Effects of nitrogen plasma treatment on the electrical property and band structure of few-layer MoS2

Ting Hong Su, Yow-Jon Lin

Research output: Contribution to journalArticle

13 Citations (Scopus)


Few-layer MoS2 prepared by the chemical vapor deposition method was treated with nitrogen plasma under different radio-frequency (rf) power conditions in order to experimentally study the change in the electrical property. Control of the rf power could change the work function of MoS2 from 5.40 eV to 5.06 eV. It is shown that the increased rf power leads to the increased (reduced) number of nitrogen (oxygen) atoms, increasing the electron concentration and shifting the Fermi level toward conduction band. The sensitivity of the work function to the rf power provides an opportunity to tune the work function of MoS2.

Original languageEnglish
Article number033103
JournalApplied Physics Letters
Issue number3
Publication statusPublished - 2016 Jan 18


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this