Electrical and surface properties of SiO2 films modified by ultraviolet irradiation and used as gate dielectrics for pentacene thin-film transistor applications

Yow Jon Lin, Cheng Chun Hung, Jing Shiuan Huang, Sheng Yu Lin, Hsing Cheng Chang

Research output: Contribution to journalArticle

Abstract

The effect of ultraviolet (UV) treatment on the electrical and surface properties of SiO2 is studied. UV treatment leads to the formation of the silicon peroxide in SiO2 near the surface, thus increasing the capacitance of SiO2. The effect of SiO2 gate dielectrics with UV treatment on carrier transport for a pentacene-based organic thin-film transistor (OTFT) is also studied. Experimental identification confirms that the shift of the threshold voltage towards positive gate-source voltages for OTFTs is due to an increase in the number of trap states in SiO2 near the pentacene/SiO2 interface. The existence of a peroxidation layer between pentacene and SiO2 serves to strengthen the pentacene-SiO2 interaction, reducing the field-effect carrier mobility and the leakage current in OTFTs.

Original languageEnglish
Pages (from-to)248-254
Number of pages7
JournalChinese Journal of Physics
Volume61
DOIs
Publication statusPublished - 2019 Oct

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surface treatment
surface properties
transistors
electrical properties
Taiwan
silicon dioxide
irradiation
defects
thin films
peroxides
carrier mobility
threshold voltage
leakage
capacitance
traps
shift
electric potential
silicon
interactions

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

@article{cf4bdeef5bd94784b1af0d85a992253e,
title = "Electrical and surface properties of SiO2 films modified by ultraviolet irradiation and used as gate dielectrics for pentacene thin-film transistor applications",
abstract = "The effect of ultraviolet (UV) treatment on the electrical and surface properties of SiO2 is studied. UV treatment leads to the formation of the silicon peroxide in SiO2 near the surface, thus increasing the capacitance of SiO2. The effect of SiO2 gate dielectrics with UV treatment on carrier transport for a pentacene-based organic thin-film transistor (OTFT) is also studied. Experimental identification confirms that the shift of the threshold voltage towards positive gate-source voltages for OTFTs is due to an increase in the number of trap states in SiO2 near the pentacene/SiO2 interface. The existence of a peroxidation layer between pentacene and SiO2 serves to strengthen the pentacene-SiO2 interaction, reducing the field-effect carrier mobility and the leakage current in OTFTs.",
author = "Lin, {Yow Jon} and Hung, {Cheng Chun} and Huang, {Jing Shiuan} and Lin, {Sheng Yu} and Chang, {Hsing Cheng}",
year = "2019",
month = "10",
doi = "10.1016/j.cjph.2019.08.013",
language = "English",
volume = "61",
pages = "248--254",
journal = "Chinese Journal of Physics",
issn = "0577-9073",
publisher = "Physical Society of the Republic of China",

}

Electrical and surface properties of SiO2 films modified by ultraviolet irradiation and used as gate dielectrics for pentacene thin-film transistor applications. / Lin, Yow Jon; Hung, Cheng Chun; Huang, Jing Shiuan; Lin, Sheng Yu; Chang, Hsing Cheng.

In: Chinese Journal of Physics, Vol. 61, 10.2019, p. 248-254.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Electrical and surface properties of SiO2 films modified by ultraviolet irradiation and used as gate dielectrics for pentacene thin-film transistor applications

AU - Lin, Yow Jon

AU - Hung, Cheng Chun

AU - Huang, Jing Shiuan

AU - Lin, Sheng Yu

AU - Chang, Hsing Cheng

PY - 2019/10

Y1 - 2019/10

N2 - The effect of ultraviolet (UV) treatment on the electrical and surface properties of SiO2 is studied. UV treatment leads to the formation of the silicon peroxide in SiO2 near the surface, thus increasing the capacitance of SiO2. The effect of SiO2 gate dielectrics with UV treatment on carrier transport for a pentacene-based organic thin-film transistor (OTFT) is also studied. Experimental identification confirms that the shift of the threshold voltage towards positive gate-source voltages for OTFTs is due to an increase in the number of trap states in SiO2 near the pentacene/SiO2 interface. The existence of a peroxidation layer between pentacene and SiO2 serves to strengthen the pentacene-SiO2 interaction, reducing the field-effect carrier mobility and the leakage current in OTFTs.

AB - The effect of ultraviolet (UV) treatment on the electrical and surface properties of SiO2 is studied. UV treatment leads to the formation of the silicon peroxide in SiO2 near the surface, thus increasing the capacitance of SiO2. The effect of SiO2 gate dielectrics with UV treatment on carrier transport for a pentacene-based organic thin-film transistor (OTFT) is also studied. Experimental identification confirms that the shift of the threshold voltage towards positive gate-source voltages for OTFTs is due to an increase in the number of trap states in SiO2 near the pentacene/SiO2 interface. The existence of a peroxidation layer between pentacene and SiO2 serves to strengthen the pentacene-SiO2 interaction, reducing the field-effect carrier mobility and the leakage current in OTFTs.

UR - http://www.scopus.com/inward/record.url?scp=85072605672&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85072605672&partnerID=8YFLogxK

U2 - 10.1016/j.cjph.2019.08.013

DO - 10.1016/j.cjph.2019.08.013

M3 - Article

AN - SCOPUS:85072605672

VL - 61

SP - 248

EP - 254

JO - Chinese Journal of Physics

JF - Chinese Journal of Physics

SN - 0577-9073

ER -