Electrical and optoelectronic properties of graphene Schottky contact on Si-nanowire arrays with and without H2O2 treatment

Jian Jhou Zeng, Yow-Jon Lin

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Developing better contacts on Si-nanowire (SiNW) arrays is one of the main challenges for Si-based device technology. The present work reports the fabrication and detailed electrical properties of graphene/SiNWs/n-type Si Schottky diodes. The graphene/H2O2-treated SiNWs/n-type Si Schottky diode shows a better rectifying behavior in the dark than the graphene/SiNWs/n-type Si diode. Such an improvement indicates that a good passivation is formed at the interface. The graphene/H2O 2-treated SiNWs/n-type Si Schottky diode also shows a higher photocurrent under illumination than the graphene/SiNWs/n-type Si diode. Results revealed that SiNW surface passivation influences the photoconductivity by reducing the number of electron traps that serve to decrease the photocurrent time constant.

Original languageEnglish
Pages (from-to)581-587
Number of pages7
JournalApplied Physics A: Materials Science and Processing
Volume116
Issue number2
DOIs
Publication statusPublished - 2014 Jan 1

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Optoelectronic devices
Graphene
Nanowires
Diodes
Photocurrents
Passivation
Electron traps
Photoconductivity
Electric properties
Lighting
Fabrication

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)

Cite this

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abstract = "Developing better contacts on Si-nanowire (SiNW) arrays is one of the main challenges for Si-based device technology. The present work reports the fabrication and detailed electrical properties of graphene/SiNWs/n-type Si Schottky diodes. The graphene/H2O2-treated SiNWs/n-type Si Schottky diode shows a better rectifying behavior in the dark than the graphene/SiNWs/n-type Si diode. Such an improvement indicates that a good passivation is formed at the interface. The graphene/H2O 2-treated SiNWs/n-type Si Schottky diode also shows a higher photocurrent under illumination than the graphene/SiNWs/n-type Si diode. Results revealed that SiNW surface passivation influences the photoconductivity by reducing the number of electron traps that serve to decrease the photocurrent time constant.",
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