Effects of focused gallium ion-beam implantation on properties of nanochannels on silicon-on-insulator substrates

A. Pan, Y. L. Wang, C. S. Wu, C. D. Chen, N. W. Liu

Research output: Contribution to journalArticle

9 Citations (Scopus)


Gallium dopants have been introduced into micrometer and nanometer sized silicon-on-insulator devices by means of focused ion beam maskless implantation. Structures of implanted devices before and after annealing have been characterized by cross-sectional transmission electron microscopy and Raman spectroscopy. The implanted/annealed micrometer devices exhibit uniformly lower electric resistance due to the presence of dopants; and the nanometer scale devices also show lower resistance but with a large device-to-device fluctuation. The fluctuation is likely to be the result of statistical nonuniformity in the spatial distribution of the end-of-range damage on the nanometer scale.

Original languageEnglish
Pages (from-to)2288-2291
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Issue number6
Publication statusPublished - 2005 Nov 1


All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

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