Effects of the thickness of capping layers on electrical properties of Ni ohmic contacts on p-AlGaN and p-GaN using an ohmic recessed technique

Yow-Jon Lin, Yow Lin Chu

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

In this study, the effects of the thickness of p-GaN (p-InGaN) capping layers grown on top of p-AlGaN (p-GaN) on electrical properties of Ni ohmic contacts on p-AlGaN (p-GaN) were investigated. The experiments and simulations indicated that the thicker p-GaN (p-InGaN) capping layer grown on p-AlGaN (p-GaN) led to the formation of the higher concentration of a two-dimensional hole gas (2DHG) at the interfaces. Consequently, we deduce that holes can be easily injected into the p-AlGaN (p-GaN) layer through recessed channels and a 2DHG channel, which results in the formation of the low contact resistivity. This provides a rational guideline for the development of new processing methodologies to enhance nitride semiconductor-based optoelectronic devices.

Original languageEnglish
Article number032
Pages (from-to)1172-1175
Number of pages4
JournalSemiconductor Science and Technology
Volume21
Issue number8
DOIs
Publication statusPublished - 2006 Aug 1

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Ohmic contacts
Nitrides
Optoelectronic devices
electric contacts
Electric properties
electrical properties
Semiconductor materials
Processing
Gases
Experiments
optoelectronic devices
nitrides
methodology
electrical resistivity
gases
aluminum gallium nitride
simulation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

@article{a0ab4bb7d8864c88b3eeb6dcd9a0e275,
title = "Effects of the thickness of capping layers on electrical properties of Ni ohmic contacts on p-AlGaN and p-GaN using an ohmic recessed technique",
abstract = "In this study, the effects of the thickness of p-GaN (p-InGaN) capping layers grown on top of p-AlGaN (p-GaN) on electrical properties of Ni ohmic contacts on p-AlGaN (p-GaN) were investigated. The experiments and simulations indicated that the thicker p-GaN (p-InGaN) capping layer grown on p-AlGaN (p-GaN) led to the formation of the higher concentration of a two-dimensional hole gas (2DHG) at the interfaces. Consequently, we deduce that holes can be easily injected into the p-AlGaN (p-GaN) layer through recessed channels and a 2DHG channel, which results in the formation of the low contact resistivity. This provides a rational guideline for the development of new processing methodologies to enhance nitride semiconductor-based optoelectronic devices.",
author = "Yow-Jon Lin and Chu, {Yow Lin}",
year = "2006",
month = "8",
day = "1",
doi = "10.1088/0268-1242/21/8/032",
language = "English",
volume = "21",
pages = "1172--1175",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "8",

}

TY - JOUR

T1 - Effects of the thickness of capping layers on electrical properties of Ni ohmic contacts on p-AlGaN and p-GaN using an ohmic recessed technique

AU - Lin, Yow-Jon

AU - Chu, Yow Lin

PY - 2006/8/1

Y1 - 2006/8/1

N2 - In this study, the effects of the thickness of p-GaN (p-InGaN) capping layers grown on top of p-AlGaN (p-GaN) on electrical properties of Ni ohmic contacts on p-AlGaN (p-GaN) were investigated. The experiments and simulations indicated that the thicker p-GaN (p-InGaN) capping layer grown on p-AlGaN (p-GaN) led to the formation of the higher concentration of a two-dimensional hole gas (2DHG) at the interfaces. Consequently, we deduce that holes can be easily injected into the p-AlGaN (p-GaN) layer through recessed channels and a 2DHG channel, which results in the formation of the low contact resistivity. This provides a rational guideline for the development of new processing methodologies to enhance nitride semiconductor-based optoelectronic devices.

AB - In this study, the effects of the thickness of p-GaN (p-InGaN) capping layers grown on top of p-AlGaN (p-GaN) on electrical properties of Ni ohmic contacts on p-AlGaN (p-GaN) were investigated. The experiments and simulations indicated that the thicker p-GaN (p-InGaN) capping layer grown on p-AlGaN (p-GaN) led to the formation of the higher concentration of a two-dimensional hole gas (2DHG) at the interfaces. Consequently, we deduce that holes can be easily injected into the p-AlGaN (p-GaN) layer through recessed channels and a 2DHG channel, which results in the formation of the low contact resistivity. This provides a rational guideline for the development of new processing methodologies to enhance nitride semiconductor-based optoelectronic devices.

UR - http://www.scopus.com/inward/record.url?scp=33749056388&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33749056388&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/21/8/032

DO - 10.1088/0268-1242/21/8/032

M3 - Article

VL - 21

SP - 1172

EP - 1175

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 8

M1 - 032

ER -