Abstract
The impact of quantum barriers (QBs) and electron-blocking layers (EBL) on the output performance of deep-ultraviolet (DUV) light-emitting diodes (LEDs) is investigated systematically. Specific LED structures with strain-compensated and p-staircase-interlayer configurations are proposed and explored in detail. Simulation results show that Al compositions of both QBs and EBL are critical to the capability of carrier confinement of the active region. A DUV LED structure with excellent output performance can be obtained provided that the QBs and EBL are properly designed via band engineering. Furthermore, LED structures without EBL are also investigated. If the DUV LED has well-designed deeper quantum wells, an excellent output performance can be maintained, even when the LED structure is without EBL.
| Original language | English |
|---|---|
| Article number | 075106 |
| Journal | Journal of Physics D: Applied Physics |
| Volume | 51 |
| Issue number | 7 |
| DOIs | |
| Publication status | Published - 2018 Jan 31 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Acoustics and Ultrasonics
- Surfaces, Coatings and Films
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Effects of quantum barriers and electron-blocking layer in deep-ultraviolet light-emitting diodes. / Chang, Jih-Yuan; Huang, Man-Fang; Chen, Fang Ming; Liou, Bo Ting; Shih, Ya Hsuan; Kuo, Yen-Kuang.
In: Journal of Physics D: Applied Physics, Vol. 51, No. 7, 075106, 31.01.2018.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effects of quantum barriers and electron-blocking layer in deep-ultraviolet light-emitting diodes
AU - Chang, Jih-Yuan
AU - Huang, Man-Fang
AU - Chen, Fang Ming
AU - Liou, Bo Ting
AU - Shih, Ya Hsuan
AU - Kuo, Yen-Kuang
PY - 2018/1/31
Y1 - 2018/1/31
N2 - The impact of quantum barriers (QBs) and electron-blocking layers (EBL) on the output performance of deep-ultraviolet (DUV) light-emitting diodes (LEDs) is investigated systematically. Specific LED structures with strain-compensated and p-staircase-interlayer configurations are proposed and explored in detail. Simulation results show that Al compositions of both QBs and EBL are critical to the capability of carrier confinement of the active region. A DUV LED structure with excellent output performance can be obtained provided that the QBs and EBL are properly designed via band engineering. Furthermore, LED structures without EBL are also investigated. If the DUV LED has well-designed deeper quantum wells, an excellent output performance can be maintained, even when the LED structure is without EBL.
AB - The impact of quantum barriers (QBs) and electron-blocking layers (EBL) on the output performance of deep-ultraviolet (DUV) light-emitting diodes (LEDs) is investigated systematically. Specific LED structures with strain-compensated and p-staircase-interlayer configurations are proposed and explored in detail. Simulation results show that Al compositions of both QBs and EBL are critical to the capability of carrier confinement of the active region. A DUV LED structure with excellent output performance can be obtained provided that the QBs and EBL are properly designed via band engineering. Furthermore, LED structures without EBL are also investigated. If the DUV LED has well-designed deeper quantum wells, an excellent output performance can be maintained, even when the LED structure is without EBL.
UR - http://www.scopus.com/inward/record.url?scp=85041432105&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=85041432105&partnerID=8YFLogxK
U2 - 10.1088/1361-6463/aaa440
DO - 10.1088/1361-6463/aaa440
M3 - Article
VL - 51
JO - Journal Physics D: Applied Physics
JF - Journal Physics D: Applied Physics
SN - 0022-3727
IS - 7
M1 - 075106
ER -