Effects of Na content on the luminescence behavior, conduction type, and crystal structure of Na-doped ZnO films

Jian Jhong Lai, Yow Jon Lin, Ya Hui Chen, Hsing Cheng Chang, Chia Jyi Liu, Yi Yan Zou, Yu Tai Shih, Meng Chieh Wang

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

This study investigates the effect of Na content on the structural, optical, and electrical properties of sol-gel Na-doped ZnO films using x-ray diffraction, photoluminescence, and conductivity measurements. It is shown that a p-type conversion of the Na-doped ZnO film might be due to a combined effect of the increased substitutional-Na density and the decreased oxygen-vacancy (VO) density. However, excess Na incorporation into ZnO shows an ambiguous carrier type due to the increase in the donorlike VO density. These results indicate that compensation effects limit the hole concentration in the Na-doped ZnO films. In addition, when more Na is substituted into the ZnO system, the difference in the ionic radii of Zn 2 and Na+ starts playing an increasingly important role, causing the presence of tensile stress in the Na-doped ZnO film.

Original languageEnglish
Article number013704
JournalJournal of Applied Physics
Volume110
Issue number1
DOIs
Publication statusPublished - 2011 Jul 1

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luminescence
conduction
crystal structure
tensile stress
x ray diffraction
electrical properties
gels
photoluminescence
optical properties
conductivity
radii
oxygen

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

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abstract = "This study investigates the effect of Na content on the structural, optical, and electrical properties of sol-gel Na-doped ZnO films using x-ray diffraction, photoluminescence, and conductivity measurements. It is shown that a p-type conversion of the Na-doped ZnO film might be due to a combined effect of the increased substitutional-Na density and the decreased oxygen-vacancy (VO) density. However, excess Na incorporation into ZnO shows an ambiguous carrier type due to the increase in the donorlike VO density. These results indicate that compensation effects limit the hole concentration in the Na-doped ZnO films. In addition, when more Na is substituted into the ZnO system, the difference in the ionic radii of Zn 2 and Na+ starts playing an increasingly important role, causing the presence of tensile stress in the Na-doped ZnO film.",
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Effects of Na content on the luminescence behavior, conduction type, and crystal structure of Na-doped ZnO films. / Lai, Jian Jhong; Lin, Yow Jon; Chen, Ya Hui; Chang, Hsing Cheng; Liu, Chia Jyi; Zou, Yi Yan; Shih, Yu Tai; Wang, Meng Chieh.

In: Journal of Applied Physics, Vol. 110, No. 1, 013704, 01.07.2011.

Research output: Contribution to journalArticle

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AU - Shih, Yu Tai

AU - Wang, Meng Chieh

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