Efficient Carrier Confinement in Deep-Ultraviolet Light-Emitting Diodes with Composition-Graded Configuration

Jih Yuan Chang; Hui Tzu Chang; Ya Hsuan Shih; Fang Ming Chen; Man Fang Huang; Yen Kuang Kuo

doi:10.1109/TED.2017.2761404

Efficient Carrier Confinement in Deep-Ultraviolet Light-Emitting Diodes with Composition-Graded Configuration

Jih Yuan Chang, Hui Tzu Chang, Ya Hsuan Shih, Fang Ming Chen, Man Fang Huang, Yen Kuang Kuo

Research output: Contribution to journal › Article

13 Citations (Scopus)

Abstract

Characteristics of deep-ultraviolet (DUV) light-emitting diodes (LEDs) are investigated. DUV LEDs possess severe electron current leakage due to insufficient carrier confinement of the active region. Simply increasing the Al composition of quantum barriers (QBs) or electron-blocking layer (EBL) to enlarge the relevant potential barrier height would arise unexpected detrimental effects, such as extra polarization effect or more obstruction for hole injection. In this paper, band-engineered composition-graded QBs and EBL are proposed to resolve this issue. Simulation results show that, with appropriate designs, the leakage current of DUV LEDs could be effectively diminished with just slight side effects.

Original language	English
Article number	8082105
Pages (from-to)	4980-4984
Number of pages	5
Journal	IEEE Transactions on Electron Devices
Volume	64
Issue number	12
DOIs	https://doi.org/10.1109/TED.2017.2761404
Publication status	Published - 2017 Dec

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

Cite this

Chang, J. Y., Chang, H. T., Shih, Y. H., Chen, F. M., Huang, M. F., & Kuo, Y. K. (2017). Efficient Carrier Confinement in Deep-Ultraviolet Light-Emitting Diodes with Composition-Graded Configuration. IEEE Transactions on Electron Devices, 64(12), 4980-4984. [8082105]. https://doi.org/10.1109/TED.2017.2761404

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Access to Document

10.1109/TED.2017.2761404