Gallium dopants have been introduced into micrometer and nanometer sized silicon-on-insulator devices by means of focused ion beam maskless implantation. Structures of implanted devices before and after annealing have been characterized by cross-sectional transmission electron microscopy and Raman spectroscopy. The implanted/annealed micrometer devices exhibit uniformly lower electric resistance due to the presence of dopants; and the nanometer scale devices also show lower resistance but with a large device-to-device fluctuation. The fluctuation is likely to be the result of statistical nonuniformity in the spatial distribution of the end-of-range damage on the nanometer scale.
|Number of pages||4|
|Journal||Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures|
|Publication status||Published - 2005 Nov 1|
All Science Journal Classification (ASJC) codes
- Condensed Matter Physics
- Electrical and Electronic Engineering