Abstract
Developing better contacts on Si-nanowire (SiNW) arrays is one of the main challenges for Si-based device technology. The present work reports the fabrication and detailed electrical properties of graphene/SiNWs/n-type Si Schottky diodes. The graphene/H2O2-treated SiNWs/n-type Si Schottky diode shows a better rectifying behavior in the dark than the graphene/SiNWs/n-type Si diode. Such an improvement indicates that a good passivation is formed at the interface. The graphene/H2O 2-treated SiNWs/n-type Si Schottky diode also shows a higher photocurrent under illumination than the graphene/SiNWs/n-type Si diode. Results revealed that SiNW surface passivation influences the photoconductivity by reducing the number of electron traps that serve to decrease the photocurrent time constant.
| Original language | English |
|---|---|
| Pages (from-to) | 581-587 |
| Number of pages | 7 |
| Journal | Applied Physics A: Materials Science and Processing |
| Volume | 116 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2014 Jan 1 |
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All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Materials Science(all)
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Electrical and optoelectronic properties of graphene Schottky contact on Si-nanowire arrays with and without H2O2 treatment. / Zeng, Jian Jhou; Lin, Yow-Jon.
In: Applied Physics A: Materials Science and Processing, Vol. 116, No. 2, 01.01.2014, p. 581-587.Research output: Contribution to journal › Article
TY - JOUR
T1 - Electrical and optoelectronic properties of graphene Schottky contact on Si-nanowire arrays with and without H2O2 treatment
AU - Zeng, Jian Jhou
AU - Lin, Yow-Jon
PY - 2014/1/1
Y1 - 2014/1/1
N2 - Developing better contacts on Si-nanowire (SiNW) arrays is one of the main challenges for Si-based device technology. The present work reports the fabrication and detailed electrical properties of graphene/SiNWs/n-type Si Schottky diodes. The graphene/H2O2-treated SiNWs/n-type Si Schottky diode shows a better rectifying behavior in the dark than the graphene/SiNWs/n-type Si diode. Such an improvement indicates that a good passivation is formed at the interface. The graphene/H2O 2-treated SiNWs/n-type Si Schottky diode also shows a higher photocurrent under illumination than the graphene/SiNWs/n-type Si diode. Results revealed that SiNW surface passivation influences the photoconductivity by reducing the number of electron traps that serve to decrease the photocurrent time constant.
AB - Developing better contacts on Si-nanowire (SiNW) arrays is one of the main challenges for Si-based device technology. The present work reports the fabrication and detailed electrical properties of graphene/SiNWs/n-type Si Schottky diodes. The graphene/H2O2-treated SiNWs/n-type Si Schottky diode shows a better rectifying behavior in the dark than the graphene/SiNWs/n-type Si diode. Such an improvement indicates that a good passivation is formed at the interface. The graphene/H2O 2-treated SiNWs/n-type Si Schottky diode also shows a higher photocurrent under illumination than the graphene/SiNWs/n-type Si diode. Results revealed that SiNW surface passivation influences the photoconductivity by reducing the number of electron traps that serve to decrease the photocurrent time constant.
UR - http://www.scopus.com/inward/record.url?scp=84904464832&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84904464832&partnerID=8YFLogxK
U2 - 10.1007/s00339-013-8157-6
DO - 10.1007/s00339-013-8157-6
M3 - Article
AN - SCOPUS:84904464832
VL - 116
SP - 581
EP - 587
JO - Applied Physics
JF - Applied Physics
SN - 0340-3793
IS - 2
ER -