Effects of oxygen deficiency in the sol-gel ZrOx film on the electrical properties of Au/ZrOx/n-type Si/In devices

Wei Chung Chen, Yow Jon Lin, Ya Hui Chen, Hsing Cheng Chang

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The ZrOx permittivity and leakage currents through Au/ZrO x/n-type Si/In structures are studied. The electrical conduction investigations suggest that the leakage behaviour is governed by the Schottky emission. The leakage current strongly depends on the O/Zr atomic concentration ratio of ZrOx films and an increase in the number of oxygen-vacancy-related defects may result in a decrease in the ZrOx permittivity, enhancing the leakage conduction of the Au/ZrOx/n-type Si/In devices. In addition, the discrepancy in the ZrOx permittivity determined in the current density-electric field and capacitance-voltage characteristics is attributed to the formation of the intermediate ZrSi xOy layer.

Original languageEnglish
Article number055003
JournalSemiconductor Science and Technology
Volume25
Issue number5
DOIs
Publication statusPublished - 2010 Apr 28

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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