Effects of Mg incorporation on the optical properties of ZnO prepared by the sol-gel method

Yow Jon Lin, Ping Hsun Wu, Chia Lung Tsai, Chia Jyi Liu, Zhi Ru Lin, Hsing Cheng Chang, Ching Ting Lee

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Abstract

ZnO films with and without Mg doping (Zn1-xMgxO) were deposited on substrates by the sol-gel technique. X-ray photoelectron spectroscopy, x-ray diffraction, photoluminescence, and conductivity measurements were used to characterize the Zn1-xMgxO semiconductors. It is worth noting that the intensity of the band-edge luminescence (BEL) of the Zn0.973 Mg0.027 O film at room temperature was nearly six times the ZnO film. The enhanced BEL intensity has been attributed to the suppression of capacitance variation related to trapping/detrapping of charges, a decrease in the number of nonradiative recombination defects, and an increase in the nonradiative recombination lifetime.

Original languageEnglish
Article number113709
JournalJournal of Applied Physics
Volume103
Issue number11
DOIs
Publication statusPublished - 2008 Jun 20

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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