Effects of oxygen deficiency in the sol-gel ZrOx film on the electrical properties of Au/ZrOx/n-type Si/In devices

Wei Chung Chen, Yow Jon Lin, Ya Hui Chen, Hsing Cheng Chang

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The ZrOx permittivity and leakage currents through Au/ZrO x/n-type Si/In structures are studied. The electrical conduction investigations suggest that the leakage behaviour is governed by the Schottky emission. The leakage current strongly depends on the O/Zr atomic concentration ratio of ZrOx films and an increase in the number of oxygen-vacancy-related defects may result in a decrease in the ZrOx permittivity, enhancing the leakage conduction of the Au/ZrOx/n-type Si/In devices. In addition, the discrepancy in the ZrOx permittivity determined in the current density-electric field and capacitance-voltage characteristics is attributed to the formation of the intermediate ZrSi xOy layer.

Original languageEnglish
Article number055003
JournalSemiconductor Science and Technology
Volume25
Issue number5
DOIs
Publication statusPublished - 2010 Apr 28

Fingerprint

hypoxia
Sol-gels
Electric properties
leakage
Permittivity
electrical properties
gels
Oxygen
Leakage currents
permittivity
Oxygen vacancies
conduction
capacitance-voltage characteristics
Capacitance
Current density
Electric fields
Defects
Electric potential
current density
electric fields

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Materials Chemistry
  • Condensed Matter Physics

Cite this

@article{6b8e2dd14c9c43879705280314333694,
title = "Effects of oxygen deficiency in the sol-gel ZrOx film on the electrical properties of Au/ZrOx/n-type Si/In devices",
abstract = "The ZrOx permittivity and leakage currents through Au/ZrO x/n-type Si/In structures are studied. The electrical conduction investigations suggest that the leakage behaviour is governed by the Schottky emission. The leakage current strongly depends on the O/Zr atomic concentration ratio of ZrOx films and an increase in the number of oxygen-vacancy-related defects may result in a decrease in the ZrOx permittivity, enhancing the leakage conduction of the Au/ZrOx/n-type Si/In devices. In addition, the discrepancy in the ZrOx permittivity determined in the current density-electric field and capacitance-voltage characteristics is attributed to the formation of the intermediate ZrSi xOy layer.",
author = "Chen, {Wei Chung} and Lin, {Yow Jon} and Chen, {Ya Hui} and Chang, {Hsing Cheng}",
year = "2010",
month = "4",
day = "28",
doi = "10.1088/0268-1242/25/5/055003",
language = "English",
volume = "25",
journal = "Semiconductor Science and Technology",
issn = "0268-1242",
publisher = "IOP Publishing Ltd.",
number = "5",

}

Effects of oxygen deficiency in the sol-gel ZrOx film on the electrical properties of Au/ZrOx/n-type Si/In devices. / Chen, Wei Chung; Lin, Yow Jon; Chen, Ya Hui; Chang, Hsing Cheng.

In: Semiconductor Science and Technology, Vol. 25, No. 5, 055003, 28.04.2010.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effects of oxygen deficiency in the sol-gel ZrOx film on the electrical properties of Au/ZrOx/n-type Si/In devices

AU - Chen, Wei Chung

AU - Lin, Yow Jon

AU - Chen, Ya Hui

AU - Chang, Hsing Cheng

PY - 2010/4/28

Y1 - 2010/4/28

N2 - The ZrOx permittivity and leakage currents through Au/ZrO x/n-type Si/In structures are studied. The electrical conduction investigations suggest that the leakage behaviour is governed by the Schottky emission. The leakage current strongly depends on the O/Zr atomic concentration ratio of ZrOx films and an increase in the number of oxygen-vacancy-related defects may result in a decrease in the ZrOx permittivity, enhancing the leakage conduction of the Au/ZrOx/n-type Si/In devices. In addition, the discrepancy in the ZrOx permittivity determined in the current density-electric field and capacitance-voltage characteristics is attributed to the formation of the intermediate ZrSi xOy layer.

AB - The ZrOx permittivity and leakage currents through Au/ZrO x/n-type Si/In structures are studied. The electrical conduction investigations suggest that the leakage behaviour is governed by the Schottky emission. The leakage current strongly depends on the O/Zr atomic concentration ratio of ZrOx films and an increase in the number of oxygen-vacancy-related defects may result in a decrease in the ZrOx permittivity, enhancing the leakage conduction of the Au/ZrOx/n-type Si/In devices. In addition, the discrepancy in the ZrOx permittivity determined in the current density-electric field and capacitance-voltage characteristics is attributed to the formation of the intermediate ZrSi xOy layer.

UR - http://www.scopus.com/inward/record.url?scp=77951220210&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=77951220210&partnerID=8YFLogxK

U2 - 10.1088/0268-1242/25/5/055003

DO - 10.1088/0268-1242/25/5/055003

M3 - Article

VL - 25

JO - Semiconductor Science and Technology

JF - Semiconductor Science and Technology

SN - 0268-1242

IS - 5

M1 - 055003

ER -