Effects of Mg incorporation on the optical properties of ZnO prepared by the sol-gel method

Yow Jon Lin, Ping Hsun Wu, Chia Lung Tsai, Chia Jyi Liu, Zhi Ru Lin, Hsing Cheng Chang, Ching Ting Lee

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

ZnO films with and without Mg doping (Zn1-xMgxO) were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, photoluminescence, and conductivity measurements were used to characterize the Zn1-xMgxO semiconductors. It is worth noting that the intensity of the band-edge luminescence (BEL) of the Zn0.973 Mg0.027 O film at room temperature was nearly six times the ZnO film. The enhanced BEL intensity has been attributed to the suppression of capacitance variation related to trapping/detrapping of charges, a decrease in the number of nonradiative recombination defects, and an increase in the nonradiative recombination lifetime.

Original languageEnglish
Article number113709
JournalJournal of Applied Physics
Volume103
Issue number11
DOIs
Publication statusPublished - 2008 Jun 20

Fingerprint

gels
optical properties
luminescence
x ray diffraction
capacitance
trapping
retarding
photoelectron spectroscopy
photoluminescence
life (durability)
conductivity
defects
room temperature
x rays

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Lin, Yow Jon ; Wu, Ping Hsun ; Tsai, Chia Lung ; Liu, Chia Jyi ; Lin, Zhi Ru ; Chang, Hsing Cheng ; Lee, Ching Ting. / Effects of Mg incorporation on the optical properties of ZnO prepared by the sol-gel method. In: Journal of Applied Physics. 2008 ; Vol. 103, No. 11.
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Effects of Mg incorporation on the optical properties of ZnO prepared by the sol-gel method. / Lin, Yow Jon; Wu, Ping Hsun; Tsai, Chia Lung; Liu, Chia Jyi; Lin, Zhi Ru; Chang, Hsing Cheng; Lee, Ching Ting.

In: Journal of Applied Physics, Vol. 103, No. 11, 113709, 20.06.2008.

Research output: Contribution to journalArticle

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AU - Tsai, Chia Lung

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AU - Lin, Zhi Ru

AU - Chang, Hsing Cheng

AU - Lee, Ching Ting

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AB - ZnO films with and without Mg doping (Zn1-xMgxO) were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, photoluminescence, and conductivity measurements were used to characterize the Zn1-xMgxO semiconductors. It is worth noting that the intensity of the band-edge luminescence (BEL) of the Zn0.973 Mg0.027 O film at room temperature was nearly six times the ZnO film. The enhanced BEL intensity has been attributed to the suppression of capacitance variation related to trapping/detrapping of charges, a decrease in the number of nonradiative recombination defects, and an increase in the nonradiative recombination lifetime.

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