Efficient Carrier Confinement in Deep-Ultraviolet Light-Emitting Diodes with Composition-Graded Configuration

Jih Yuan Chang; Hui Tzu Chang; Ya Hsuan Shih; Fang Ming Chen; Man Fang Huang; Yen Kuang Kuo

doi:10.1109/TED.2017.2761404

Efficient Carrier Confinement in Deep-Ultraviolet Light-Emitting Diodes with Composition-Graded Configuration

Jih Yuan Chang, Hui Tzu Chang, Ya Hsuan Shih, Fang Ming Chen, Man Fang Huang, Yen Kuang Kuo

Research output: Contribution to journal › Article › peer-review

16 Citations (Scopus)

Abstract

Characteristics of deep-ultraviolet (DUV) light-emitting diodes (LEDs) are investigated. DUV LEDs possess severe electron current leakage due to insufficient carrier confinement of the active region. Simply increasing the Al composition of quantum barriers (QBs) or electron-blocking layer (EBL) to enlarge the relevant potential barrier height would arise unexpected detrimental effects, such as extra polarization effect or more obstruction for hole injection. In this paper, band-engineered composition-graded QBs and EBL are proposed to resolve this issue. Simulation results show that, with appropriate designs, the leakage current of DUV LEDs could be effectively diminished with just slight side effects.

Original language	English
Article number	8082105
Pages (from-to)	4980-4984
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	64
Issue number	12
DOIs	https://doi.org/10.1109/TED.2017.2761404
Publication status	Published - 2017 Dec

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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@article{b98841b6e4074fc6a10507f440ffd1a7,

title = "Efficient Carrier Confinement in Deep-Ultraviolet Light-Emitting Diodes with Composition-Graded Configuration",

abstract = "Characteristics of deep-ultraviolet (DUV) light-emitting diodes (LEDs) are investigated. DUV LEDs possess severe electron current leakage due to insufficient carrier confinement of the active region. Simply increasing the Al composition of quantum barriers (QBs) or electron-blocking layer (EBL) to enlarge the relevant potential barrier height would arise unexpected detrimental effects, such as extra polarization effect or more obstruction for hole injection. In this paper, band-engineered composition-graded QBs and EBL are proposed to resolve this issue. Simulation results show that, with appropriate designs, the leakage current of DUV LEDs could be effectively diminished with just slight side effects.",

author = "Chang, {Jih Yuan} and Chang, {Hui Tzu} and Shih, {Ya Hsuan} and Chen, {Fang Ming} and Huang, {Man Fang} and Kuo, {Yen Kuang}",

year = "2017",

month = dec,

doi = "10.1109/TED.2017.2761404",

language = "English",

volume = "64",

pages = "4980--4984",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "12",

}

Efficient Carrier Confinement in Deep-Ultraviolet Light-Emitting Diodes with Composition-Graded Configuration. / Chang, Jih Yuan; Chang, Hui Tzu; Shih, Ya Hsuan; Chen, Fang Ming; Huang, Man Fang ; Kuo, Yen Kuang.

In: IEEE Transactions on Electron Devices, Vol. 64, No. 12, 8082105, 12.2017, p. 4980-4984.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Efficient Carrier Confinement in Deep-Ultraviolet Light-Emitting Diodes with Composition-Graded Configuration

AU - Chang, Jih Yuan

AU - Chang, Hui Tzu

AU - Shih, Ya Hsuan

AU - Chen, Fang Ming

AU - Huang, Man Fang

AU - Kuo, Yen Kuang

PY - 2017/12

Y1 - 2017/12

N2 - Characteristics of deep-ultraviolet (DUV) light-emitting diodes (LEDs) are investigated. DUV LEDs possess severe electron current leakage due to insufficient carrier confinement of the active region. Simply increasing the Al composition of quantum barriers (QBs) or electron-blocking layer (EBL) to enlarge the relevant potential barrier height would arise unexpected detrimental effects, such as extra polarization effect or more obstruction for hole injection. In this paper, band-engineered composition-graded QBs and EBL are proposed to resolve this issue. Simulation results show that, with appropriate designs, the leakage current of DUV LEDs could be effectively diminished with just slight side effects.

AB - Characteristics of deep-ultraviolet (DUV) light-emitting diodes (LEDs) are investigated. DUV LEDs possess severe electron current leakage due to insufficient carrier confinement of the active region. Simply increasing the Al composition of quantum barriers (QBs) or electron-blocking layer (EBL) to enlarge the relevant potential barrier height would arise unexpected detrimental effects, such as extra polarization effect or more obstruction for hole injection. In this paper, band-engineered composition-graded QBs and EBL are proposed to resolve this issue. Simulation results show that, with appropriate designs, the leakage current of DUV LEDs could be effectively diminished with just slight side effects.

UR - http://www.scopus.com/inward/record.url?scp=85032455939&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85032455939&partnerID=8YFLogxK

U2 - 10.1109/TED.2017.2761404

DO - 10.1109/TED.2017.2761404

M3 - Article

AN - SCOPUS:85032455939

VL - 64

SP - 4980

EP - 4984

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 12

M1 - 8082105

ER -