Effects of N2O fluence on the PECVD-grown Si-rich SiO x with buried Si nanocrystals

Chun Jung Lin, Hao Chung Kuo, Chia Yang Chen, Yu Lun Chueh, Li Jen Chou, Chih-Wei Chang, Eric Wei Guang Diau, Gong Ru Lin

Research output: Contribution to journalConference article

Abstract

The optimized N2O fluence is demonstrated for plasma enhanced chemical vapor deposition (PECVD) of Si-rich substoichiometric silicon oxide (SiOx) films with buried Si nanocrystals. Strong room-temperature photoluminescence (PL) at 550-870 nm has been observed in SiOx films grown by PECVD under a constant SiH4 fluence of 20 seem with an N2O fluence varying from 105 seem to 130 seem. A 22-nm-redshift in the central PL wavelength has been detected after annealing from 15 min to 180 min. The maximum PL irradiance is observed from the SiOx film grown at the optimal N2O fluence of 120 seem after annealing for 30 minutes. Larger N2O fluence or longer annealing time leads to a PL band that is blue-shifted by 65 nm and 20 nm, respectively. Such a blue shift is attributed to shrinkage in the size of the Si nanocrystals with the participation of oxygen atoms from N2O incorporated within the SiOx matrix. The (220)-oriented Si nanocrystals exhibit radii ranging from 4.4 nm to 5.0 nm as determined by transmission electron microscopy (TEM). The luminescent lifetime lengthens to 52 (is as the nc-Si size increase to > 4 nm. Optimal annealing times for SiOx films prepared at different N2O fluences are also reported. A longer annealing process results in a stronger oxidation effect in SiOx films prepared at higher N2O fluences, yielding a lower PL irradiance at shorter wavelengths. In contrast, larger Si nanocrystals can be precipitated when the N2O fluence becomes lower; however, such a SiOx film usually exhibits weaker PL at longer wavelength due to a lower nc-Si density. These results indicate that a N2O/SiH4 fluence ratio of 6:1 is the optimized PECVD growth condition for the Si-rich SiO2 wherein dense Si nanocrystals are obtained after annealing.

Original languageEnglish
Article numberA19.11
Pages (from-to)319-324
Number of pages6
JournalMaterials Research Society Symposium Proceedings
Volume862
Publication statusPublished - 2005 Dec 1
Event2005 Materials Research Society Spring Meeting - San Francisco, CA, United States
Duration: 2005 Mar 282005 Apr 1

Fingerprint

Silicon oxides
Plasma enhanced chemical vapor deposition
Nanocrystals
nanocrystals
fluence
silicon oxides
Oxide films
vapor deposition
Photoluminescence
Annealing
oxide films
photoluminescence
annealing
Wavelength
irradiance
wavelengths
shrinkage
blue shift
Oxygen
Transmission electron microscopy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Lin, C. J., Kuo, H. C., Chen, C. Y., Chueh, Y. L., Chou, L. J., Chang, C-W., ... Lin, G. R. (2005). Effects of N2O fluence on the PECVD-grown Si-rich SiO x with buried Si nanocrystals. Materials Research Society Symposium Proceedings, 862, 319-324. [A19.11].
Lin, Chun Jung ; Kuo, Hao Chung ; Chen, Chia Yang ; Chueh, Yu Lun ; Chou, Li Jen ; Chang, Chih-Wei ; Diau, Eric Wei Guang ; Lin, Gong Ru. / Effects of N2O fluence on the PECVD-grown Si-rich SiO x with buried Si nanocrystals. In: Materials Research Society Symposium Proceedings. 2005 ; Vol. 862. pp. 319-324.
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abstract = "The optimized N2O fluence is demonstrated for plasma enhanced chemical vapor deposition (PECVD) of Si-rich substoichiometric silicon oxide (SiOx) films with buried Si nanocrystals. Strong room-temperature photoluminescence (PL) at 550-870 nm has been observed in SiOx films grown by PECVD under a constant SiH4 fluence of 20 seem with an N2O fluence varying from 105 seem to 130 seem. A 22-nm-redshift in the central PL wavelength has been detected after annealing from 15 min to 180 min. The maximum PL irradiance is observed from the SiOx film grown at the optimal N2O fluence of 120 seem after annealing for 30 minutes. Larger N2O fluence or longer annealing time leads to a PL band that is blue-shifted by 65 nm and 20 nm, respectively. Such a blue shift is attributed to shrinkage in the size of the Si nanocrystals with the participation of oxygen atoms from N2O incorporated within the SiOx matrix. The (220)-oriented Si nanocrystals exhibit radii ranging from 4.4 nm to 5.0 nm as determined by transmission electron microscopy (TEM). The luminescent lifetime lengthens to 52 (is as the nc-Si size increase to > 4 nm. Optimal annealing times for SiOx films prepared at different N2O fluences are also reported. A longer annealing process results in a stronger oxidation effect in SiOx films prepared at higher N2O fluences, yielding a lower PL irradiance at shorter wavelengths. In contrast, larger Si nanocrystals can be precipitated when the N2O fluence becomes lower; however, such a SiOx film usually exhibits weaker PL at longer wavelength due to a lower nc-Si density. These results indicate that a N2O/SiH4 fluence ratio of 6:1 is the optimized PECVD growth condition for the Si-rich SiO2 wherein dense Si nanocrystals are obtained after annealing.",
author = "Lin, {Chun Jung} and Kuo, {Hao Chung} and Chen, {Chia Yang} and Chueh, {Yu Lun} and Chou, {Li Jen} and Chih-Wei Chang and Diau, {Eric Wei Guang} and Lin, {Gong Ru}",
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Lin, CJ, Kuo, HC, Chen, CY, Chueh, YL, Chou, LJ, Chang, C-W, Diau, EWG & Lin, GR 2005, 'Effects of N2O fluence on the PECVD-grown Si-rich SiO x with buried Si nanocrystals', Materials Research Society Symposium Proceedings, vol. 862, A19.11, pp. 319-324.

Effects of N2O fluence on the PECVD-grown Si-rich SiO x with buried Si nanocrystals. / Lin, Chun Jung; Kuo, Hao Chung; Chen, Chia Yang; Chueh, Yu Lun; Chou, Li Jen; Chang, Chih-Wei; Diau, Eric Wei Guang; Lin, Gong Ru.

In: Materials Research Society Symposium Proceedings, Vol. 862, A19.11, 01.12.2005, p. 319-324.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Effects of N2O fluence on the PECVD-grown Si-rich SiO x with buried Si nanocrystals

AU - Lin, Chun Jung

AU - Kuo, Hao Chung

AU - Chen, Chia Yang

AU - Chueh, Yu Lun

AU - Chou, Li Jen

AU - Chang, Chih-Wei

AU - Diau, Eric Wei Guang

AU - Lin, Gong Ru

PY - 2005/12/1

Y1 - 2005/12/1

N2 - The optimized N2O fluence is demonstrated for plasma enhanced chemical vapor deposition (PECVD) of Si-rich substoichiometric silicon oxide (SiOx) films with buried Si nanocrystals. Strong room-temperature photoluminescence (PL) at 550-870 nm has been observed in SiOx films grown by PECVD under a constant SiH4 fluence of 20 seem with an N2O fluence varying from 105 seem to 130 seem. A 22-nm-redshift in the central PL wavelength has been detected after annealing from 15 min to 180 min. The maximum PL irradiance is observed from the SiOx film grown at the optimal N2O fluence of 120 seem after annealing for 30 minutes. Larger N2O fluence or longer annealing time leads to a PL band that is blue-shifted by 65 nm and 20 nm, respectively. Such a blue shift is attributed to shrinkage in the size of the Si nanocrystals with the participation of oxygen atoms from N2O incorporated within the SiOx matrix. The (220)-oriented Si nanocrystals exhibit radii ranging from 4.4 nm to 5.0 nm as determined by transmission electron microscopy (TEM). The luminescent lifetime lengthens to 52 (is as the nc-Si size increase to > 4 nm. Optimal annealing times for SiOx films prepared at different N2O fluences are also reported. A longer annealing process results in a stronger oxidation effect in SiOx films prepared at higher N2O fluences, yielding a lower PL irradiance at shorter wavelengths. In contrast, larger Si nanocrystals can be precipitated when the N2O fluence becomes lower; however, such a SiOx film usually exhibits weaker PL at longer wavelength due to a lower nc-Si density. These results indicate that a N2O/SiH4 fluence ratio of 6:1 is the optimized PECVD growth condition for the Si-rich SiO2 wherein dense Si nanocrystals are obtained after annealing.

AB - The optimized N2O fluence is demonstrated for plasma enhanced chemical vapor deposition (PECVD) of Si-rich substoichiometric silicon oxide (SiOx) films with buried Si nanocrystals. Strong room-temperature photoluminescence (PL) at 550-870 nm has been observed in SiOx films grown by PECVD under a constant SiH4 fluence of 20 seem with an N2O fluence varying from 105 seem to 130 seem. A 22-nm-redshift in the central PL wavelength has been detected after annealing from 15 min to 180 min. The maximum PL irradiance is observed from the SiOx film grown at the optimal N2O fluence of 120 seem after annealing for 30 minutes. Larger N2O fluence or longer annealing time leads to a PL band that is blue-shifted by 65 nm and 20 nm, respectively. Such a blue shift is attributed to shrinkage in the size of the Si nanocrystals with the participation of oxygen atoms from N2O incorporated within the SiOx matrix. The (220)-oriented Si nanocrystals exhibit radii ranging from 4.4 nm to 5.0 nm as determined by transmission electron microscopy (TEM). The luminescent lifetime lengthens to 52 (is as the nc-Si size increase to > 4 nm. Optimal annealing times for SiOx films prepared at different N2O fluences are also reported. A longer annealing process results in a stronger oxidation effect in SiOx films prepared at higher N2O fluences, yielding a lower PL irradiance at shorter wavelengths. In contrast, larger Si nanocrystals can be precipitated when the N2O fluence becomes lower; however, such a SiOx film usually exhibits weaker PL at longer wavelength due to a lower nc-Si density. These results indicate that a N2O/SiH4 fluence ratio of 6:1 is the optimized PECVD growth condition for the Si-rich SiO2 wherein dense Si nanocrystals are obtained after annealing.

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M3 - Conference article

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EP - 324

JO - Materials Research Society Symposium - Proceedings

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