Efficiency enhancement of blue InGaN light-emitting diodes with shallow first well

Tsun Hsin Wang, Yen Kuang Kuo

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

Efficiency enhancement of blue InGaN/GaN light-emitting diodes (LEDs) with shallow first well is investigated. Energy band diagrams, carrier concentrations in quantum wells, spontaneous emission spectra, light-current-voltage performance curves, and internal quantum efficiency are studied. Simulation results show that the LED is markedly improved when regular first well is replaced by shallow first well due to reduced polarization field and thereby enhanced injection efficiency of carriers in quantum wells. The proposed structure is beneficial for the blue InGaN LED even at a high level of current injection.

Original languageEnglish
Article number6310011
Pages (from-to)2084-2086
Number of pages3
JournalIEEE Photonics Technology Letters
Volume24
Issue number22
DOIs
Publication statusPublished - 2012 Nov 26

Fingerprint

Light emitting diodes
light emitting diodes
Semiconductor quantum wells
augmentation
quantum wells
injection
Spontaneous emission
Quantum efficiency
Band structure
spontaneous emission
Carrier concentration
energy bands
quantum efficiency
emission spectra
diagrams
Polarization
Electric potential
electric potential
curves
polarization

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

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Efficiency enhancement of blue InGaN light-emitting diodes with shallow first well. / Wang, Tsun Hsin; Kuo, Yen Kuang.

In: IEEE Photonics Technology Letters, Vol. 24, No. 22, 6310011, 26.11.2012, p. 2084-2086.

Research output: Contribution to journalArticle

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