Abstract
The [6,6]-phenyl C61-butyric acid methyl ester (PCBM):black phosphorus (BP)/p-type Si devices are fabricated and the electrical and optoelectronic properties of PCBM:BP devices are determined. Correlation effects are evaluated using the well-known expressions for the thermionic emission. Rectification behavior is affected by the bulk effects of the PCBM layer. The dark forward-bias current is proportional to BP content. The incorporation of BP into PCBM leads to an increase in the absorptivity of the PCBM layer, the occurrence of the hybrid excitons at the PCBM/BP interface, efficient hole transport and modification of the interface of PCBM/p-type Si, which results in an improvement in the electrical and optoelectronic performance of PCBM/p-type Si devices.
| Original language | English |
|---|---|
| Pages (from-to) | 5-9 |
| Number of pages | 5 |
| Journal | Microelectronic Engineering |
| Volume | 166 |
| DOIs | |
| Publication status | Published - 2016 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
Cite this
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Electrical and optoelectronic properties of [6,6]-phenyl C61-butyric acid methyl ester : Black phosphorus/p-type Si devices. / Lin, Yow-Jon; Lin, Hong Zhi; Tang, Zhi Hui; Chang, Hsing Cheng.
In: Microelectronic Engineering, Vol. 166, 01.12.2016, p. 5-9.Research output: Contribution to journal › Article
TY - JOUR
T1 - Electrical and optoelectronic properties of [6,6]-phenyl C61-butyric acid methyl ester
T2 - Black phosphorus/p-type Si devices
AU - Lin, Yow-Jon
AU - Lin, Hong Zhi
AU - Tang, Zhi Hui
AU - Chang, Hsing Cheng
PY - 2016/12/1
Y1 - 2016/12/1
N2 - The [6,6]-phenyl C61-butyric acid methyl ester (PCBM):black phosphorus (BP)/p-type Si devices are fabricated and the electrical and optoelectronic properties of PCBM:BP devices are determined. Correlation effects are evaluated using the well-known expressions for the thermionic emission. Rectification behavior is affected by the bulk effects of the PCBM layer. The dark forward-bias current is proportional to BP content. The incorporation of BP into PCBM leads to an increase in the absorptivity of the PCBM layer, the occurrence of the hybrid excitons at the PCBM/BP interface, efficient hole transport and modification of the interface of PCBM/p-type Si, which results in an improvement in the electrical and optoelectronic performance of PCBM/p-type Si devices.
AB - The [6,6]-phenyl C61-butyric acid methyl ester (PCBM):black phosphorus (BP)/p-type Si devices are fabricated and the electrical and optoelectronic properties of PCBM:BP devices are determined. Correlation effects are evaluated using the well-known expressions for the thermionic emission. Rectification behavior is affected by the bulk effects of the PCBM layer. The dark forward-bias current is proportional to BP content. The incorporation of BP into PCBM leads to an increase in the absorptivity of the PCBM layer, the occurrence of the hybrid excitons at the PCBM/BP interface, efficient hole transport and modification of the interface of PCBM/p-type Si, which results in an improvement in the electrical and optoelectronic performance of PCBM/p-type Si devices.
UR - http://www.scopus.com/inward/record.url?scp=84986571189&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84986571189&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2016.09.004
DO - 10.1016/j.mee.2016.09.004
M3 - Article
AN - SCOPUS:84986571189
VL - 166
SP - 5
EP - 9
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
ER -