Effects of quantum barriers and electron-blocking layer in deep-ultraviolet light-emitting diodes

Jih-Yuan Chang, Man-Fang Huang, Fang Ming Chen, Bo Ting Liou, Ya Hsuan Shih, Yen-Kuang Kuo

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The impact of quantum barriers (QBs) and electron-blocking layers (EBL) on the output performance of deep-ultraviolet (DUV) light-emitting diodes (LEDs) is investigated systematically. Specific LED structures with strain-compensated and p-staircase-interlayer configurations are proposed and explored in detail. Simulation results show that Al compositions of both QBs and EBL are critical to the capability of carrier confinement of the active region. A DUV LED structure with excellent output performance can be obtained provided that the QBs and EBL are properly designed via band engineering. Furthermore, LED structures without EBL are also investigated. If the DUV LED has well-designed deeper quantum wells, an excellent output performance can be maintained, even when the LED structure is without EBL.

Original languageEnglish
Article number075106
JournalJournal of Physics D: Applied Physics
Volume51
Issue number7
DOIs
Publication statusPublished - 2018 Jan 31

Fingerprint

ultraviolet radiation
Light emitting diodes
light emitting diodes
Electrons
electrons
output
stairways
Semiconductor quantum wells
Ultraviolet Rays
interlayers
quantum wells
engineering
configurations
Chemical analysis
simulation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Acoustics and Ultrasonics
  • Surfaces, Coatings and Films

Cite this

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abstract = "The impact of quantum barriers (QBs) and electron-blocking layers (EBL) on the output performance of deep-ultraviolet (DUV) light-emitting diodes (LEDs) is investigated systematically. Specific LED structures with strain-compensated and p-staircase-interlayer configurations are proposed and explored in detail. Simulation results show that Al compositions of both QBs and EBL are critical to the capability of carrier confinement of the active region. A DUV LED structure with excellent output performance can be obtained provided that the QBs and EBL are properly designed via band engineering. Furthermore, LED structures without EBL are also investigated. If the DUV LED has well-designed deeper quantum wells, an excellent output performance can be maintained, even when the LED structure is without EBL.",
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Effects of quantum barriers and electron-blocking layer in deep-ultraviolet light-emitting diodes. / Chang, Jih-Yuan; Huang, Man-Fang; Chen, Fang Ming; Liou, Bo Ting; Shih, Ya Hsuan; Kuo, Yen-Kuang.

In: Journal of Physics D: Applied Physics, Vol. 51, No. 7, 075106, 31.01.2018.

Research output: Contribution to journalArticle

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AU - Chang, Jih-Yuan

AU - Huang, Man-Fang

AU - Chen, Fang Ming

AU - Liou, Bo Ting

AU - Shih, Ya Hsuan

AU - Kuo, Yen-Kuang

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