Effects of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes

Guan Ru He; Yow Jon Lin; Hsing Cheng Chang; Ya Hui Chen

doi:10.1016/j.tsf.2012.10.056

Effects of interface modification by H₂O₂ treatment on the electrical properties of n-type ZnO/p-type Si diodes

Guan Ru He, Yow Jon Lin, Hsing Cheng Chang, Ya Hui Chen

Graduate Institute of Photonics

Research output: Contribution to journal › Article

10 Citations (Scopus)

Abstract

The fabrication and detailed electrical properties of heterojunction diodes based on n-type ZnO and p-type Si were reported. The effect of interface modification by H₂O₂ treatment on the electrical properties of n-type ZnO/p-type Si diodes was investigated. The n-type ZnO/p-type Si diode without H₂O₂ treatment showed a poor rectifying behavior with an ideality factor (n) of 2.5 and high leakage, indicating that the interfacial ZnSi_xO_y layer influenced the electronic conduction through the device. However, the n-type ZnO/p-type Si diode with H₂O₂ treatment showed a good rectifying behavior with n of 1.3 and low leakage. This is because the thin SiO_x layer acts as a thermodynamically stable buffer layer to suppress interfacial reaction between ZnO and Si. In addition, the enhanced photo-responsivity can be interpreted by the device rectifying performance and interface passivation.

Original language	English
Pages (from-to)	154-157
Number of pages	4
Journal	Thin Solid Films
Volume	525
DOIs	https://doi.org/10.1016/j.tsf.2012.10.056
Publication status	Published - 2012 Dec 15

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All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Surfaces and Interfaces
Surfaces, Coatings and Films
Metals and Alloys
Materials Chemistry

Cite this

He, G. R., Lin, Y. J., Chang, H. C., & Chen, Y. H. (2012). Effects of interface modification by H₂O₂ treatment on the electrical properties of n-type ZnO/p-type Si diodes. Thin Solid Films, 525, 154-157. https://doi.org/10.1016/j.tsf.2012.10.056

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abstract = "The fabrication and detailed electrical properties of heterojunction diodes based on n-type ZnO and p-type Si were reported. The effect of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes was investigated. The n-type ZnO/p-type Si diode without H2O2 treatment showed a poor rectifying behavior with an ideality factor (n) of 2.5 and high leakage, indicating that the interfacial ZnSixOy layer influenced the electronic conduction through the device. However, the n-type ZnO/p-type Si diode with H2O2 treatment showed a good rectifying behavior with n of 1.3 and low leakage. This is because the thin SiOx layer acts as a thermodynamically stable buffer layer to suppress interfacial reaction between ZnO and Si. In addition, the enhanced photo-responsivity can be interpreted by the device rectifying performance and interface passivation.",

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N2 - The fabrication and detailed electrical properties of heterojunction diodes based on n-type ZnO and p-type Si were reported. The effect of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes was investigated. The n-type ZnO/p-type Si diode without H2O2 treatment showed a poor rectifying behavior with an ideality factor (n) of 2.5 and high leakage, indicating that the interfacial ZnSixOy layer influenced the electronic conduction through the device. However, the n-type ZnO/p-type Si diode with H2O2 treatment showed a good rectifying behavior with n of 1.3 and low leakage. This is because the thin SiOx layer acts as a thermodynamically stable buffer layer to suppress interfacial reaction between ZnO and Si. In addition, the enhanced photo-responsivity can be interpreted by the device rectifying performance and interface passivation.

AB - The fabrication and detailed electrical properties of heterojunction diodes based on n-type ZnO and p-type Si were reported. The effect of interface modification by H2O2 treatment on the electrical properties of n-type ZnO/p-type Si diodes was investigated. The n-type ZnO/p-type Si diode without H2O2 treatment showed a poor rectifying behavior with an ideality factor (n) of 2.5 and high leakage, indicating that the interfacial ZnSixOy layer influenced the electronic conduction through the device. However, the n-type ZnO/p-type Si diode with H2O2 treatment showed a good rectifying behavior with n of 1.3 and low leakage. This is because the thin SiOx layer acts as a thermodynamically stable buffer layer to suppress interfacial reaction between ZnO and Si. In addition, the enhanced photo-responsivity can be interpreted by the device rectifying performance and interface passivation.

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10.1016/j.tsf.2012.10.056