Abstract
Efficiency enhancement of blue InGaN/GaN light-emitting diodes (LEDs) with shallow first well is investigated. Energy band diagrams, carrier concentrations in quantum wells, spontaneous emission spectra, light-current-voltage performance curves, and internal quantum efficiency are studied. Simulation results show that the LED is markedly improved when regular first well is replaced by shallow first well due to reduced polarization field and thereby enhanced injection efficiency of carriers in quantum wells. The proposed structure is beneficial for the blue InGaN LED even at a high level of current injection.
| Original language | English |
|---|---|
| Article number | 6310011 |
| Pages (from-to) | 2084-2086 |
| Number of pages | 3 |
| Journal | IEEE Photonics Technology Letters |
| Volume | 24 |
| Issue number | 22 |
| DOIs | |
| Publication status | Published - 2012 Nov 26 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Electrical and Electronic Engineering
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Wang, T. H., & Kuo, Y. K. (2012). Efficiency enhancement of blue InGaN light-emitting diodes with shallow first well. IEEE Photonics Technology Letters, 24(22), 2084-2086. [6310011]. https://doi.org/10.1109/LPT.2012.2220131