Effects of focused gallium ion-beam implantation on properties of nanochannels on silicon-on-insulator substrates

A. Pan; Y. L. Wang; C. S. Wu; C. D. Chen; N. W. Liu

doi:10.1116/1.2101599

Effects of focused gallium ion-beam implantation on properties of nanochannels on silicon-on-insulator substrates

A. Pan, Y. L. Wang, C. S. Wu, C. D. Chen, N. W. Liu

Department of Physics

Research output: Contribution to journal › Article

9 Citations (Scopus)

Abstract

Gallium dopants have been introduced into micrometer and nanometer sized silicon-on-insulator devices by means of focused ion beam maskless implantation. Structures of implanted devices before and after annealing have been characterized by cross-sectional transmission electron microscopy and Raman spectroscopy. The implanted/annealed micrometer devices exhibit uniformly lower electric resistance due to the presence of dopants; and the nanometer scale devices also show lower resistance but with a large device-to-device fluctuation. The fluctuation is likely to be the result of statistical nonuniformity in the spatial distribution of the end-of-range damage on the nanometer scale.

Original language	English
Pages (from-to)	2288-2291
Number of pages	4
Journal	Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume	23
Issue number	6
DOIs	https://doi.org/10.1116/1.2101599
Publication status	Published - 2005 Nov 1

All Science Journal Classification (ASJC) codes

Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "Gallium dopants have been introduced into micrometer and nanometer sized silicon-on-insulator devices by means of focused ion beam maskless implantation. Structures of implanted devices before and after annealing have been characterized by cross-sectional transmission electron microscopy and Raman spectroscopy. The implanted/annealed micrometer devices exhibit uniformly lower electric resistance due to the presence of dopants; and the nanometer scale devices also show lower resistance but with a large device-to-device fluctuation. The fluctuation is likely to be the result of statistical nonuniformity in the spatial distribution of the end-of-range damage on the nanometer scale.",

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AU - Pan, A.

AU - Wang, Y. L.

AU - Wu, C. S.

AU - Chen, C. D.

AU - Liu, N. W.

PY - 2005/11/1

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N2 - Gallium dopants have been introduced into micrometer and nanometer sized silicon-on-insulator devices by means of focused ion beam maskless implantation. Structures of implanted devices before and after annealing have been characterized by cross-sectional transmission electron microscopy and Raman spectroscopy. The implanted/annealed micrometer devices exhibit uniformly lower electric resistance due to the presence of dopants; and the nanometer scale devices also show lower resistance but with a large device-to-device fluctuation. The fluctuation is likely to be the result of statistical nonuniformity in the spatial distribution of the end-of-range damage on the nanometer scale.

AB - Gallium dopants have been introduced into micrometer and nanometer sized silicon-on-insulator devices by means of focused ion beam maskless implantation. Structures of implanted devices before and after annealing have been characterized by cross-sectional transmission electron microscopy and Raman spectroscopy. The implanted/annealed micrometer devices exhibit uniformly lower electric resistance due to the presence of dopants; and the nanometer scale devices also show lower resistance but with a large device-to-device fluctuation. The fluctuation is likely to be the result of statistical nonuniformity in the spatial distribution of the end-of-range damage on the nanometer scale.

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