Efficiency enhancement of blue InGaN LEDs with indium composition graded InGaN barriers

Tsun Hsin Wang; Jih-Yuan Chang; Miao Chan Tsai; Yen-Kuang Kuo

doi:10.1117/12.874909

Efficiency enhancement of blue InGaN LEDs with indium composition graded InGaN barriers

Tsun Hsin Wang, Jih-Yuan Chang, Miao Chan Tsai, Yen-Kuang Kuo

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

9 Citations (Scopus)

Abstract

In recent literatures, the quantum efficiency of conventional blue InGaN light-emitting diodes (LEDs) is quite limited under relatively high driving current with conventional GaN barriers due presumably to the poor injection efficiency of hole. In this study, the efficiency enhancement of blue InGaN LEDs with indium composition graded InGaN barriers is proposed. The energy band diagram, carrier concentration in the quantum wells, diagram of hole current, radiative recombination rate, L-I curves, and internal quantum efficiency are investigated numerically. The simulation results show that the InGaN LED with graded InGaN barriers has better performance over its conventional counterpart with GaN barriers due to enhanced efficiency of hole injection. The simulation results also suggest that under relatively high current injection, the internal quantum efficiency and output light power are markedly improved when the traditional GaN barriers are replaced by graded InGaN barriers. According to the improved optical properties, the new-designed LED has promising potential in solid state lighting.

Original language	English
Title of host publication	Light-Emitting Diodes
Subtitle of host publication	Materials, Devices, and Applications for Solid State Lighting XV
Volume	7954
DOIs	https://doi.org/10.1117/12.874909
Publication status	Published - 2011 Mar 28
Event	Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV - San Francisco, CA, United States Duration: 2011 Jan 25 → 2011 Jan 27

Other

Other	Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV
Country	United States
City	San Francisco, CA
Period	11-01-25 → 11-01-27

All Science Journal Classification (ASJC) codes

Applied Mathematics
Computer Science Applications
Electrical and Electronic Engineering
Electronic, Optical and Magnetic Materials
Condensed Matter Physics

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Cite this

@inproceedings{dce5924d715a493781672815801bdf0e,

title = "Efficiency enhancement of blue InGaN LEDs with indium composition graded InGaN barriers",

abstract = "In recent literatures, the quantum efficiency of conventional blue InGaN light-emitting diodes (LEDs) is quite limited under relatively high driving current with conventional GaN barriers due presumably to the poor injection efficiency of hole. In this study, the efficiency enhancement of blue InGaN LEDs with indium composition graded InGaN barriers is proposed. The energy band diagram, carrier concentration in the quantum wells, diagram of hole current, radiative recombination rate, L-I curves, and internal quantum efficiency are investigated numerically. The simulation results show that the InGaN LED with graded InGaN barriers has better performance over its conventional counterpart with GaN barriers due to enhanced efficiency of hole injection. The simulation results also suggest that under relatively high current injection, the internal quantum efficiency and output light power are markedly improved when the traditional GaN barriers are replaced by graded InGaN barriers. According to the improved optical properties, the new-designed LED has promising potential in solid state lighting.",

author = "Wang, {Tsun Hsin} and Jih-Yuan Chang and Tsai, {Miao Chan} and Yen-Kuang Kuo",

year = "2011",

month = mar,

day = "28",

doi = "10.1117/12.874909",

language = "English",

isbn = "9780819484918",

volume = "7954",

booktitle = "Light-Emitting Diodes",

note = "Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV ; Conference date: 25-01-2011 Through 27-01-2011",

}

Wang, TH, Chang, J-Y, Tsai, MC & Kuo, Y-K 2011, Efficiency enhancement of blue InGaN LEDs with indium composition graded InGaN barriers. in Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV. vol. 7954, 79541F, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV, San Francisco, CA, United States, 11-01-25. https://doi.org/10.1117/12.874909

TY - GEN

T1 - Efficiency enhancement of blue InGaN LEDs with indium composition graded InGaN barriers

AU - Wang, Tsun Hsin

AU - Chang, Jih-Yuan

AU - Tsai, Miao Chan

AU - Kuo, Yen-Kuang

PY - 2011/3/28

Y1 - 2011/3/28

N2 - In recent literatures, the quantum efficiency of conventional blue InGaN light-emitting diodes (LEDs) is quite limited under relatively high driving current with conventional GaN barriers due presumably to the poor injection efficiency of hole. In this study, the efficiency enhancement of blue InGaN LEDs with indium composition graded InGaN barriers is proposed. The energy band diagram, carrier concentration in the quantum wells, diagram of hole current, radiative recombination rate, L-I curves, and internal quantum efficiency are investigated numerically. The simulation results show that the InGaN LED with graded InGaN barriers has better performance over its conventional counterpart with GaN barriers due to enhanced efficiency of hole injection. The simulation results also suggest that under relatively high current injection, the internal quantum efficiency and output light power are markedly improved when the traditional GaN barriers are replaced by graded InGaN barriers. According to the improved optical properties, the new-designed LED has promising potential in solid state lighting.

AB - In recent literatures, the quantum efficiency of conventional blue InGaN light-emitting diodes (LEDs) is quite limited under relatively high driving current with conventional GaN barriers due presumably to the poor injection efficiency of hole. In this study, the efficiency enhancement of blue InGaN LEDs with indium composition graded InGaN barriers is proposed. The energy band diagram, carrier concentration in the quantum wells, diagram of hole current, radiative recombination rate, L-I curves, and internal quantum efficiency are investigated numerically. The simulation results show that the InGaN LED with graded InGaN barriers has better performance over its conventional counterpart with GaN barriers due to enhanced efficiency of hole injection. The simulation results also suggest that under relatively high current injection, the internal quantum efficiency and output light power are markedly improved when the traditional GaN barriers are replaced by graded InGaN barriers. According to the improved optical properties, the new-designed LED has promising potential in solid state lighting.

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