Effects of (NH4)2Sx treatment on electrical properties of indium tin oxide/poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate)

Yow-Jon Lin, Hsing Cheng Chang, Bei Yuan Liu

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

The effects of (N H4) 2 Sx treatment on the current-voltage characteristics and interfacial properties of the indium tin oxide (ITO)/poly(3,4- ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT-PSS) samples have been investigated in this study. The authors found that (N H4) 2 Sx treatment could lead to the improvement of the interfacial stability of ITO/PEDOT-PSS samples. In addition, the current transport at the ITO/PEDOT-PSS interface is governed by the defects induced by interfacial reactions.

Original languageEnglish
Article number112112
JournalApplied Physics Letters
Volume90
Issue number11
DOIs
Publication statusPublished - 2007 Mar 23

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indium oxides
tin oxides
electrical properties
ITO (semiconductors)
defects
electric potential

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{5da0ee0049cd4ea5ab1c66c3f628745a,
title = "Effects of (NH4)2Sx treatment on electrical properties of indium tin oxide/poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate)",
abstract = "The effects of (N H4) 2 Sx treatment on the current-voltage characteristics and interfacial properties of the indium tin oxide (ITO)/poly(3,4- ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT-PSS) samples have been investigated in this study. The authors found that (N H4) 2 Sx treatment could lead to the improvement of the interfacial stability of ITO/PEDOT-PSS samples. In addition, the current transport at the ITO/PEDOT-PSS interface is governed by the defects induced by interfacial reactions.",
author = "Yow-Jon Lin and Chang, {Hsing Cheng} and Liu, {Bei Yuan}",
year = "2007",
month = "3",
day = "23",
doi = "10.1063/1.2714290",
language = "English",
volume = "90",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "11",

}

Effects of (NH4)2Sx treatment on electrical properties of indium tin oxide/poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate). / Lin, Yow-Jon; Chang, Hsing Cheng; Liu, Bei Yuan.

In: Applied Physics Letters, Vol. 90, No. 11, 112112, 23.03.2007.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effects of (NH4)2Sx treatment on electrical properties of indium tin oxide/poly(3,4-ethylenedioxythiophene) doped with poly(4-styrenesulfonate)

AU - Lin, Yow-Jon

AU - Chang, Hsing Cheng

AU - Liu, Bei Yuan

PY - 2007/3/23

Y1 - 2007/3/23

N2 - The effects of (N H4) 2 Sx treatment on the current-voltage characteristics and interfacial properties of the indium tin oxide (ITO)/poly(3,4- ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT-PSS) samples have been investigated in this study. The authors found that (N H4) 2 Sx treatment could lead to the improvement of the interfacial stability of ITO/PEDOT-PSS samples. In addition, the current transport at the ITO/PEDOT-PSS interface is governed by the defects induced by interfacial reactions.

AB - The effects of (N H4) 2 Sx treatment on the current-voltage characteristics and interfacial properties of the indium tin oxide (ITO)/poly(3,4- ethylenedioxythiophene) doped with poly(4-styrenesulfonate) (PEDOT-PSS) samples have been investigated in this study. The authors found that (N H4) 2 Sx treatment could lead to the improvement of the interfacial stability of ITO/PEDOT-PSS samples. In addition, the current transport at the ITO/PEDOT-PSS interface is governed by the defects induced by interfacial reactions.

UR - http://www.scopus.com/inward/record.url?scp=33947323565&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=33947323565&partnerID=8YFLogxK

U2 - 10.1063/1.2714290

DO - 10.1063/1.2714290

M3 - Article

AN - SCOPUS:33947323565

VL - 90

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 11

M1 - 112112

ER -