Effects of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes

Guan Ru He; Yow Jon Lin; Hsing Cheng Chang; Ya Hui Chen

doi:10.1016/j.tsf.2012.10.056

Effects of interface modification by H₂O₂ treatment on the electrical properties of n-type ZnO/p-type Si diodes

Guan Ru He, Yow Jon Lin, Hsing Cheng Chang, Ya Hui Chen

Graduate Institute of Photonics

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

The fabrication and detailed electrical properties of heterojunction diodes based on n-type ZnO and p-type Si were reported. The effect of interface modification by H₂O₂ treatment on the electrical properties of n-type ZnO/p-type Si diodes was investigated. The n-type ZnO/p-type Si diode without H₂O₂ treatment showed a poor rectifying behavior with an ideality factor (n) of 2.5 and high leakage, indicating that the interfacial ZnSi_xO_y layer influenced the electronic conduction through the device. However, the n-type ZnO/p-type Si diode with H₂O₂ treatment showed a good rectifying behavior with n of 1.3 and low leakage. This is because the thin SiO_x layer acts as a thermodynamically stable buffer layer to suppress interfacial reaction between ZnO and Si. In addition, the enhanced photo-responsivity can be interpreted by the device rectifying performance and interface passivation.

Original language	English
Pages (from-to)	154-157
Number of pages	4
Journal	Thin Solid Films
Volume	525
DOIs	https://doi.org/10.1016/j.tsf.2012.10.056
Publication status	Published - 2012 Dec 15

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

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@article{eb9ac45039414af3a510a0815e55a836,

title = "Effects of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes",

abstract = "The fabrication and detailed electrical properties of heterojunction diodes based on n-type ZnO and p-type Si were reported. The effect of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes was investigated. The n-type ZnO/p-type Si diode without H2O2 treatment showed a poor rectifying behavior with an ideality factor (n) of 2.5 and high leakage, indicating that the interfacial ZnSixOy layer influenced the electronic conduction through the device. However, the n-type ZnO/p-type Si diode with H2O2 treatment showed a good rectifying behavior with n of 1.3 and low leakage. This is because the thin SiOx layer acts as a thermodynamically stable buffer layer to suppress interfacial reaction between ZnO and Si. In addition, the enhanced photo-responsivity can be interpreted by the device rectifying performance and interface passivation.",

author = "He, {Guan Ru} and Lin, {Yow Jon} and Chang, {Hsing Cheng} and Chen, {Ya Hui}",

year = "2012",

month = dec,

day = "15",

doi = "10.1016/j.tsf.2012.10.056",

language = "English",

volume = "525",

pages = "154--157",

journal = "Thin Solid Films",

issn = "0040-6090",

publisher = "Elsevier",

}

TY - JOUR

T1 - Effects of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes

AU - He, Guan Ru

AU - Lin, Yow Jon

AU - Chang, Hsing Cheng

AU - Chen, Ya Hui

PY - 2012/12/15

Y1 - 2012/12/15

N2 - The fabrication and detailed electrical properties of heterojunction diodes based on n-type ZnO and p-type Si were reported. The effect of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes was investigated. The n-type ZnO/p-type Si diode without H2O2 treatment showed a poor rectifying behavior with an ideality factor (n) of 2.5 and high leakage, indicating that the interfacial ZnSixOy layer influenced the electronic conduction through the device. However, the n-type ZnO/p-type Si diode with H2O2 treatment showed a good rectifying behavior with n of 1.3 and low leakage. This is because the thin SiOx layer acts as a thermodynamically stable buffer layer to suppress interfacial reaction between ZnO and Si. In addition, the enhanced photo-responsivity can be interpreted by the device rectifying performance and interface passivation.

AB - The fabrication and detailed electrical properties of heterojunction diodes based on n-type ZnO and p-type Si were reported. The effect of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes was investigated. The n-type ZnO/p-type Si diode without H2O2 treatment showed a poor rectifying behavior with an ideality factor (n) of 2.5 and high leakage, indicating that the interfacial ZnSixOy layer influenced the electronic conduction through the device. However, the n-type ZnO/p-type Si diode with H2O2 treatment showed a good rectifying behavior with n of 1.3 and low leakage. This is because the thin SiOx layer acts as a thermodynamically stable buffer layer to suppress interfacial reaction between ZnO and Si. In addition, the enhanced photo-responsivity can be interpreted by the device rectifying performance and interface passivation.

UR - http://www.scopus.com/inward/record.url?scp=84870248093&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84870248093&partnerID=8YFLogxK

U2 - 10.1016/j.tsf.2012.10.056

DO - 10.1016/j.tsf.2012.10.056

M3 - Article

AN - SCOPUS:84870248093

VL - 525

SP - 154

EP - 157

JO - Thin Solid Films

JF - Thin Solid Films

SN - 0040-6090

ER -