Effects of ultraviolet treatment on the contact resistivity and electronic transport at the Ti/ZnO interfaces

Yow Jon Lin, Chia Lung Tsai, W. R. Liu, W. F. Hsieh, C. H. Hsu, Hou Yen Tsao, Jian An Chu, Hsing Cheng Chang

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Abstract

We report on the effect of ultraviolet (UV) treatment on the specific contact resistance (ρ) and electronic transport at the Ti/ZnO interfaces. The experimental results show the same barrier height of Ti/ZnO samples without UV treatment as Ti/ZnO samples with UV treatment and the higher ρ of Ti/ZnO samples with UV treatment than Ti/ZnO samples without UV treatment, suggesting the barrier-height independence of ρ. Based on the thermionic-emission model and x-ray photoelectron spectroscopy results, we found that the induced decrease in the number of the hydroxides at the surface region of ZnO by UV treatment resulted in decreases in the electron concentration near the surface region and the excess current component related to tunneling, increasing in ρ of Ti/ZnO samples.

Original languageEnglish
Article number013701
JournalJournal of Applied Physics
Volume106
Issue number1
DOIs
Publication statusPublished - 2009 Jul 24

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Lin, Y. J., Tsai, C. L., Liu, W. R., Hsieh, W. F., Hsu, C. H., Tsao, H. Y., Chu, J. A., & Chang, H. C. (2009). Effects of ultraviolet treatment on the contact resistivity and electronic transport at the Ti/ZnO interfaces. Journal of Applied Physics, 106(1), [013701]. https://doi.org/10.1063/1.3157201