Developing better contacts on Si-nanowire (SiNW) arrays is one of the main challenges for Si-based device technology. The present work reports the fabrication and detailed electrical properties of graphene/SiNWs/n-type Si Schottky diodes. The graphene/H2O2-treated SiNWs/n-type Si Schottky diode shows a better rectifying behavior in the dark than the graphene/SiNWs/n-type Si diode. Such an improvement indicates that a good passivation is formed at the interface. The graphene/H2O 2-treated SiNWs/n-type Si Schottky diode also shows a higher photocurrent under illumination than the graphene/SiNWs/n-type Si diode. Results revealed that SiNW surface passivation influences the photoconductivity by reducing the number of electron traps that serve to decrease the photocurrent time constant.
|Number of pages||7|
|Journal||Applied Physics A: Materials Science and Processing|
|Publication status||Published - 2014 Jan 1|
All Science Journal Classification (ASJC) codes
- Materials Science(all)