Effects of laser-induced recovery process on conductive property of SnO2:F thin films

Ming-Fei Chen, Keh Moh Lin, Yu Sen Ho

Research output: Contribution to journalArticle

28 Citations (Scopus)

Abstract

In this study, we developed a laser annealing process to enhance the electrical properties of SnO2:F (FTO) films. It is already known that in contrast to indium oxides or zinc oxides, the carrier mobility of FTO films is relatively lower. Thus, improving the mobility is a direct way to enhance the conductivity of FTO films. Furthermore, improving the crystal quality of the thin films is in turn a direct way to enhance the mobility effectively. Contrary to the high working temperatures of traditional annealing processes, the laser annealing process, with its focusing character, enables us to modify the crystal quality of oxide films on substrates with low-melting points. Using a self-built laser system, which consists of a Nd:YAG solid-state laser with a wavelength of 1064 nm and a beam shaper lens, we carried out a series of experiments to achieve the optimal laser annealing process. Hall, SEM, and XRD measurements were used to characterize the opto-electrical as well as the structural properties. As experimental results show, the tin oxide crystallites recovered well during the laser annealing process. By using a suitable beam profile and a proper laser intensity, the film resistivity was reduced from 7.19 ± 0.55 × 10-3 Ω cm to 6.70 ± 0.20 × 10-3 Ω cm while the carrier mobility was enhanced from 11.18 ± 0.29 cm2/V s to 11.71 ± 0.34 cm2/V s.

Original languageEnglish
Pages (from-to)127-131
Number of pages5
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume176
Issue number2
DOIs
Publication statusPublished - 2011 Feb 15

Fingerprint

laser annealing
recovery
Recovery
Thin films
Annealing
Lasers
thin films
carrier mobility
lasers
Carrier mobility
shapers
solid state lasers
zinc oxides
indium oxides
tin oxides
crystallites
crystals
Zinc Oxide
melting points
oxide films

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

@article{840d9a9c69514e098570d2f70e011570,
title = "Effects of laser-induced recovery process on conductive property of SnO2:F thin films",
abstract = "In this study, we developed a laser annealing process to enhance the electrical properties of SnO2:F (FTO) films. It is already known that in contrast to indium oxides or zinc oxides, the carrier mobility of FTO films is relatively lower. Thus, improving the mobility is a direct way to enhance the conductivity of FTO films. Furthermore, improving the crystal quality of the thin films is in turn a direct way to enhance the mobility effectively. Contrary to the high working temperatures of traditional annealing processes, the laser annealing process, with its focusing character, enables us to modify the crystal quality of oxide films on substrates with low-melting points. Using a self-built laser system, which consists of a Nd:YAG solid-state laser with a wavelength of 1064 nm and a beam shaper lens, we carried out a series of experiments to achieve the optimal laser annealing process. Hall, SEM, and XRD measurements were used to characterize the opto-electrical as well as the structural properties. As experimental results show, the tin oxide crystallites recovered well during the laser annealing process. By using a suitable beam profile and a proper laser intensity, the film resistivity was reduced from 7.19 ± 0.55 × 10-3 Ω cm to 6.70 ± 0.20 × 10-3 Ω cm while the carrier mobility was enhanced from 11.18 ± 0.29 cm2/V s to 11.71 ± 0.34 cm2/V s.",
author = "Ming-Fei Chen and Lin, {Keh Moh} and Ho, {Yu Sen}",
year = "2011",
month = "2",
day = "15",
doi = "10.1016/j.mseb.2010.10.011",
language = "English",
volume = "176",
pages = "127--131",
journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",
issn = "0921-5107",
publisher = "Elsevier BV",
number = "2",

}

Effects of laser-induced recovery process on conductive property of SnO2:F thin films. / Chen, Ming-Fei; Lin, Keh Moh; Ho, Yu Sen.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 176, No. 2, 15.02.2011, p. 127-131.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effects of laser-induced recovery process on conductive property of SnO2:F thin films

AU - Chen, Ming-Fei

AU - Lin, Keh Moh

AU - Ho, Yu Sen

PY - 2011/2/15

Y1 - 2011/2/15

N2 - In this study, we developed a laser annealing process to enhance the electrical properties of SnO2:F (FTO) films. It is already known that in contrast to indium oxides or zinc oxides, the carrier mobility of FTO films is relatively lower. Thus, improving the mobility is a direct way to enhance the conductivity of FTO films. Furthermore, improving the crystal quality of the thin films is in turn a direct way to enhance the mobility effectively. Contrary to the high working temperatures of traditional annealing processes, the laser annealing process, with its focusing character, enables us to modify the crystal quality of oxide films on substrates with low-melting points. Using a self-built laser system, which consists of a Nd:YAG solid-state laser with a wavelength of 1064 nm and a beam shaper lens, we carried out a series of experiments to achieve the optimal laser annealing process. Hall, SEM, and XRD measurements were used to characterize the opto-electrical as well as the structural properties. As experimental results show, the tin oxide crystallites recovered well during the laser annealing process. By using a suitable beam profile and a proper laser intensity, the film resistivity was reduced from 7.19 ± 0.55 × 10-3 Ω cm to 6.70 ± 0.20 × 10-3 Ω cm while the carrier mobility was enhanced from 11.18 ± 0.29 cm2/V s to 11.71 ± 0.34 cm2/V s.

AB - In this study, we developed a laser annealing process to enhance the electrical properties of SnO2:F (FTO) films. It is already known that in contrast to indium oxides or zinc oxides, the carrier mobility of FTO films is relatively lower. Thus, improving the mobility is a direct way to enhance the conductivity of FTO films. Furthermore, improving the crystal quality of the thin films is in turn a direct way to enhance the mobility effectively. Contrary to the high working temperatures of traditional annealing processes, the laser annealing process, with its focusing character, enables us to modify the crystal quality of oxide films on substrates with low-melting points. Using a self-built laser system, which consists of a Nd:YAG solid-state laser with a wavelength of 1064 nm and a beam shaper lens, we carried out a series of experiments to achieve the optimal laser annealing process. Hall, SEM, and XRD measurements were used to characterize the opto-electrical as well as the structural properties. As experimental results show, the tin oxide crystallites recovered well during the laser annealing process. By using a suitable beam profile and a proper laser intensity, the film resistivity was reduced from 7.19 ± 0.55 × 10-3 Ω cm to 6.70 ± 0.20 × 10-3 Ω cm while the carrier mobility was enhanced from 11.18 ± 0.29 cm2/V s to 11.71 ± 0.34 cm2/V s.

UR - http://www.scopus.com/inward/record.url?scp=78751581940&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=78751581940&partnerID=8YFLogxK

U2 - 10.1016/j.mseb.2010.10.011

DO - 10.1016/j.mseb.2010.10.011

M3 - Article

AN - SCOPUS:78751581940

VL - 176

SP - 127

EP - 131

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - 2

ER -