Abstract
Few-layer MoS2 prepared by the chemical vapor deposition method was treated with nitrogen plasma under different radio-frequency (rf) power conditions in order to experimentally study the change in the electrical property. Control of the rf power could change the work function of MoS2 from 5.40 eV to 5.06 eV. It is shown that the increased rf power leads to the increased (reduced) number of nitrogen (oxygen) atoms, increasing the electron concentration and shifting the Fermi level toward conduction band. The sensitivity of the work function to the rf power provides an opportunity to tune the work function of MoS2.
Original language | English |
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Article number | 033103 |
Journal | Applied Physics Letters |
Volume | 108 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2016 Jan 18 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
Cite this
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Effects of nitrogen plasma treatment on the electrical property and band structure of few-layer MoS2. / Su, Ting Hong; Lin, Yow-Jon.
In: Applied Physics Letters, Vol. 108, No. 3, 033103, 18.01.2016.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effects of nitrogen plasma treatment on the electrical property and band structure of few-layer MoS2
AU - Su, Ting Hong
AU - Lin, Yow-Jon
PY - 2016/1/18
Y1 - 2016/1/18
N2 - Few-layer MoS2 prepared by the chemical vapor deposition method was treated with nitrogen plasma under different radio-frequency (rf) power conditions in order to experimentally study the change in the electrical property. Control of the rf power could change the work function of MoS2 from 5.40 eV to 5.06 eV. It is shown that the increased rf power leads to the increased (reduced) number of nitrogen (oxygen) atoms, increasing the electron concentration and shifting the Fermi level toward conduction band. The sensitivity of the work function to the rf power provides an opportunity to tune the work function of MoS2.
AB - Few-layer MoS2 prepared by the chemical vapor deposition method was treated with nitrogen plasma under different radio-frequency (rf) power conditions in order to experimentally study the change in the electrical property. Control of the rf power could change the work function of MoS2 from 5.40 eV to 5.06 eV. It is shown that the increased rf power leads to the increased (reduced) number of nitrogen (oxygen) atoms, increasing the electron concentration and shifting the Fermi level toward conduction band. The sensitivity of the work function to the rf power provides an opportunity to tune the work function of MoS2.
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U2 - 10.1063/1.4939978
DO - 10.1063/1.4939978
M3 - Article
AN - SCOPUS:84955477256
VL - 108
JO - Applied Physics Letters
JF - Applied Physics Letters
SN - 0003-6951
IS - 3
M1 - 033103
ER -