Electrical and optoelectronic properties of [6,6]-phenyl C61-butyric acid methyl ester: Black phosphorus/p-type Si devices

The [6,6]-phenyl C61-butyric acid methyl ester (PCBM):black phosphorus (BP)/p-type Si devices are fabricated and the electrical and optoelectronic properties of PCBM:BP devices are determined. Correlation effects are evaluated using the well-known expressions for the thermionic emission. Rectification behavior is affected by the bulk effects of the PCBM layer. The dark forward-bias current is proportional to BP content. The incorporation of BP into PCBM leads to an increase in the absorptivity of the PCBM layer, the occurrence of the hybrid excitons at the PCBM/BP interface, efficient hole transport and modification of the interface of PCBM/p-type Si, which results in an improvement in the electrical and optoelectronic performance of PCBM/p-type Si devices.