Electrical and optical properties of Co-doped and undoped MoS2

Tsung Shine Ko, Cheng Ching Huang, Der Yuh Lin, Yan Jia Ruan, Ying Sheng Huang

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Co-doped and undoped layered MoS2 crystals were grown by the chemical vapor transport method using iodine as the transport agent. Both reflectance and piezoreflectance measurements reveal two exciton transitions of the direct band edge around 1.86 and 2.06 eV for undoped MoS2 and 1.84 and 2.03 eV for Co-doped MoS2. Hall effect measurements show that the Co-doped MoS2 sample has a lower carrier concentration and mobility than the undoped sample. These differences between undoped and Co-doped MoS2 were attributed to the effect of cobalt atoms causing a small lattice distortion, lattice imperfections and/or impurity states that form trap states between the conduction band and valence band. Furthermore, photoconductivity (PC) and persistent PC results show that Co-doped MoS2 has a longer time constant and better responsivity than undoped MoS2. This work discusses the advantages of Co-doped MoS2 for photodetector applications.

Original languageEnglish
Article number04EP06
JournalJapanese Journal of Applied Physics
Volume55
Issue number4
DOIs
Publication statusPublished - 2016 Apr

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Photoconductivity
photoconductivity
Electric properties
Optical properties
electrical properties
optical properties
Carrier mobility
Hall effect
Electron transitions
Photodetectors
Valence bands
Conduction bands
Iodine
Excitons
crystal defects
time constant
iodine
Carrier concentration
photometers
Cobalt

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Ko, Tsung Shine ; Huang, Cheng Ching ; Lin, Der Yuh ; Ruan, Yan Jia ; Huang, Ying Sheng. / Electrical and optical properties of Co-doped and undoped MoS2. In: Japanese Journal of Applied Physics. 2016 ; Vol. 55, No. 4.
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Electrical and optical properties of Co-doped and undoped MoS2. / Ko, Tsung Shine; Huang, Cheng Ching; Lin, Der Yuh; Ruan, Yan Jia; Huang, Ying Sheng.

In: Japanese Journal of Applied Physics, Vol. 55, No. 4, 04EP06, 04.2016.

Research output: Contribution to journalArticle

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T1 - Electrical and optical properties of Co-doped and undoped MoS2

AU - Ko, Tsung Shine

AU - Huang, Cheng Ching

AU - Lin, Der Yuh

AU - Ruan, Yan Jia

AU - Huang, Ying Sheng

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