Abstract
Characteristics of deep-ultraviolet (DUV) light-emitting diodes (LEDs) are investigated. DUV LEDs possess severe electron current leakage due to insufficient carrier confinement of the active region. Simply increasing the Al composition of quantum barriers (QBs) or electron-blocking layer (EBL) to enlarge the relevant potential barrier height would arise unexpected detrimental effects, such as extra polarization effect or more obstruction for hole injection. In this paper, band-engineered composition-graded QBs and EBL are proposed to resolve this issue. Simulation results show that, with appropriate designs, the leakage current of DUV LEDs could be effectively diminished with just slight side effects.
| Original language | English |
|---|---|
| Article number | 8082105 |
| Pages (from-to) | 4980-4984 |
| Number of pages | 5 |
| Journal | IEEE Transactions on Electron Devices |
| Volume | 64 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2017 Dec |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
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Efficient Carrier Confinement in Deep-Ultraviolet Light-Emitting Diodes with Composition-Graded Configuration. / Chang, Jih Yuan; Chang, Hui Tzu; Shih, Ya Hsuan; Chen, Fang Ming; Huang, Man Fang; Kuo, Yen Kuang.
In: IEEE Transactions on Electron Devices, Vol. 64, No. 12, 8082105, 12.2017, p. 4980-4984.Research output: Contribution to journal › Article
TY - JOUR
T1 - Efficient Carrier Confinement in Deep-Ultraviolet Light-Emitting Diodes with Composition-Graded Configuration
AU - Chang, Jih Yuan
AU - Chang, Hui Tzu
AU - Shih, Ya Hsuan
AU - Chen, Fang Ming
AU - Huang, Man Fang
AU - Kuo, Yen Kuang
PY - 2017/12
Y1 - 2017/12
N2 - Characteristics of deep-ultraviolet (DUV) light-emitting diodes (LEDs) are investigated. DUV LEDs possess severe electron current leakage due to insufficient carrier confinement of the active region. Simply increasing the Al composition of quantum barriers (QBs) or electron-blocking layer (EBL) to enlarge the relevant potential barrier height would arise unexpected detrimental effects, such as extra polarization effect or more obstruction for hole injection. In this paper, band-engineered composition-graded QBs and EBL are proposed to resolve this issue. Simulation results show that, with appropriate designs, the leakage current of DUV LEDs could be effectively diminished with just slight side effects.
AB - Characteristics of deep-ultraviolet (DUV) light-emitting diodes (LEDs) are investigated. DUV LEDs possess severe electron current leakage due to insufficient carrier confinement of the active region. Simply increasing the Al composition of quantum barriers (QBs) or electron-blocking layer (EBL) to enlarge the relevant potential barrier height would arise unexpected detrimental effects, such as extra polarization effect or more obstruction for hole injection. In this paper, band-engineered composition-graded QBs and EBL are proposed to resolve this issue. Simulation results show that, with appropriate designs, the leakage current of DUV LEDs could be effectively diminished with just slight side effects.
UR - http://www.scopus.com/inward/record.url?scp=85032455939&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85032455939&partnerID=8YFLogxK
U2 - 10.1109/TED.2017.2761404
DO - 10.1109/TED.2017.2761404
M3 - Article
AN - SCOPUS:85032455939
VL - 64
SP - 4980
EP - 4984
JO - IEEE Transactions on Electron Devices
JF - IEEE Transactions on Electron Devices
SN - 0018-9383
IS - 12
M1 - 8082105
ER -