Abstract
In recent literatures, the quantum efficiency of conventional blue InGaN light-emitting diodes (LEDs) is quite limited under relatively high driving current with conventional GaN barriers due presumably to the poor injection efficiency of hole. In this study, the efficiency enhancement of blue InGaN LEDs with indium composition graded InGaN barriers is proposed. The energy band diagram, carrier concentration in the quantum wells, diagram of hole current, radiative recombination rate, L-I curves, and internal quantum efficiency are investigated numerically. The simulation results show that the InGaN LED with graded InGaN barriers has better performance over its conventional counterpart with GaN barriers due to enhanced efficiency of hole injection. The simulation results also suggest that under relatively high current injection, the internal quantum efficiency and output light power are markedly improved when the traditional GaN barriers are replaced by graded InGaN barriers. According to the improved optical properties, the new-designed LED has promising potential in solid state lighting.
| Original language | English |
|---|---|
| Title of host publication | Light-Emitting Diodes |
| Subtitle of host publication | Materials, Devices, and Applications for Solid State Lighting XV |
| Volume | 7954 |
| DOIs | |
| Publication status | Published - 2011 Mar 28 |
| Event | Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV - San Francisco, CA, United States Duration: 2011 Jan 25 → 2011 Jan 27 |
Other
| Other | Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV |
|---|---|
| Country | United States |
| City | San Francisco, CA |
| Period | 11-01-25 → 11-01-27 |
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All Science Journal Classification (ASJC) codes
- Applied Mathematics
- Computer Science Applications
- Electrical and Electronic Engineering
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
Cite this
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Efficiency enhancement of blue InGaN LEDs with indium composition graded InGaN barriers. / Wang, Tsun Hsin; Chang, Jih-Yuan; Tsai, Miao Chan; Kuo, Yen-Kuang.
Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV. Vol. 7954 2011. 79541F.Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Efficiency enhancement of blue InGaN LEDs with indium composition graded InGaN barriers
AU - Wang, Tsun Hsin
AU - Chang, Jih-Yuan
AU - Tsai, Miao Chan
AU - Kuo, Yen-Kuang
PY - 2011/3/28
Y1 - 2011/3/28
N2 - In recent literatures, the quantum efficiency of conventional blue InGaN light-emitting diodes (LEDs) is quite limited under relatively high driving current with conventional GaN barriers due presumably to the poor injection efficiency of hole. In this study, the efficiency enhancement of blue InGaN LEDs with indium composition graded InGaN barriers is proposed. The energy band diagram, carrier concentration in the quantum wells, diagram of hole current, radiative recombination rate, L-I curves, and internal quantum efficiency are investigated numerically. The simulation results show that the InGaN LED with graded InGaN barriers has better performance over its conventional counterpart with GaN barriers due to enhanced efficiency of hole injection. The simulation results also suggest that under relatively high current injection, the internal quantum efficiency and output light power are markedly improved when the traditional GaN barriers are replaced by graded InGaN barriers. According to the improved optical properties, the new-designed LED has promising potential in solid state lighting.
AB - In recent literatures, the quantum efficiency of conventional blue InGaN light-emitting diodes (LEDs) is quite limited under relatively high driving current with conventional GaN barriers due presumably to the poor injection efficiency of hole. In this study, the efficiency enhancement of blue InGaN LEDs with indium composition graded InGaN barriers is proposed. The energy band diagram, carrier concentration in the quantum wells, diagram of hole current, radiative recombination rate, L-I curves, and internal quantum efficiency are investigated numerically. The simulation results show that the InGaN LED with graded InGaN barriers has better performance over its conventional counterpart with GaN barriers due to enhanced efficiency of hole injection. The simulation results also suggest that under relatively high current injection, the internal quantum efficiency and output light power are markedly improved when the traditional GaN barriers are replaced by graded InGaN barriers. According to the improved optical properties, the new-designed LED has promising potential in solid state lighting.
UR - http://www.scopus.com/inward/record.url?scp=79952942735&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79952942735&partnerID=8YFLogxK
U2 - 10.1117/12.874909
DO - 10.1117/12.874909
M3 - Conference contribution
AN - SCOPUS:79952942735
SN - 9780819484918
VL - 7954
BT - Light-Emitting Diodes
ER -