Effects of sulfide treatment on electronic transport of graphene/n-type Si Schottky diodes

Jian Jhou Zeng, Yow Jon Lin

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The present work reports the fabrication and detailed electrical properties of graphene/n-type Si Schottky diodes with and without sulfide treatment. The graphene/n-type Si Schottky diode without sulfide treatment shows a poor rectifying behavior with an ideality factor (η) of 4.2 and high leakage. η > 2 implies that the interfacial defects influence the electronic conduction through the device. However, the graphene/n-type Si Schottky diode with sulfide treatment for 5 min shows a good rectifying behavior with η of 1.8 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the reduction of the defect density. These experimental demonstrations suggest that it may be possible to minimize the adverse effects of the interface states to obtain functional devices using sulfide treatment. In addition, the graphene/n-type Si Schottky diode with sulfide treatment for 10 min shows a poor rectifying behavior with η of 2.5 and high leakage. Note, a suitable sulfide treatment time is an important issue for improving the device performance.

Original languageEnglish
Pages (from-to)250-254
Number of pages5
JournalMaterials Chemistry and Physics
Volume145
Issue number1-2
DOIs
Publication statusPublished - 2014 May 15

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Sulfides
Schottky diodes
Graphene
sulfides
graphene
Diodes
electronics
leakage
Interface states
Defect density
defects
Passivation
passivity
Electric properties
Demonstrations
electrical properties
conduction
Fabrication
Defects

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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abstract = "The present work reports the fabrication and detailed electrical properties of graphene/n-type Si Schottky diodes with and without sulfide treatment. The graphene/n-type Si Schottky diode without sulfide treatment shows a poor rectifying behavior with an ideality factor (η) of 4.2 and high leakage. η > 2 implies that the interfacial defects influence the electronic conduction through the device. However, the graphene/n-type Si Schottky diode with sulfide treatment for 5 min shows a good rectifying behavior with η of 1.8 and low leakage. Such an improvement indicates that a good passivation is formed at the interface as a result of the reduction of the defect density. These experimental demonstrations suggest that it may be possible to minimize the adverse effects of the interface states to obtain functional devices using sulfide treatment. In addition, the graphene/n-type Si Schottky diode with sulfide treatment for 10 min shows a poor rectifying behavior with η of 2.5 and high leakage. Note, a suitable sulfide treatment time is an important issue for improving the device performance.",
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Effects of sulfide treatment on electronic transport of graphene/n-type Si Schottky diodes. / Zeng, Jian Jhou; Lin, Yow Jon.

In: Materials Chemistry and Physics, Vol. 145, No. 1-2, 15.05.2014, p. 250-254.

Research output: Contribution to journalArticle

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