Effects of graphene content on resistive switching for Au/poly(methyl methacrylate): reduced graphene oxide/heavily doped p-type Si devices

Y.-J. Lin; C.-L. Wu; Z.-Y. Ke; H.-C. Chang

doi:10.1007/s12648-019-01568-7

Effects of graphene content on resistive switching for Au/poly(methyl methacrylate): reduced graphene oxide/heavily doped p-type Si devices

Y.-J. Lin, C.-L. Wu, Z.-Y. Ke, H.-C. Chang

Research output: Contribution to journal › Article › peer-review

Original language	English
Pages (from-to)	1209-1214
Number of pages	6
Journal	Indian Journal of Physics
Volume	94
Issue number	8
DOIs	https://doi.org/10.1007/s12648-019-01568-7
Publication status	Published - 2020

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10.1007/s12648-019-01568-7

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Cite this

@article{ae94a20a0cdd4476a27d6e412ea2394d,

title = "Effects of graphene content on resistive switching for Au/poly(methyl methacrylate): reduced graphene oxide/heavily doped p-type Si devices",

author = "Y.-J. Lin and C.-L. Wu and Z.-Y. Ke and H.-C. Chang",

note = "Export Date: 8 August 2020",

year = "2020",

doi = "10.1007/s12648-019-01568-7",

language = "English",

volume = "94",

pages = "1209--1214",

journal = "Indian Journal of Physics",

issn = "0252-9262",

publisher = "Indian Physical Society",

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T1 - Effects of graphene content on resistive switching for Au/poly(methyl methacrylate): reduced graphene oxide/heavily doped p-type Si devices

AU - Lin, Y.-J.

AU - Wu, C.-L.

AU - Ke, Z.-Y.

AU - Chang, H.-C.

N1 - Export Date: 8 August 2020

PY - 2020

Y1 - 2020

U2 - 10.1007/s12648-019-01568-7

DO - 10.1007/s12648-019-01568-7

M3 - Article

VL - 94

SP - 1209

EP - 1214

JO - Indian Journal of Physics

JF - Indian Journal of Physics

SN - 0252-9262

IS - 8

ER -