Abstract
ZnO films with and without Mg doping (Zn1-xMgxO) were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, photoluminescence, and conductivity measurements were used to characterize the Zn1-xMgxO semiconductors. It is worth noting that the intensity of the band-edge luminescence (BEL) of the Zn0.973 Mg0.027 O film at room temperature was nearly six times the ZnO film. The enhanced BEL intensity has been attributed to the suppression of capacitance variation related to trapping/detrapping of charges, a decrease in the number of nonradiative recombination defects, and an increase in the nonradiative recombination lifetime.
Original language | English |
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Article number | 113709 |
Journal | Journal of Applied Physics |
Volume | 103 |
Issue number | 11 |
DOIs | |
Publication status | Published - 2008 Jun 20 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Effects of Mg incorporation on the optical properties of ZnO prepared by the sol-gel method. / Lin, Yow Jon; Wu, Ping Hsun; Tsai, Chia Lung; Liu, Chia Jyi; Lin, Zhi Ru; Chang, Hsing Cheng; Lee, Ching Ting.
In: Journal of Applied Physics, Vol. 103, No. 11, 113709, 20.06.2008.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effects of Mg incorporation on the optical properties of ZnO prepared by the sol-gel method
AU - Lin, Yow Jon
AU - Wu, Ping Hsun
AU - Tsai, Chia Lung
AU - Liu, Chia Jyi
AU - Lin, Zhi Ru
AU - Chang, Hsing Cheng
AU - Lee, Ching Ting
PY - 2008/6/20
Y1 - 2008/6/20
N2 - ZnO films with and without Mg doping (Zn1-xMgxO) were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, photoluminescence, and conductivity measurements were used to characterize the Zn1-xMgxO semiconductors. It is worth noting that the intensity of the band-edge luminescence (BEL) of the Zn0.973 Mg0.027 O film at room temperature was nearly six times the ZnO film. The enhanced BEL intensity has been attributed to the suppression of capacitance variation related to trapping/detrapping of charges, a decrease in the number of nonradiative recombination defects, and an increase in the nonradiative recombination lifetime.
AB - ZnO films with and without Mg doping (Zn1-xMgxO) were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, photoluminescence, and conductivity measurements were used to characterize the Zn1-xMgxO semiconductors. It is worth noting that the intensity of the band-edge luminescence (BEL) of the Zn0.973 Mg0.027 O film at room temperature was nearly six times the ZnO film. The enhanced BEL intensity has been attributed to the suppression of capacitance variation related to trapping/detrapping of charges, a decrease in the number of nonradiative recombination defects, and an increase in the nonradiative recombination lifetime.
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U2 - 10.1063/1.2939255
DO - 10.1063/1.2939255
M3 - Article
AN - SCOPUS:45149089650
VL - 103
JO - Journal of Applied Physics
JF - Journal of Applied Physics
SN - 0021-8979
IS - 11
M1 - 113709
ER -