Electrical and optoelectronic properties for devices that use MoS2 deposited on Si substrates with and without (NH4)2Sx treatment by chemical vapor deposition

Ting Hong Su, Chang Lin Wu, Hsing Cheng Chang, Yow-Jon Lin

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2 Citations (Scopus)

Abstract

To fabricate a MoS2/Si device, layers of MoS2 are directly deposited on an n-type Si (n-Si) substrate with/without (NH4)2Sx treatment by chemical vapor deposition (CVD). X-ray photoelectron spectroscopy, Hall-effect measurement system, field emission scanning electron microscopy and Raman spectra are employed to characterize the morphology, electrical properties and structure of the MoS2 samples. The MoS2 thin film that is directly deposited on the (NH4)2Sx-treated n-Si substrate exhibits n-type behavior and the MoS2/(NH4)2Sx-treated n-Si device exhibits stable rectification behavior. It is found that the thermionic emission model is the dominant process in this fabricated MoS2/(NH4)2Sx-treated n-Si device. The MoS2/(NH4)2Sx-treated n-Si device exhibits high sensitivity to solar irradiation. Because of the value of ideality factor of 1.6 for the MoS2/(NH4)2Sx-treated n-Si devices, the enhanced sensitivity is due to the existence of the sulfurated layer at the MoS2/n-Si interface. On the other hand, there were no MoS2 thin films on the n-Si substrate without (NH4)2Sx treatment. This observation shows the importance of S–Si bonds on the (NH4)2Sx-treated n-Si surface for the CVD growth process. These results demonstrate direct and simple growth of MoS2 on Si, which can be of high importance in future electronic and optoelectronic applications.

Original languageEnglish
Pages (from-to)351-356
Number of pages6
JournalJournal of Materials Science: Materials in Electronics
Volume29
Issue number1
DOIs
Publication statusPublished - 2018 Jan 1

Fingerprint

Optoelectronic devices
Chemical vapor deposition
electrical properties
vapor deposition
Substrates
Thermionic emission
Thin films
Hall effect
Field emission
Raman scattering
Electric properties
X ray photoelectron spectroscopy
Irradiation
sensitivity
thermionic emission
rectification
thin films
Scanning electron microscopy
field emission
photoelectron spectroscopy

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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title = "Electrical and optoelectronic properties for devices that use MoS2 deposited on Si substrates with and without (NH4)2Sx treatment by chemical vapor deposition",
abstract = "To fabricate a MoS2/Si device, layers of MoS2 are directly deposited on an n-type Si (n-Si) substrate with/without (NH4)2Sx treatment by chemical vapor deposition (CVD). X-ray photoelectron spectroscopy, Hall-effect measurement system, field emission scanning electron microscopy and Raman spectra are employed to characterize the morphology, electrical properties and structure of the MoS2 samples. The MoS2 thin film that is directly deposited on the (NH4)2Sx-treated n-Si substrate exhibits n-type behavior and the MoS2/(NH4)2Sx-treated n-Si device exhibits stable rectification behavior. It is found that the thermionic emission model is the dominant process in this fabricated MoS2/(NH4)2Sx-treated n-Si device. The MoS2/(NH4)2Sx-treated n-Si device exhibits high sensitivity to solar irradiation. Because of the value of ideality factor of 1.6 for the MoS2/(NH4)2Sx-treated n-Si devices, the enhanced sensitivity is due to the existence of the sulfurated layer at the MoS2/n-Si interface. On the other hand, there were no MoS2 thin films on the n-Si substrate without (NH4)2Sx treatment. This observation shows the importance of S–Si bonds on the (NH4)2Sx-treated n-Si surface for the CVD growth process. These results demonstrate direct and simple growth of MoS2 on Si, which can be of high importance in future electronic and optoelectronic applications.",
author = "Su, {Ting Hong} and Wu, {Chang Lin} and Chang, {Hsing Cheng} and Yow-Jon Lin",
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TY - JOUR

T1 - Electrical and optoelectronic properties for devices that use MoS2 deposited on Si substrates with and without (NH4)2Sx treatment by chemical vapor deposition

AU - Su, Ting Hong

AU - Wu, Chang Lin

AU - Chang, Hsing Cheng

AU - Lin, Yow-Jon

PY - 2018/1/1

Y1 - 2018/1/1

N2 - To fabricate a MoS2/Si device, layers of MoS2 are directly deposited on an n-type Si (n-Si) substrate with/without (NH4)2Sx treatment by chemical vapor deposition (CVD). X-ray photoelectron spectroscopy, Hall-effect measurement system, field emission scanning electron microscopy and Raman spectra are employed to characterize the morphology, electrical properties and structure of the MoS2 samples. The MoS2 thin film that is directly deposited on the (NH4)2Sx-treated n-Si substrate exhibits n-type behavior and the MoS2/(NH4)2Sx-treated n-Si device exhibits stable rectification behavior. It is found that the thermionic emission model is the dominant process in this fabricated MoS2/(NH4)2Sx-treated n-Si device. The MoS2/(NH4)2Sx-treated n-Si device exhibits high sensitivity to solar irradiation. Because of the value of ideality factor of 1.6 for the MoS2/(NH4)2Sx-treated n-Si devices, the enhanced sensitivity is due to the existence of the sulfurated layer at the MoS2/n-Si interface. On the other hand, there were no MoS2 thin films on the n-Si substrate without (NH4)2Sx treatment. This observation shows the importance of S–Si bonds on the (NH4)2Sx-treated n-Si surface for the CVD growth process. These results demonstrate direct and simple growth of MoS2 on Si, which can be of high importance in future electronic and optoelectronic applications.

AB - To fabricate a MoS2/Si device, layers of MoS2 are directly deposited on an n-type Si (n-Si) substrate with/without (NH4)2Sx treatment by chemical vapor deposition (CVD). X-ray photoelectron spectroscopy, Hall-effect measurement system, field emission scanning electron microscopy and Raman spectra are employed to characterize the morphology, electrical properties and structure of the MoS2 samples. The MoS2 thin film that is directly deposited on the (NH4)2Sx-treated n-Si substrate exhibits n-type behavior and the MoS2/(NH4)2Sx-treated n-Si device exhibits stable rectification behavior. It is found that the thermionic emission model is the dominant process in this fabricated MoS2/(NH4)2Sx-treated n-Si device. The MoS2/(NH4)2Sx-treated n-Si device exhibits high sensitivity to solar irradiation. Because of the value of ideality factor of 1.6 for the MoS2/(NH4)2Sx-treated n-Si devices, the enhanced sensitivity is due to the existence of the sulfurated layer at the MoS2/n-Si interface. On the other hand, there were no MoS2 thin films on the n-Si substrate without (NH4)2Sx treatment. This observation shows the importance of S–Si bonds on the (NH4)2Sx-treated n-Si surface for the CVD growth process. These results demonstrate direct and simple growth of MoS2 on Si, which can be of high importance in future electronic and optoelectronic applications.

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