Abstract
In this study, the effect of ultraviolet treatment on the photovoltaic property of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) /n-type Si (PEDOT:PSS/n-Si) diodes was examined. Power conversion efficiency of the PEDOT:PSS/n-Si diodes in the light (AM 1.5G, 100 mW/cm2) was improved by reducing the device series resistance by ultraviolet treatment. This study shows that conductivity of PEDOT:PSS plays an important role in PEDOT:PSS/n-Si photovoltaic devices.
| Original language | English |
|---|---|
| Pages (from-to) | 2154-2157 |
| Number of pages | 4 |
| Journal | Solar Energy Materials and Solar Cells |
| Volume | 94 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2010 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Renewable Energy, Sustainability and the Environment
- Surfaces, Coatings and Films
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Effects of ultraviolet treatment on the photovoltaic property of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate)/n-type Si diodes. / Chin, Yi Min; Lin, Jung Chung; Lin, Yow Jon; Wu, Kuo Chen.
In: Solar Energy Materials and Solar Cells, Vol. 94, No. 12, 01.12.2010, p. 2154-2157.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effects of ultraviolet treatment on the photovoltaic property of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate)/n-type Si diodes
AU - Chin, Yi Min
AU - Lin, Jung Chung
AU - Lin, Yow Jon
AU - Wu, Kuo Chen
PY - 2010/12/1
Y1 - 2010/12/1
N2 - In this study, the effect of ultraviolet treatment on the photovoltaic property of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) /n-type Si (PEDOT:PSS/n-Si) diodes was examined. Power conversion efficiency of the PEDOT:PSS/n-Si diodes in the light (AM 1.5G, 100 mW/cm2) was improved by reducing the device series resistance by ultraviolet treatment. This study shows that conductivity of PEDOT:PSS plays an important role in PEDOT:PSS/n-Si photovoltaic devices.
AB - In this study, the effect of ultraviolet treatment on the photovoltaic property of poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate) /n-type Si (PEDOT:PSS/n-Si) diodes was examined. Power conversion efficiency of the PEDOT:PSS/n-Si diodes in the light (AM 1.5G, 100 mW/cm2) was improved by reducing the device series resistance by ultraviolet treatment. This study shows that conductivity of PEDOT:PSS plays an important role in PEDOT:PSS/n-Si photovoltaic devices.
UR - http://www.scopus.com/inward/record.url?scp=77957682433&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=77957682433&partnerID=8YFLogxK
U2 - 10.1016/j.solmat.2010.07.002
DO - 10.1016/j.solmat.2010.07.002
M3 - Article
AN - SCOPUS:77957682433
VL - 94
SP - 2154
EP - 2157
JO - Solar Energy Materials and Solar Cells
JF - Solar Energy Materials and Solar Cells
SN - 0927-0248
IS - 12
ER -