Efficiency enhancement of blue InGaN light-emitting diodes with shallow first well

Tsun Hsin Wang; Yen Kuang Kuo

doi:10.1109/LPT.2012.2220131

Efficiency enhancement of blue InGaN light-emitting diodes with shallow first well

Tsun Hsin Wang, Yen Kuang Kuo

Department of Physics

Research output: Contribution to journal › Article

7 Citations (Scopus)

Abstract

Efficiency enhancement of blue InGaN/GaN light-emitting diodes (LEDs) with shallow first well is investigated. Energy band diagrams, carrier concentrations in quantum wells, spontaneous emission spectra, light-current-voltage performance curves, and internal quantum efficiency are studied. Simulation results show that the LED is markedly improved when regular first well is replaced by shallow first well due to reduced polarization field and thereby enhanced injection efficiency of carriers in quantum wells. The proposed structure is beneficial for the blue InGaN LED even at a high level of current injection.

Original language	English
Article number	6310011
Pages (from-to)	2084-2086
Number of pages	3
Journal	IEEE Photonics Technology Letters
Volume	24
Issue number	22
DOIs	https://doi.org/10.1109/LPT.2012.2220131
Publication status	Published - 2012 Nov 26

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Electrical and Electronic Engineering

Cite this

Wang, T. H., & Kuo, Y. K. (2012). Efficiency enhancement of blue InGaN light-emitting diodes with shallow first well. IEEE Photonics Technology Letters, 24(22), 2084-2086. [6310011]. https://doi.org/10.1109/LPT.2012.2220131

@article{8af70b01809342f68f222ddd8710e037,

title = "Efficiency enhancement of blue InGaN light-emitting diodes with shallow first well",

abstract = "Efficiency enhancement of blue InGaN/GaN light-emitting diodes (LEDs) with shallow first well is investigated. Energy band diagrams, carrier concentrations in quantum wells, spontaneous emission spectra, light-current-voltage performance curves, and internal quantum efficiency are studied. Simulation results show that the LED is markedly improved when regular first well is replaced by shallow first well due to reduced polarization field and thereby enhanced injection efficiency of carriers in quantum wells. The proposed structure is beneficial for the blue InGaN LED even at a high level of current injection.",

author = "Wang, {Tsun Hsin} and Kuo, {Yen Kuang}",

year = "2012",

month = nov

day = "26",

doi = "10.1109/LPT.2012.2220131",

language = "English",

volume = "24",

pages = "2084--2086",

journal = "IEEE Photonics Technology Letters",

issn = "1041-1135",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "22",

}

TY - JOUR

T1 - Efficiency enhancement of blue InGaN light-emitting diodes with shallow first well

AU - Wang, Tsun Hsin

AU - Kuo, Yen Kuang

PY - 2012/11/26

Y1 - 2012/11/26

N2 - Efficiency enhancement of blue InGaN/GaN light-emitting diodes (LEDs) with shallow first well is investigated. Energy band diagrams, carrier concentrations in quantum wells, spontaneous emission spectra, light-current-voltage performance curves, and internal quantum efficiency are studied. Simulation results show that the LED is markedly improved when regular first well is replaced by shallow first well due to reduced polarization field and thereby enhanced injection efficiency of carriers in quantum wells. The proposed structure is beneficial for the blue InGaN LED even at a high level of current injection.

AB - Efficiency enhancement of blue InGaN/GaN light-emitting diodes (LEDs) with shallow first well is investigated. Energy band diagrams, carrier concentrations in quantum wells, spontaneous emission spectra, light-current-voltage performance curves, and internal quantum efficiency are studied. Simulation results show that the LED is markedly improved when regular first well is replaced by shallow first well due to reduced polarization field and thereby enhanced injection efficiency of carriers in quantum wells. The proposed structure is beneficial for the blue InGaN LED even at a high level of current injection.

UR - http://www.scopus.com/inward/record.url?scp=84869387727&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84869387727&partnerID=8YFLogxK

U2 - 10.1109/LPT.2012.2220131

DO - 10.1109/LPT.2012.2220131

M3 - Article

AN - SCOPUS:84869387727

VL - 24

SP - 2084

EP - 2086

JO - IEEE Photonics Technology Letters

JF - IEEE Photonics Technology Letters

SN - 1041-1135

IS - 22

M1 - 6310011

ER -

Access to Document

10.1109/LPT.2012.2220131