Electrical and optoelectronic properties of [6,6]-phenyl C61-butyric acid methyl ester: Black phosphorus/p-type Si devices

Yow-Jon Lin, Hong Zhi Lin, Zhi Hui Tang, Hsing Cheng Chang

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The [6,6]-phenyl C61-butyric acid methyl ester (PCBM):black phosphorus (BP)/p-type Si devices are fabricated and the electrical and optoelectronic properties of PCBM:BP devices are determined. Correlation effects are evaluated using the well-known expressions for the thermionic emission. Rectification behavior is affected by the bulk effects of the PCBM layer. The dark forward-bias current is proportional to BP content. The incorporation of BP into PCBM leads to an increase in the absorptivity of the PCBM layer, the occurrence of the hybrid excitons at the PCBM/BP interface, efficient hole transport and modification of the interface of PCBM/p-type Si, which results in an improvement in the electrical and optoelectronic performance of PCBM/p-type Si devices.

Original languageEnglish
Pages (from-to)5-9
Number of pages5
JournalMicroelectronic Engineering
Volume166
DOIs
Publication statusPublished - 2016 Dec 1

Fingerprint

Butyric acid
Butyric Acid
butyric acid
Optoelectronic devices
Phosphorus
phosphorus
esters
Esters
electrical properties
Thermionic emission
Bias currents
(6,6)-phenyl C61-butyric acid methyl ester
thermionic emission
rectification
Excitons
absorptivity
excitons
occurrences

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

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abstract = "The [6,6]-phenyl C61-butyric acid methyl ester (PCBM):black phosphorus (BP)/p-type Si devices are fabricated and the electrical and optoelectronic properties of PCBM:BP devices are determined. Correlation effects are evaluated using the well-known expressions for the thermionic emission. Rectification behavior is affected by the bulk effects of the PCBM layer. The dark forward-bias current is proportional to BP content. The incorporation of BP into PCBM leads to an increase in the absorptivity of the PCBM layer, the occurrence of the hybrid excitons at the PCBM/BP interface, efficient hole transport and modification of the interface of PCBM/p-type Si, which results in an improvement in the electrical and optoelectronic performance of PCBM/p-type Si devices.",
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Electrical and optoelectronic properties of [6,6]-phenyl C61-butyric acid methyl ester : Black phosphorus/p-type Si devices. / Lin, Yow-Jon; Lin, Hong Zhi; Tang, Zhi Hui; Chang, Hsing Cheng.

In: Microelectronic Engineering, Vol. 166, 01.12.2016, p. 5-9.

Research output: Contribution to journalArticle

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AU - Lin, Hong Zhi

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AU - Chang, Hsing Cheng

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AB - The [6,6]-phenyl C61-butyric acid methyl ester (PCBM):black phosphorus (BP)/p-type Si devices are fabricated and the electrical and optoelectronic properties of PCBM:BP devices are determined. Correlation effects are evaluated using the well-known expressions for the thermionic emission. Rectification behavior is affected by the bulk effects of the PCBM layer. The dark forward-bias current is proportional to BP content. The incorporation of BP into PCBM leads to an increase in the absorptivity of the PCBM layer, the occurrence of the hybrid excitons at the PCBM/BP interface, efficient hole transport and modification of the interface of PCBM/p-type Si, which results in an improvement in the electrical and optoelectronic performance of PCBM/p-type Si devices.

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