Effects of (NH 4 )2S x treatment on the surface properties of SiO 2 as a gate dielectric for pentacene thin-film transistor applications

Cheng Chun Hung, Yow-Jon Lin

Research output: Contribution to journalArticle

Abstract

The effect of (NH 4 ) 2 S x treatment on the surface properties of SiO 2 is studied. (NH 4 ) 2 S x treatment leads to the formation of S-Si bonds on the SiO 2 surface that serves to reduce the number of donor-like trap states, inducing the shift of the Fermi level toward the conduction band minimum. A finding in this case is the noticeably reduced value of the SiO 2 capacitance as the sulfurated layer is formed at the SiO 2 surface. The effect of SiO 2 layers with (NH 4 ) 2 S x treatment on the carrier transport behaviors for the pentacene/SiO 2 -based organic thin-film transistor (OTFT) is also studied. The pentacene/as-cleaned SiO 2 -based OTFT shows depletion-mode behavior, whereas the pentacene/(NH 4 ) 2 S x -treated SiO 2 -based OTFT exhibits enhancement-mode behavior. Experimental identification confirms that the depletion-/enhancement-mode conversion is due to the dominance competition between donor-like trap states in SiO 2 near the pentacene/SiO 2 interface and acceptor-like trap states in the pentacene channel. A sulfurated layer between pentacene and SiO 2 is expected to give significant contributions to carrier transport for pentacene/SiO 2 -based OTFTs.

Original languageEnglish
Article number015101
JournalMaterials Research Express
Volume5
Issue number1
DOIs
Publication statusPublished - 2018 Jan 1

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Gate dielectrics
Thin film transistors
Surface properties
Carrier transport
Fermi level
Conduction bands
Capacitance
pentacene

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Biomaterials
  • Surfaces, Coatings and Films
  • Polymers and Plastics
  • Metals and Alloys

Cite this

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title = "Effects of (NH 4 )2S x treatment on the surface properties of SiO 2 as a gate dielectric for pentacene thin-film transistor applications",
abstract = "The effect of (NH 4 ) 2 S x treatment on the surface properties of SiO 2 is studied. (NH 4 ) 2 S x treatment leads to the formation of S-Si bonds on the SiO 2 surface that serves to reduce the number of donor-like trap states, inducing the shift of the Fermi level toward the conduction band minimum. A finding in this case is the noticeably reduced value of the SiO 2 capacitance as the sulfurated layer is formed at the SiO 2 surface. The effect of SiO 2 layers with (NH 4 ) 2 S x treatment on the carrier transport behaviors for the pentacene/SiO 2 -based organic thin-film transistor (OTFT) is also studied. The pentacene/as-cleaned SiO 2 -based OTFT shows depletion-mode behavior, whereas the pentacene/(NH 4 ) 2 S x -treated SiO 2 -based OTFT exhibits enhancement-mode behavior. Experimental identification confirms that the depletion-/enhancement-mode conversion is due to the dominance competition between donor-like trap states in SiO 2 near the pentacene/SiO 2 interface and acceptor-like trap states in the pentacene channel. A sulfurated layer between pentacene and SiO 2 is expected to give significant contributions to carrier transport for pentacene/SiO 2 -based OTFTs.",
author = "Hung, {Cheng Chun} and Yow-Jon Lin",
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language = "English",
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N2 - The effect of (NH 4 ) 2 S x treatment on the surface properties of SiO 2 is studied. (NH 4 ) 2 S x treatment leads to the formation of S-Si bonds on the SiO 2 surface that serves to reduce the number of donor-like trap states, inducing the shift of the Fermi level toward the conduction band minimum. A finding in this case is the noticeably reduced value of the SiO 2 capacitance as the sulfurated layer is formed at the SiO 2 surface. The effect of SiO 2 layers with (NH 4 ) 2 S x treatment on the carrier transport behaviors for the pentacene/SiO 2 -based organic thin-film transistor (OTFT) is also studied. The pentacene/as-cleaned SiO 2 -based OTFT shows depletion-mode behavior, whereas the pentacene/(NH 4 ) 2 S x -treated SiO 2 -based OTFT exhibits enhancement-mode behavior. Experimental identification confirms that the depletion-/enhancement-mode conversion is due to the dominance competition between donor-like trap states in SiO 2 near the pentacene/SiO 2 interface and acceptor-like trap states in the pentacene channel. A sulfurated layer between pentacene and SiO 2 is expected to give significant contributions to carrier transport for pentacene/SiO 2 -based OTFTs.

AB - The effect of (NH 4 ) 2 S x treatment on the surface properties of SiO 2 is studied. (NH 4 ) 2 S x treatment leads to the formation of S-Si bonds on the SiO 2 surface that serves to reduce the number of donor-like trap states, inducing the shift of the Fermi level toward the conduction band minimum. A finding in this case is the noticeably reduced value of the SiO 2 capacitance as the sulfurated layer is formed at the SiO 2 surface. The effect of SiO 2 layers with (NH 4 ) 2 S x treatment on the carrier transport behaviors for the pentacene/SiO 2 -based organic thin-film transistor (OTFT) is also studied. The pentacene/as-cleaned SiO 2 -based OTFT shows depletion-mode behavior, whereas the pentacene/(NH 4 ) 2 S x -treated SiO 2 -based OTFT exhibits enhancement-mode behavior. Experimental identification confirms that the depletion-/enhancement-mode conversion is due to the dominance competition between donor-like trap states in SiO 2 near the pentacene/SiO 2 interface and acceptor-like trap states in the pentacene channel. A sulfurated layer between pentacene and SiO 2 is expected to give significant contributions to carrier transport for pentacene/SiO 2 -based OTFTs.

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