Effects of H₂O₂ treatment on the temperature-dependent behavior of carrier transport and the optoelectronic properties for sol–gel grown MoS₂/Si nanowire/Si devices

The effects of H₂O₂ treatment on the temperature-dependent behavior of carrier transport and the optoelectronic properties of a MoS₂/Si nanowire (SiNW)/n-Si device are studied. The MoS₂ thin films are prepared using the sol–gel method. The thermionic emission–diffusion model is the dominant process in the MoS₂/SiNW/n-Si device when there is no H₂O₂ treatment. However, carrier transport in MoS₂/SiNW/n-Si devices that are subject to H₂O₂ treatment is dominated by thermionic emission, so it demonstrates reliable rectification. Passivation of the SiNW surface increases the responsivity to solar irradiation. There is a low trap density at the MoS₂/SiNW interfaces so the increase in photocurrent density for the MoS₂/SiNW/n-Si device that is subject to H₂O₂ treatment is due to greater internal power conversion efficiency. The photo-response results for MoS₂/SiNW/n-Si devices that are subject to (are not subject to) H₂O₂ treatment confirm that the decay in the photocurrent is due to the dominance of long-lifetime (short-lifetime) charge trapping. MoS₂/SiNW/n-Si devices that are subject to H₂O₂ treatment exhibit reliable responsivity to solar irradiation.