Effects of the thickness of capping layers on electrical properties of Ni ohmic contacts on p-AlGaN and p-GaN using an ohmic recessed technique

Yow-Jon Lin, Yow Lin Chu

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Abstract

In this study, the effects of the thickness of p-GaN (p-InGaN) capping layers grown on top of p-AlGaN (p-GaN) on electrical properties of Ni ohmic contacts on p-AlGaN (p-GaN) were investigated. The experiments and simulations indicated that the thicker p-GaN (p-InGaN) capping layer grown on p-AlGaN (p-GaN) led to the formation of the higher concentration of a two-dimensional hole gas (2DHG) at the interfaces. Consequently, we deduce that holes can be easily injected into the p-AlGaN (p-GaN) layer through recessed channels and a 2DHG channel, which results in the formation of the low contact resistivity. This provides a rational guideline for the development of new processing methodologies to enhance nitride semiconductor-based optoelectronic devices.

Original languageEnglish
Article number032
Pages (from-to)1172-1175
Number of pages4
JournalSemiconductor Science and Technology
Volume21
Issue number8
DOIs
Publication statusPublished - 2006 Aug 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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