Effects of focused gallium ion-beam implantation on properties of nanochannels on silicon-on-insulator substrates

A. Pan, Y. L. Wang, C. S. Wu, C. D. Chen, N. W. Liu

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

Gallium dopants have been introduced into micrometer and nanometer sized silicon-on-insulator devices by means of focused ion beam maskless implantation. Structures of implanted devices before and after annealing have been characterized by cross-sectional transmission electron microscopy and Raman spectroscopy. The implanted/annealed micrometer devices exhibit uniformly lower electric resistance due to the presence of dopants; and the nanometer scale devices also show lower resistance but with a large device-to-device fluctuation. The fluctuation is likely to be the result of statistical nonuniformity in the spatial distribution of the end-of-range damage on the nanometer scale.

Original languageEnglish
Pages (from-to)2288-2291
Number of pages4
JournalJournal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
Volume23
Issue number6
DOIs
Publication statusPublished - 2005 Nov 1

Fingerprint

Gallium
Ion beams
gallium
implantation
ion beams
Doping (additives)
insulators
Silicon
Focused ion beams
silicon
Substrates
Spatial distribution
Raman spectroscopy
Annealing
Transmission electron microscopy
micrometers
low resistance
nonuniformity
spatial distribution
damage

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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title = "Effects of focused gallium ion-beam implantation on properties of nanochannels on silicon-on-insulator substrates",
abstract = "Gallium dopants have been introduced into micrometer and nanometer sized silicon-on-insulator devices by means of focused ion beam maskless implantation. Structures of implanted devices before and after annealing have been characterized by cross-sectional transmission electron microscopy and Raman spectroscopy. The implanted/annealed micrometer devices exhibit uniformly lower electric resistance due to the presence of dopants; and the nanometer scale devices also show lower resistance but with a large device-to-device fluctuation. The fluctuation is likely to be the result of statistical nonuniformity in the spatial distribution of the end-of-range damage on the nanometer scale.",
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Effects of focused gallium ion-beam implantation on properties of nanochannels on silicon-on-insulator substrates. / Pan, A.; Wang, Y. L.; Wu, C. S.; Chen, C. D.; Liu, N. W.

In: Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures, Vol. 23, No. 6, 01.11.2005, p. 2288-2291.

Research output: Contribution to journalArticle

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AU - Wang, Y. L.

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AU - Liu, N. W.

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