-to-SCLC transition. In order to obtain a greater understanding of the transition from TE to SCLC behavior, few-layer black phosphorus (BP) was incorporated into P3HT (i.e., P3HT:BP) and the P3HT:BP/n-type Si device was fabricated. It is suggested that the rectifying behavior is affected by the bulk effects of the P3HT layer. However, the incorporation of BP into P3HT leads to a significant increase in the hole mobility, suppressing the bulk effects of the P3HT layer.

AB - The electrical conduction mechanisms in the temperature-dependent current-voltage characteristics of poly(3-hexylthiophene) (P3HT)/n-type Si devices were investigated. Carrier transport in the low forward-voltage region at room temperature is dominated by thermionic emission (TE). However, at high voltages the current is limited by series resistance and space charge limited current (SCLC) mechanisms. It is shown that the ideality factor increases as temperature decreases, because of a TE-to-SCLC transition. In order to obtain a greater understanding of the transition from TE to SCLC behavior, few-layer black phosphorus (BP) was incorporated into P3HT (i.e., P3HT:BP) and the P3HT:BP/n-type Si device was fabricated. It is suggested that the rectifying behavior is affected by the bulk effects of the P3HT layer. However, the incorporation of BP into P3HT leads to a significant increase in the hole mobility, suppressing the bulk effects of the P3HT layer.

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