Effects of Mg incorporation on the optical properties of ZnO prepared by the sol-gel method

Yow Jon Lin; Ping Hsun Wu; Chia Lung Tsai; Chia Jyi Liu; Zhi Ru Lin; Hsing Cheng Chang; Ching Ting Lee

doi:10.1063/1.2939255

Effects of Mg incorporation on the optical properties of ZnO prepared by the sol-gel method

Yow Jon Lin, Ping Hsun Wu, Chia Lung Tsai, Chia Jyi Liu, Zhi Ru Lin, Hsing Cheng Chang, Ching Ting Lee

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Abstract

ZnO films with and without Mg doping (Zn_1-xMg_xO) were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, photoluminescence, and conductivity measurements were used to characterize the Zn_1-xMg_xO semiconductors. It is worth noting that the intensity of the band-edge luminescence (BEL) of the Zn_0.973 Mg_0.027 O film at room temperature was nearly six times the ZnO film. The enhanced BEL intensity has been attributed to the suppression of capacitance variation related to trapping/detrapping of charges, a decrease in the number of nonradiative recombination defects, and an increase in the nonradiative recombination lifetime.

Original language	English
Article number	113709
Journal	Journal of Applied Physics
Volume	103
Issue number	11
DOIs	https://doi.org/10.1063/1.2939255
Publication status	Published - 2008 Jun 20

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All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Cite this

Lin, Y. J., Wu, P. H., Tsai, C. L., Liu, C. J., Lin, Z. R., Chang, H. C., & Lee, C. T. (2008). Effects of Mg incorporation on the optical properties of ZnO prepared by the sol-gel method. Journal of Applied Physics, 103(11), [113709]. https://doi.org/10.1063/1.2939255

@article{cec842400feb4ac6867c89fb3d5e255f,

title = "Effects of Mg incorporation on the optical properties of ZnO prepared by the sol-gel method",

abstract = "ZnO films with and without Mg doping (Zn1-xMgxO) were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, photoluminescence, and conductivity measurements were used to characterize the Zn1-xMgxO semiconductors. It is worth noting that the intensity of the band-edge luminescence (BEL) of the Zn0.973 Mg0.027 O film at room temperature was nearly six times the ZnO film. The enhanced BEL intensity has been attributed to the suppression of capacitance variation related to trapping/detrapping of charges, a decrease in the number of nonradiative recombination defects, and an increase in the nonradiative recombination lifetime.",

author = "Lin, {Yow Jon} and Wu, {Ping Hsun} and Tsai, {Chia Lung} and Liu, {Chia Jyi} and Lin, {Zhi Ru} and Chang, {Hsing Cheng} and Lee, {Ching Ting}",

year = "2008",

month = jun

day = "20",

doi = "10.1063/1.2939255",

language = "English",

volume = "103",

journal = "Journal of Applied Physics",

issn = "0021-8979",

publisher = "American Institute of Physics Publising LLC",

number = "11",

}

TY - JOUR

T1 - Effects of Mg incorporation on the optical properties of ZnO prepared by the sol-gel method

AU - Lin, Yow Jon

AU - Wu, Ping Hsun

AU - Tsai, Chia Lung

AU - Liu, Chia Jyi

AU - Lin, Zhi Ru

AU - Chang, Hsing Cheng

AU - Lee, Ching Ting

PY - 2008/6/20

Y1 - 2008/6/20

N2 - ZnO films with and without Mg doping (Zn1-xMgxO) were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, photoluminescence, and conductivity measurements were used to characterize the Zn1-xMgxO semiconductors. It is worth noting that the intensity of the band-edge luminescence (BEL) of the Zn0.973 Mg0.027 O film at room temperature was nearly six times the ZnO film. The enhanced BEL intensity has been attributed to the suppression of capacitance variation related to trapping/detrapping of charges, a decrease in the number of nonradiative recombination defects, and an increase in the nonradiative recombination lifetime.

AB - ZnO films with and without Mg doping (Zn1-xMgxO) were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, photoluminescence, and conductivity measurements were used to characterize the Zn1-xMgxO semiconductors. It is worth noting that the intensity of the band-edge luminescence (BEL) of the Zn0.973 Mg0.027 O film at room temperature was nearly six times the ZnO film. The enhanced BEL intensity has been attributed to the suppression of capacitance variation related to trapping/detrapping of charges, a decrease in the number of nonradiative recombination defects, and an increase in the nonradiative recombination lifetime.

UR - http://www.scopus.com/inward/record.url?scp=45149089650&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=45149089650&partnerID=8YFLogxK

U2 - 10.1063/1.2939255

DO - 10.1063/1.2939255

M3 - Article

AN - SCOPUS:45149089650

VL - 103

JO - Journal of Applied Physics

JF - Journal of Applied Physics

SN - 0021-8979

IS - 11

M1 - 113709

ER -

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