Abstract
The fabrication and detailed electrical properties of heterojunction diodes based on n-type ZnO and p-type Si were reported. The effect of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes was investigated. The n-type ZnO/p-type Si diode without H2O2 treatment showed a poor rectifying behavior with an ideality factor (n) of 2.5 and high leakage, indicating that the interfacial ZnSixOy layer influenced the electronic conduction through the device. However, the n-type ZnO/p-type Si diode with H2O2 treatment showed a good rectifying behavior with n of 1.3 and low leakage. This is because the thin SiOx layer acts as a thermodynamically stable buffer layer to suppress interfacial reaction between ZnO and Si. In addition, the enhanced photo-responsivity can be interpreted by the device rectifying performance and interface passivation.
| Original language | English |
|---|---|
| Pages (from-to) | 154-157 |
| Number of pages | 4 |
| Journal | Thin Solid Films |
| Volume | 525 |
| DOIs | |
| Publication status | Published - 2012 Dec 15 |
Fingerprint
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Surfaces and Interfaces
- Surfaces, Coatings and Films
- Metals and Alloys
- Materials Chemistry
Cite this
}
Effects of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes. / He, Guan Ru; Lin, Yow Jon; Chang, Hsing Cheng; Chen, Ya Hui.
In: Thin Solid Films, Vol. 525, 15.12.2012, p. 154-157.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effects of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes
AU - He, Guan Ru
AU - Lin, Yow Jon
AU - Chang, Hsing Cheng
AU - Chen, Ya Hui
PY - 2012/12/15
Y1 - 2012/12/15
N2 - The fabrication and detailed electrical properties of heterojunction diodes based on n-type ZnO and p-type Si were reported. The effect of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes was investigated. The n-type ZnO/p-type Si diode without H2O2 treatment showed a poor rectifying behavior with an ideality factor (n) of 2.5 and high leakage, indicating that the interfacial ZnSixOy layer influenced the electronic conduction through the device. However, the n-type ZnO/p-type Si diode with H2O2 treatment showed a good rectifying behavior with n of 1.3 and low leakage. This is because the thin SiOx layer acts as a thermodynamically stable buffer layer to suppress interfacial reaction between ZnO and Si. In addition, the enhanced photo-responsivity can be interpreted by the device rectifying performance and interface passivation.
AB - The fabrication and detailed electrical properties of heterojunction diodes based on n-type ZnO and p-type Si were reported. The effect of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes was investigated. The n-type ZnO/p-type Si diode without H2O2 treatment showed a poor rectifying behavior with an ideality factor (n) of 2.5 and high leakage, indicating that the interfacial ZnSixOy layer influenced the electronic conduction through the device. However, the n-type ZnO/p-type Si diode with H2O2 treatment showed a good rectifying behavior with n of 1.3 and low leakage. This is because the thin SiOx layer acts as a thermodynamically stable buffer layer to suppress interfacial reaction between ZnO and Si. In addition, the enhanced photo-responsivity can be interpreted by the device rectifying performance and interface passivation.
UR - http://www.scopus.com/inward/record.url?scp=84870248093&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84870248093&partnerID=8YFLogxK
U2 - 10.1016/j.tsf.2012.10.056
DO - 10.1016/j.tsf.2012.10.056
M3 - Article
AN - SCOPUS:84870248093
VL - 525
SP - 154
EP - 157
JO - Thin Solid Films
JF - Thin Solid Films
SN - 0040-6090
ER -