Effects of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes

Guan Ru He, Yow Jon Lin, Hsing Cheng Chang, Ya Hui Chen

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

The fabrication and detailed electrical properties of heterojunction diodes based on n-type ZnO and p-type Si were reported. The effect of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes was investigated. The n-type ZnO/p-type Si diode without H2O2 treatment showed a poor rectifying behavior with an ideality factor (n) of 2.5 and high leakage, indicating that the interfacial ZnSixOy layer influenced the electronic conduction through the device. However, the n-type ZnO/p-type Si diode with H2O2 treatment showed a good rectifying behavior with n of 1.3 and low leakage. This is because the thin SiOx layer acts as a thermodynamically stable buffer layer to suppress interfacial reaction between ZnO and Si. In addition, the enhanced photo-responsivity can be interpreted by the device rectifying performance and interface passivation.

Original languageEnglish
Pages (from-to)154-157
Number of pages4
JournalThin Solid Films
Volume525
DOIs
Publication statusPublished - 2012 Dec 15

Fingerprint

Diodes
Electric properties
diodes
electrical properties
leakage
Buffer layers
Surface chemistry
Passivation
passivity
Heterojunctions
heterojunctions
buffers
conduction
Fabrication
fabrication
electronics

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Metals and Alloys
  • Materials Chemistry

Cite this

@article{eb9ac45039414af3a510a0815e55a836,
title = "Effects of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes",
abstract = "The fabrication and detailed electrical properties of heterojunction diodes based on n-type ZnO and p-type Si were reported. The effect of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes was investigated. The n-type ZnO/p-type Si diode without H2O2 treatment showed a poor rectifying behavior with an ideality factor (n) of 2.5 and high leakage, indicating that the interfacial ZnSixOy layer influenced the electronic conduction through the device. However, the n-type ZnO/p-type Si diode with H2O2 treatment showed a good rectifying behavior with n of 1.3 and low leakage. This is because the thin SiOx layer acts as a thermodynamically stable buffer layer to suppress interfacial reaction between ZnO and Si. In addition, the enhanced photo-responsivity can be interpreted by the device rectifying performance and interface passivation.",
author = "He, {Guan Ru} and Lin, {Yow Jon} and Chang, {Hsing Cheng} and Chen, {Ya Hui}",
year = "2012",
month = "12",
day = "15",
doi = "10.1016/j.tsf.2012.10.056",
language = "English",
volume = "525",
pages = "154--157",
journal = "Thin Solid Films",
issn = "0040-6090",
publisher = "Elsevier",

}

Effects of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes. / He, Guan Ru; Lin, Yow Jon; Chang, Hsing Cheng; Chen, Ya Hui.

In: Thin Solid Films, Vol. 525, 15.12.2012, p. 154-157.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effects of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes

AU - He, Guan Ru

AU - Lin, Yow Jon

AU - Chang, Hsing Cheng

AU - Chen, Ya Hui

PY - 2012/12/15

Y1 - 2012/12/15

N2 - The fabrication and detailed electrical properties of heterojunction diodes based on n-type ZnO and p-type Si were reported. The effect of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes was investigated. The n-type ZnO/p-type Si diode without H2O2 treatment showed a poor rectifying behavior with an ideality factor (n) of 2.5 and high leakage, indicating that the interfacial ZnSixOy layer influenced the electronic conduction through the device. However, the n-type ZnO/p-type Si diode with H2O2 treatment showed a good rectifying behavior with n of 1.3 and low leakage. This is because the thin SiOx layer acts as a thermodynamically stable buffer layer to suppress interfacial reaction between ZnO and Si. In addition, the enhanced photo-responsivity can be interpreted by the device rectifying performance and interface passivation.

AB - The fabrication and detailed electrical properties of heterojunction diodes based on n-type ZnO and p-type Si were reported. The effect of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes was investigated. The n-type ZnO/p-type Si diode without H2O2 treatment showed a poor rectifying behavior with an ideality factor (n) of 2.5 and high leakage, indicating that the interfacial ZnSixOy layer influenced the electronic conduction through the device. However, the n-type ZnO/p-type Si diode with H2O2 treatment showed a good rectifying behavior with n of 1.3 and low leakage. This is because the thin SiOx layer acts as a thermodynamically stable buffer layer to suppress interfacial reaction between ZnO and Si. In addition, the enhanced photo-responsivity can be interpreted by the device rectifying performance and interface passivation.

UR - http://www.scopus.com/inward/record.url?scp=84870248093&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84870248093&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2012.10.056

DO - 10.1016/j.tsf.2012.10.056

M3 - Article

VL - 525

SP - 154

EP - 157

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -