Effects of H2O2 treatment on the optoelectronic property of poly(3-hexylthiophene) doped with the reduced graphene oxide sheets/Si-nanowire arrays/n-type Si diodes

Yi Min Chin, Yow-Jon Lin

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

The effect of H2O2 treatment on the optoelectronic property of the poly(3-hexylthiophene) doped with reduced graphene oxide sheets (P3HT:RGO)/Si-nanowire (SiNW) arrays/n-type Si diode was examined. SiNW surface passivation influences device performance. Compared to P3HT:RGO/SiNWs/n-type Si diodes, P3HT:RGO/H2O2-treated SiNWs/n-type Si diodes exhibit much higher photoconductivity. The results revealed that SiNW surface passivation influences the photoconductivity by reducing the number of electron traps that serve to decrease the photocurrent time constant. High responsivity thus originates from efficient light absorption and carrier collection.

Original languageEnglish
Pages (from-to)232-236
Number of pages5
JournalMaterials Chemistry and Physics
Volume145
Issue number1-2
DOIs
Publication statusPublished - 2014 May 15

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Optoelectronic devices
Oxides
Graphene
Nanowires
graphene
Diodes
nanowires
diodes
Photoconductivity
Passivation
photoconductivity
passivity
oxides
Electron traps
electromagnetic absorption
Photocurrents
Light absorption
time constant
photocurrents

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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abstract = "The effect of H2O2 treatment on the optoelectronic property of the poly(3-hexylthiophene) doped with reduced graphene oxide sheets (P3HT:RGO)/Si-nanowire (SiNW) arrays/n-type Si diode was examined. SiNW surface passivation influences device performance. Compared to P3HT:RGO/SiNWs/n-type Si diodes, P3HT:RGO/H2O2-treated SiNWs/n-type Si diodes exhibit much higher photoconductivity. The results revealed that SiNW surface passivation influences the photoconductivity by reducing the number of electron traps that serve to decrease the photocurrent time constant. High responsivity thus originates from efficient light absorption and carrier collection.",
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AU - Lin, Yow-Jon

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AB - The effect of H2O2 treatment on the optoelectronic property of the poly(3-hexylthiophene) doped with reduced graphene oxide sheets (P3HT:RGO)/Si-nanowire (SiNW) arrays/n-type Si diode was examined. SiNW surface passivation influences device performance. Compared to P3HT:RGO/SiNWs/n-type Si diodes, P3HT:RGO/H2O2-treated SiNWs/n-type Si diodes exhibit much higher photoconductivity. The results revealed that SiNW surface passivation influences the photoconductivity by reducing the number of electron traps that serve to decrease the photocurrent time constant. High responsivity thus originates from efficient light absorption and carrier collection.

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