Electrical and optoelectronic properties of graphene Schottky contact on Si-nanowire arrays with and without H2O2 treatment

Jian Jhou Zeng; Yow-Jon Lin

doi:10.1007/s00339-013-8157-6

Electrical and optoelectronic properties of graphene Schottky contact on Si-nanowire arrays with and without H₂O₂ treatment

Jian Jhou Zeng, Yow-Jon Lin

Graduate Institute of Photonics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Developing better contacts on Si-nanowire (SiNW) arrays is one of the main challenges for Si-based device technology. The present work reports the fabrication and detailed electrical properties of graphene/SiNWs/n-type Si Schottky diodes. The graphene/H₂O₂-treated SiNWs/n-type Si Schottky diode shows a better rectifying behavior in the dark than the graphene/SiNWs/n-type Si diode. Such an improvement indicates that a good passivation is formed at the interface. The graphene/H₂O ₂-treated SiNWs/n-type Si Schottky diode also shows a higher photocurrent under illumination than the graphene/SiNWs/n-type Si diode. Results revealed that SiNW surface passivation influences the photoconductivity by reducing the number of electron traps that serve to decrease the photocurrent time constant.

Original language	English
Pages (from-to)	581-587
Number of pages	7
Journal	Applied Physics A: Materials Science and Processing
Volume	116
Issue number	2
DOIs	https://doi.org/10.1007/s00339-013-8157-6
Publication status	Published - 2014 Jan 1

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)

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abstract = "Developing better contacts on Si-nanowire (SiNW) arrays is one of the main challenges for Si-based device technology. The present work reports the fabrication and detailed electrical properties of graphene/SiNWs/n-type Si Schottky diodes. The graphene/H2O2-treated SiNWs/n-type Si Schottky diode shows a better rectifying behavior in the dark than the graphene/SiNWs/n-type Si diode. Such an improvement indicates that a good passivation is formed at the interface. The graphene/H2O 2-treated SiNWs/n-type Si Schottky diode also shows a higher photocurrent under illumination than the graphene/SiNWs/n-type Si diode. Results revealed that SiNW surface passivation influences the photoconductivity by reducing the number of electron traps that serve to decrease the photocurrent time constant.",

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