Abstract
In this study, the effects of the thickness of p-GaN (p-InGaN) capping layers grown on top of p-AlGaN (p-GaN) on electrical properties of Ni ohmic contacts on p-AlGaN (p-GaN) were investigated. The experiments and simulations indicated that the thicker p-GaN (p-InGaN) capping layer grown on p-AlGaN (p-GaN) led to the formation of the higher concentration of a two-dimensional hole gas (2DHG) at the interfaces. Consequently, we deduce that holes can be easily injected into the p-AlGaN (p-GaN) layer through recessed channels and a 2DHG channel, which results in the formation of the low contact resistivity. This provides a rational guideline for the development of new processing methodologies to enhance nitride semiconductor-based optoelectronic devices.
| Original language | English |
|---|---|
| Article number | 032 |
| Pages (from-to) | 1172-1175 |
| Number of pages | 4 |
| Journal | Semiconductor Science and Technology |
| Volume | 21 |
| Issue number | 8 |
| DOIs | |
| Publication status | Published - 2006 Aug 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Effects of the thickness of capping layers on electrical properties of Ni ohmic contacts on p-AlGaN and p-GaN using an ohmic recessed technique. / Lin, Yow-Jon; Chu, Yow Lin.
In: Semiconductor Science and Technology, Vol. 21, No. 8, 032, 01.08.2006, p. 1172-1175.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effects of the thickness of capping layers on electrical properties of Ni ohmic contacts on p-AlGaN and p-GaN using an ohmic recessed technique
AU - Lin, Yow-Jon
AU - Chu, Yow Lin
PY - 2006/8/1
Y1 - 2006/8/1
N2 - In this study, the effects of the thickness of p-GaN (p-InGaN) capping layers grown on top of p-AlGaN (p-GaN) on electrical properties of Ni ohmic contacts on p-AlGaN (p-GaN) were investigated. The experiments and simulations indicated that the thicker p-GaN (p-InGaN) capping layer grown on p-AlGaN (p-GaN) led to the formation of the higher concentration of a two-dimensional hole gas (2DHG) at the interfaces. Consequently, we deduce that holes can be easily injected into the p-AlGaN (p-GaN) layer through recessed channels and a 2DHG channel, which results in the formation of the low contact resistivity. This provides a rational guideline for the development of new processing methodologies to enhance nitride semiconductor-based optoelectronic devices.
AB - In this study, the effects of the thickness of p-GaN (p-InGaN) capping layers grown on top of p-AlGaN (p-GaN) on electrical properties of Ni ohmic contacts on p-AlGaN (p-GaN) were investigated. The experiments and simulations indicated that the thicker p-GaN (p-InGaN) capping layer grown on p-AlGaN (p-GaN) led to the formation of the higher concentration of a two-dimensional hole gas (2DHG) at the interfaces. Consequently, we deduce that holes can be easily injected into the p-AlGaN (p-GaN) layer through recessed channels and a 2DHG channel, which results in the formation of the low contact resistivity. This provides a rational guideline for the development of new processing methodologies to enhance nitride semiconductor-based optoelectronic devices.
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U2 - 10.1088/0268-1242/21/8/032
DO - 10.1088/0268-1242/21/8/032
M3 - Article
VL - 21
SP - 1172
EP - 1175
JO - Semiconductor Science and Technology
JF - Semiconductor Science and Technology
SN - 0268-1242
IS - 8
M1 - 032
ER -