Effects of focused gallium ion-beam implantation on properties of nanochannels on silicon-on-insulator substrates

A. Pan; Y. L. Wang; C. S. Wu; C. D. Chen; N. W. Liu

doi:10.1116/1.2101599

Effects of focused gallium ion-beam implantation on properties of nanochannels on silicon-on-insulator substrates

A. Pan, Y. L. Wang, C. S. Wu, C. D. Chen, N. W. Liu

Department of Physics

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

Gallium dopants have been introduced into micrometer and nanometer sized silicon-on-insulator devices by means of focused ion beam maskless implantation. Structures of implanted devices before and after annealing have been characterized by cross-sectional transmission electron microscopy and Raman spectroscopy. The implanted/annealed micrometer devices exhibit uniformly lower electric resistance due to the presence of dopants; and the nanometer scale devices also show lower resistance but with a large device-to-device fluctuation. The fluctuation is likely to be the result of statistical nonuniformity in the spatial distribution of the end-of-range damage on the nanometer scale.

Original language	English
Pages (from-to)	2288-2291
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	23
Issue number	6
DOIs	https://doi.org/10.1116/1.2101599
Publication status	Published - 2005 Nov

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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@article{716270f45eaf45e89959470645253491,

title = "Effects of focused gallium ion-beam implantation on properties of nanochannels on silicon-on-insulator substrates",

abstract = "Gallium dopants have been introduced into micrometer and nanometer sized silicon-on-insulator devices by means of focused ion beam maskless implantation. Structures of implanted devices before and after annealing have been characterized by cross-sectional transmission electron microscopy and Raman spectroscopy. The implanted/annealed micrometer devices exhibit uniformly lower electric resistance due to the presence of dopants; and the nanometer scale devices also show lower resistance but with a large device-to-device fluctuation. The fluctuation is likely to be the result of statistical nonuniformity in the spatial distribution of the end-of-range damage on the nanometer scale.",

author = "A. Pan and Wang, {Y. L.} and Wu, {C. S.} and Chen, {C. D.} and Liu, {N. W.}",

note = "Funding Information: The authors thank Mr. S. Biring, and Dr. J. K. Wang of IAMS, Academia Sinica, for the Raman measurements and Dr. Y. F. Shieh of Ma-tek for the XTEM studies. This work has been supported by the National Science Council ofTaiwan (NSC 92-2112-M-001-066 and 93-2120-M-001-2-002). ",

year = "2005",

month = nov,

doi = "10.1116/1.2101599",

language = "English",

volume = "23",

pages = "2288--2291",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "6",

}

Effects of focused gallium ion-beam implantation on properties of nanochannels on silicon-on-insulator substrates. / Pan, A.; Wang, Y. L.; Wu, C. S.; Chen, C. D.; Liu, N. W.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 6, 11.2005, p. 2288-2291.

Research output: Contribution to journal › Article › peer-review

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AU - Pan, A.

AU - Wang, Y. L.

AU - Wu, C. S.

AU - Chen, C. D.

AU - Liu, N. W.

N1 - Funding Information: The authors thank Mr. S. Biring, and Dr. J. K. Wang of IAMS, Academia Sinica, for the Raman measurements and Dr. Y. F. Shieh of Ma-tek for the XTEM studies. This work has been supported by the National Science Council ofTaiwan (NSC 92-2112-M-001-066 and 93-2120-M-001-2-002).

PY - 2005/11

Y1 - 2005/11

N2 - Gallium dopants have been introduced into micrometer and nanometer sized silicon-on-insulator devices by means of focused ion beam maskless implantation. Structures of implanted devices before and after annealing have been characterized by cross-sectional transmission electron microscopy and Raman spectroscopy. The implanted/annealed micrometer devices exhibit uniformly lower electric resistance due to the presence of dopants; and the nanometer scale devices also show lower resistance but with a large device-to-device fluctuation. The fluctuation is likely to be the result of statistical nonuniformity in the spatial distribution of the end-of-range damage on the nanometer scale.

AB - Gallium dopants have been introduced into micrometer and nanometer sized silicon-on-insulator devices by means of focused ion beam maskless implantation. Structures of implanted devices before and after annealing have been characterized by cross-sectional transmission electron microscopy and Raman spectroscopy. The implanted/annealed micrometer devices exhibit uniformly lower electric resistance due to the presence of dopants; and the nanometer scale devices also show lower resistance but with a large device-to-device fluctuation. The fluctuation is likely to be the result of statistical nonuniformity in the spatial distribution of the end-of-range damage on the nanometer scale.

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