Abstract
In this study, the effects of the thickness of p-GaN (p-InGaN) capping layers grown on top of p-AlGaN (p-GaN) on electrical properties of Ni ohmic contacts on p-AlGaN (p-GaN) were investigated. The experiments and simulations indicated that the thicker p-GaN (p-InGaN) capping layer grown on p-AlGaN (p-GaN) led to the formation of the higher concentration of a two-dimensional hole gas (2DHG) at the interfaces. Consequently, we deduce that holes can be easily injected into the p-AlGaN (p-GaN) layer through recessed channels and a 2DHG channel, which results in the formation of the low contact resistivity. This provides a rational guideline for the development of new processing methodologies to enhance nitride semiconductor-based optoelectronic devices.
Original language | English |
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Article number | 032 |
Pages (from-to) | 1172-1175 |
Number of pages | 4 |
Journal | Semiconductor Science and Technology |
Volume | 21 |
Issue number | 8 |
DOIs | |
Publication status | Published - 2006 Aug 1 |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry