Effects of quantum barriers and electron-blocking layer in deep-ultraviolet light-emitting diodes

Jih Yuan Chang; Man Fang Huang; Fang Ming Chen; Bo Ting Liou; Ya Hsuan Shih; Yen Kuang Kuo

doi:10.1088/1361-6463/aaa440

Effects of quantum barriers and electron-blocking layer in deep-ultraviolet light-emitting diodes

Jih Yuan Chang, Man Fang Huang, Fang Ming Chen, Bo Ting Liou, Ya Hsuan Shih, Yen Kuang Kuo

Research output: Contribution to journal › Article

7 Citations (Scopus)

Abstract

The impact of quantum barriers (QBs) and electron-blocking layers (EBL) on the output performance of deep-ultraviolet (DUV) light-emitting diodes (LEDs) is investigated systematically. Specific LED structures with strain-compensated and p-staircase-interlayer configurations are proposed and explored in detail. Simulation results show that Al compositions of both QBs and EBL are critical to the capability of carrier confinement of the active region. A DUV LED structure with excellent output performance can be obtained provided that the QBs and EBL are properly designed via band engineering. Furthermore, LED structures without EBL are also investigated. If the DUV LED has well-designed deeper quantum wells, an excellent output performance can be maintained, even when the LED structure is without EBL.

Original language	English
Article number	075106
Journal	Journal of Physics D: Applied Physics
Volume	51
Issue number	7
DOIs	https://doi.org/10.1088/1361-6463/aaa440
Publication status	Published - 2018 Jan 31

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Acoustics and Ultrasonics
Surfaces, Coatings and Films

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Chang, J. Y., Huang, M. F., Chen, F. M., Liou, B. T., Shih, Y. H., & Kuo, Y. K. (2018). Effects of quantum barriers and electron-blocking layer in deep-ultraviolet light-emitting diodes. Journal of Physics D: Applied Physics, 51(7), [075106]. https://doi.org/10.1088/1361-6463/aaa440

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abstract = "The impact of quantum barriers (QBs) and electron-blocking layers (EBL) on the output performance of deep-ultraviolet (DUV) light-emitting diodes (LEDs) is investigated systematically. Specific LED structures with strain-compensated and p-staircase-interlayer configurations are proposed and explored in detail. Simulation results show that Al compositions of both QBs and EBL are critical to the capability of carrier confinement of the active region. A DUV LED structure with excellent output performance can be obtained provided that the QBs and EBL are properly designed via band engineering. Furthermore, LED structures without EBL are also investigated. If the DUV LED has well-designed deeper quantum wells, an excellent output performance can be maintained, even when the LED structure is without EBL.",

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AU - Kuo, Yen Kuang

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