Effects of Mg incorporation on the optical properties of ZnO prepared by the sol-gel method

Yow Jon Lin; Ping Hsun Wu; Chia Lung Tsai; Chia Jyi Liu; Zhi Ru Lin; Hsing Cheng Chang; Ching Ting Lee

doi:10.1063/1.2939255

Effects of Mg incorporation on the optical properties of ZnO prepared by the sol-gel method

Yow Jon Lin, Ping Hsun Wu, Chia Lung Tsai, Chia Jyi Liu, Zhi Ru Lin, Hsing Cheng Chang, Ching Ting Lee

Research output: Contribution to journal › Article

33 Citations (Scopus)

Abstract

ZnO films with and without Mg doping (Zn_1-xMg_xO) were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, photoluminescence, and conductivity measurements were used to characterize the Zn_1-xMg_xO semiconductors. It is worth noting that the intensity of the band-edge luminescence (BEL) of the Zn_0.973 Mg_0.027 O film at room temperature was nearly six times the ZnO film. The enhanced BEL intensity has been attributed to the suppression of capacitance variation related to trapping/detrapping of charges, a decrease in the number of nonradiative recombination defects, and an increase in the nonradiative recombination lifetime.

Original language	English
Article number	113709
Journal	Journal of Applied Physics
Volume	103
Issue number	11
DOIs	https://doi.org/10.1063/1.2939255
Publication status	Published - 2008 Jun 20

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

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Lin, Y. J., Wu, P. H., Tsai, C. L., Liu, C. J., Lin, Z. R., Chang, H. C., & Lee, C. T. (2008). Effects of Mg incorporation on the optical properties of ZnO prepared by the sol-gel method. Journal of Applied Physics, 103(11), [113709]. https://doi.org/10.1063/1.2939255

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abstract = "ZnO films with and without Mg doping (Zn1-xMgxO) were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, photoluminescence, and conductivity measurements were used to characterize the Zn1-xMgxO semiconductors. It is worth noting that the intensity of the band-edge luminescence (BEL) of the Zn0.973 Mg0.027 O film at room temperature was nearly six times the ZnO film. The enhanced BEL intensity has been attributed to the suppression of capacitance variation related to trapping/detrapping of charges, a decrease in the number of nonradiative recombination defects, and an increase in the nonradiative recombination lifetime.",

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AU - Lin, Yow Jon

AU - Wu, Ping Hsun

AU - Tsai, Chia Lung

AU - Liu, Chia Jyi

AU - Lin, Zhi Ru

AU - Chang, Hsing Cheng

AU - Lee, Ching Ting

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AB - ZnO films with and without Mg doping (Zn1-xMgxO) were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, photoluminescence, and conductivity measurements were used to characterize the Zn1-xMgxO semiconductors. It is worth noting that the intensity of the band-edge luminescence (BEL) of the Zn0.973 Mg0.027 O film at room temperature was nearly six times the ZnO film. The enhanced BEL intensity has been attributed to the suppression of capacitance variation related to trapping/detrapping of charges, a decrease in the number of nonradiative recombination defects, and an increase in the nonradiative recombination lifetime.

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