Efficiency enhancement of blue InGaN LEDs with indium composition graded InGaN barriers

Tsun Hsin Wang, Jih-Yuan Chang, Miao Chan Tsai, Yen-Kuang Kuo

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

In recent literatures, the quantum efficiency of conventional blue InGaN light-emitting diodes (LEDs) is quite limited under relatively high driving current with conventional GaN barriers due presumably to the poor injection efficiency of hole. In this study, the efficiency enhancement of blue InGaN LEDs with indium composition graded InGaN barriers is proposed. The energy band diagram, carrier concentration in the quantum wells, diagram of hole current, radiative recombination rate, L-I curves, and internal quantum efficiency are investigated numerically. The simulation results show that the InGaN LED with graded InGaN barriers has better performance over its conventional counterpart with GaN barriers due to enhanced efficiency of hole injection. The simulation results also suggest that under relatively high current injection, the internal quantum efficiency and output light power are markedly improved when the traditional GaN barriers are replaced by graded InGaN barriers. According to the improved optical properties, the new-designed LED has promising potential in solid state lighting.

Original languageEnglish
Title of host publicationLight-Emitting Diodes
Subtitle of host publicationMaterials, Devices, and Applications for Solid State Lighting XV
Volume7954
DOIs
Publication statusPublished - 2011 Mar 28
EventLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV - San Francisco, CA, United States
Duration: 2011 Jan 252011 Jan 27

Other

OtherLight-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV
CountryUnited States
CitySan Francisco, CA
Period11-01-2511-01-27

Fingerprint

InGaN
Indium
Diode
Light emitting diodes
indium
light emitting diodes
Enhancement
Quantum efficiency
augmentation
Quantum Efficiency
Chemical analysis
quantum efficiency
Injection
injection
high current
Diagram
diagrams
Band structure
Solid-state Lighting
Semiconductor quantum wells

All Science Journal Classification (ASJC) codes

  • Applied Mathematics
  • Computer Science Applications
  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics

Cite this

Wang, T. H., Chang, J-Y., Tsai, M. C., & Kuo, Y-K. (2011). Efficiency enhancement of blue InGaN LEDs with indium composition graded InGaN barriers. In Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV (Vol. 7954). [79541F] https://doi.org/10.1117/12.874909
Wang, Tsun Hsin ; Chang, Jih-Yuan ; Tsai, Miao Chan ; Kuo, Yen-Kuang. / Efficiency enhancement of blue InGaN LEDs with indium composition graded InGaN barriers. Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV. Vol. 7954 2011.
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abstract = "In recent literatures, the quantum efficiency of conventional blue InGaN light-emitting diodes (LEDs) is quite limited under relatively high driving current with conventional GaN barriers due presumably to the poor injection efficiency of hole. In this study, the efficiency enhancement of blue InGaN LEDs with indium composition graded InGaN barriers is proposed. The energy band diagram, carrier concentration in the quantum wells, diagram of hole current, radiative recombination rate, L-I curves, and internal quantum efficiency are investigated numerically. The simulation results show that the InGaN LED with graded InGaN barriers has better performance over its conventional counterpart with GaN barriers due to enhanced efficiency of hole injection. The simulation results also suggest that under relatively high current injection, the internal quantum efficiency and output light power are markedly improved when the traditional GaN barriers are replaced by graded InGaN barriers. According to the improved optical properties, the new-designed LED has promising potential in solid state lighting.",
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Wang, TH, Chang, J-Y, Tsai, MC & Kuo, Y-K 2011, Efficiency enhancement of blue InGaN LEDs with indium composition graded InGaN barriers. in Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV. vol. 7954, 79541F, Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV, San Francisco, CA, United States, 11-01-25. https://doi.org/10.1117/12.874909

Efficiency enhancement of blue InGaN LEDs with indium composition graded InGaN barriers. / Wang, Tsun Hsin; Chang, Jih-Yuan; Tsai, Miao Chan; Kuo, Yen-Kuang.

Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV. Vol. 7954 2011. 79541F.

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Wang TH, Chang J-Y, Tsai MC, Kuo Y-K. Efficiency enhancement of blue InGaN LEDs with indium composition graded InGaN barriers. In Light-Emitting Diodes: Materials, Devices, and Applications for Solid State Lighting XV. Vol. 7954. 2011. 79541F https://doi.org/10.1117/12.874909