Effects of focused gallium ion-beam implantation on properties of nanochannels on silicon-on-insulator substrates

A. Pan; Y. L. Wang; C. S. Wu; C. D. Chen; N. W. Liu

doi:10.1116/1.2101599

Effects of focused gallium ion-beam implantation on properties of nanochannels on silicon-on-insulator substrates

A. Pan, Y. L. Wang, C. S. Wu, C. D. Chen, N. W. Liu

Department of Physics

Research output: Contribution to journal › Article

9 Citations (Scopus)

Abstract

Gallium dopants have been introduced into micrometer and nanometer sized silicon-on-insulator devices by means of focused ion beam maskless implantation. Structures of implanted devices before and after annealing have been characterized by cross-sectional transmission electron microscopy and Raman spectroscopy. The implanted/annealed micrometer devices exhibit uniformly lower electric resistance due to the presence of dopants; and the nanometer scale devices also show lower resistance but with a large device-to-device fluctuation. The fluctuation is likely to be the result of statistical nonuniformity in the spatial distribution of the end-of-range damage on the nanometer scale.

Original language	English
Pages (from-to)	2288-2291
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	23
Issue number	6
DOIs	https://doi.org/10.1116/1.2101599
Publication status	Published - 2005 Nov 1

Fingerprint

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

Pan, A., Wang, Y. L., Wu, C. S., Chen, C. D., & Liu, N. W. (2005). Effects of focused gallium ion-beam implantation on properties of nanochannels on silicon-on-insulator substrates. Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, 23(6), 2288-2291. https://doi.org/10.1116/1.2101599

@article{716270f45eaf45e89959470645253491,

title = "Effects of focused gallium ion-beam implantation on properties of nanochannels on silicon-on-insulator substrates",

abstract = "Gallium dopants have been introduced into micrometer and nanometer sized silicon-on-insulator devices by means of focused ion beam maskless implantation. Structures of implanted devices before and after annealing have been characterized by cross-sectional transmission electron microscopy and Raman spectroscopy. The implanted/annealed micrometer devices exhibit uniformly lower electric resistance due to the presence of dopants; and the nanometer scale devices also show lower resistance but with a large device-to-device fluctuation. The fluctuation is likely to be the result of statistical nonuniformity in the spatial distribution of the end-of-range damage on the nanometer scale.",

author = "A. Pan and Wang, {Y. L.} and Wu, {C. S.} and Chen, {C. D.} and Liu, {N. W.}",

year = "2005",

month = nov

day = "1",

doi = "10.1116/1.2101599",

language = "English",

volume = "23",

pages = "2288--2291",

journal = "Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "6",

}

TY - JOUR

T1 - Effects of focused gallium ion-beam implantation on properties of nanochannels on silicon-on-insulator substrates

AU - Pan, A.

AU - Wang, Y. L.

AU - Wu, C. S.

AU - Chen, C. D.

AU - Liu, N. W.

PY - 2005/11/1

Y1 - 2005/11/1

N2 - Gallium dopants have been introduced into micrometer and nanometer sized silicon-on-insulator devices by means of focused ion beam maskless implantation. Structures of implanted devices before and after annealing have been characterized by cross-sectional transmission electron microscopy and Raman spectroscopy. The implanted/annealed micrometer devices exhibit uniformly lower electric resistance due to the presence of dopants; and the nanometer scale devices also show lower resistance but with a large device-to-device fluctuation. The fluctuation is likely to be the result of statistical nonuniformity in the spatial distribution of the end-of-range damage on the nanometer scale.

AB - Gallium dopants have been introduced into micrometer and nanometer sized silicon-on-insulator devices by means of focused ion beam maskless implantation. Structures of implanted devices before and after annealing have been characterized by cross-sectional transmission electron microscopy and Raman spectroscopy. The implanted/annealed micrometer devices exhibit uniformly lower electric resistance due to the presence of dopants; and the nanometer scale devices also show lower resistance but with a large device-to-device fluctuation. The fluctuation is likely to be the result of statistical nonuniformity in the spatial distribution of the end-of-range damage on the nanometer scale.

UR - http://www.scopus.com/inward/record.url?scp=29044439018&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=29044439018&partnerID=8YFLogxK

U2 - 10.1116/1.2101599

DO - 10.1116/1.2101599

M3 - Article

AN - SCOPUS:29044439018

VL - 23

SP - 2288

EP - 2291

JO - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

SN - 1071-1023

IS - 6

ER -

Access to Document

10.1116/1.2101599