Effects of interface modification on electrical and optoelectronic properties of p-type CuAlO2/n-type Si heterojunction devices

Yow-Jon Lin, Gi Min Chang, Chang Lin Wu

Research output: Contribution to journalArticle

Abstract

The effect of interface modification on the electrical properties of heterojunction diodes based on the p-type CuAlO2 and n-type Si is investigated. Compared with the CuAlO2/Si device without H2O2 treatment, the CuAlO2/Si device with H2O2 treatment exhibits a better rectification behavior. The forward-bias current–voltage characteristics can be explained on the basis of the space charge limited current theory for CuAlO2/Si device without H2O2 treatment. However, the thermionic emission model is the dominant process in this fabricated CuAlO2/Si device with H2O2 treatment. The enhanced device performance is mainly the result of the formation of Si–O bonds that serves to reduce the number of interface states. The effect of H2O2 treatment on the sensitivity to solar irradiation and the response time for CuAlO2/Si devices is also studied. An increase in the values of photocurrent and photosensitivity is attributed to the rectification performance improvement that results from interface passivation.

Original languageEnglish
Pages (from-to)211-216
Number of pages6
JournalJournal of Materials Science: Materials in Electronics
Volume29
Issue number1
DOIs
Publication statusPublished - 2018 Jan 1

Fingerprint

heterojunction devices
Thermionic emission
Photosensitivity
Interface states
Photocurrents
Electric space charge
Passivation
Optoelectronic devices
Heterojunctions
Diodes
Electric properties
electrical properties
Irradiation
rectification
photosensitivity
thermionic emission
passivity
photocurrents
CuAlO(2)
heterojunctions

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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title = "Effects of interface modification on electrical and optoelectronic properties of p-type CuAlO2/n-type Si heterojunction devices",
abstract = "The effect of interface modification on the electrical properties of heterojunction diodes based on the p-type CuAlO2 and n-type Si is investigated. Compared with the CuAlO2/Si device without H2O2 treatment, the CuAlO2/Si device with H2O2 treatment exhibits a better rectification behavior. The forward-bias current–voltage characteristics can be explained on the basis of the space charge limited current theory for CuAlO2/Si device without H2O2 treatment. However, the thermionic emission model is the dominant process in this fabricated CuAlO2/Si device with H2O2 treatment. The enhanced device performance is mainly the result of the formation of Si–O bonds that serves to reduce the number of interface states. The effect of H2O2 treatment on the sensitivity to solar irradiation and the response time for CuAlO2/Si devices is also studied. An increase in the values of photocurrent and photosensitivity is attributed to the rectification performance improvement that results from interface passivation.",
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Effects of interface modification on electrical and optoelectronic properties of p-type CuAlO2/n-type Si heterojunction devices. / Lin, Yow-Jon; Chang, Gi Min; Wu, Chang Lin.

In: Journal of Materials Science: Materials in Electronics, Vol. 29, No. 1, 01.01.2018, p. 211-216.

Research output: Contribution to journalArticle

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AB - The effect of interface modification on the electrical properties of heterojunction diodes based on the p-type CuAlO2 and n-type Si is investigated. Compared with the CuAlO2/Si device without H2O2 treatment, the CuAlO2/Si device with H2O2 treatment exhibits a better rectification behavior. The forward-bias current–voltage characteristics can be explained on the basis of the space charge limited current theory for CuAlO2/Si device without H2O2 treatment. However, the thermionic emission model is the dominant process in this fabricated CuAlO2/Si device with H2O2 treatment. The enhanced device performance is mainly the result of the formation of Si–O bonds that serves to reduce the number of interface states. The effect of H2O2 treatment on the sensitivity to solar irradiation and the response time for CuAlO2/Si devices is also studied. An increase in the values of photocurrent and photosensitivity is attributed to the rectification performance improvement that results from interface passivation.

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