Effects of field cooling direction on magnetoresistance of exchange-biased magnetic tunnel junction rings

Che Chin Chen, Cheng Yi Kuo, Lance Horng, Shinji Isogami, Masakiyo Tsunoda, Migaku Takahashi, Jong-Ching Wu

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

We report an effect of field cooling direction on the magnetoresistance of ring-shaped magnetic tunnel junctions consisting of Ta 5/Cu 20/ Ta 5/NiFe 2/Cu 5/MnIr 10/CoFe 4/Al-N 1.5/CoFe 4/NiFe 20/Ta 5-cap (thickness in nm). The magnetoresistances were both enhanced, in comparison to the as-fabricated ring device, with field-cooling directions applied in the film plane as well as perpendicular to the film plane but with greater increase in the case of perpendicular-field-cooled. Many cycles of planar- and perpendicular-field- cooled alternately gave the same results. The greater enhancement of magnetoresistance is shown to be due to the formation of an onion like magnetization configuration in the pinned layer after perpendicular-field- cooled, resulting in a better relative magnetization alignment between the pinned layer and the free layer in the minor loop region. Magnetic force microscopy (MFM) was undertaken to reveal the uniform and onion like magnetization configurations in the pinned layer of ring devices with the same dimensions, but with layer structures of Ta 5/NiFe 2/Cu 5/MnIr 10/CoFe 4/Cu 1/Ta 1 (thickness in nm) for the planar- and perpendicular-field-cooled, respectively. In addition, size-dependent behavior was explored and the results show that the formation of onion like magnetization after perpendicularfield- cooled is associated with the strong shape anisotropy in the narrower linewidths of ring devices.

Original languageEnglish
Pages (from-to)530011-530014
Number of pages4
JournalJapanese Journal of Applied Physics
Volume48
Issue number5
DOIs
Publication statusPublished - 2009 May 1

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Tunnel junctions
Magnetoresistance
tunnel junctions
Magnetization
Cooling
cooling
rings
magnetization
Magnetic force microscopy
Linewidth
magnetic force microscopy
configurations
Anisotropy
caps
alignment
anisotropy
cycles
augmentation

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Chen, Che Chin ; Kuo, Cheng Yi ; Horng, Lance ; Isogami, Shinji ; Tsunoda, Masakiyo ; Takahashi, Migaku ; Wu, Jong-Ching. / Effects of field cooling direction on magnetoresistance of exchange-biased magnetic tunnel junction rings. In: Japanese Journal of Applied Physics. 2009 ; Vol. 48, No. 5. pp. 530011-530014.
@article{c1a116d83e654dedb8d6fa5b6d0be706,
title = "Effects of field cooling direction on magnetoresistance of exchange-biased magnetic tunnel junction rings",
abstract = "We report an effect of field cooling direction on the magnetoresistance of ring-shaped magnetic tunnel junctions consisting of Ta 5/Cu 20/ Ta 5/NiFe 2/Cu 5/MnIr 10/CoFe 4/Al-N 1.5/CoFe 4/NiFe 20/Ta 5-cap (thickness in nm). The magnetoresistances were both enhanced, in comparison to the as-fabricated ring device, with field-cooling directions applied in the film plane as well as perpendicular to the film plane but with greater increase in the case of perpendicular-field-cooled. Many cycles of planar- and perpendicular-field- cooled alternately gave the same results. The greater enhancement of magnetoresistance is shown to be due to the formation of an onion like magnetization configuration in the pinned layer after perpendicular-field- cooled, resulting in a better relative magnetization alignment between the pinned layer and the free layer in the minor loop region. Magnetic force microscopy (MFM) was undertaken to reveal the uniform and onion like magnetization configurations in the pinned layer of ring devices with the same dimensions, but with layer structures of Ta 5/NiFe 2/Cu 5/MnIr 10/CoFe 4/Cu 1/Ta 1 (thickness in nm) for the planar- and perpendicular-field-cooled, respectively. In addition, size-dependent behavior was explored and the results show that the formation of onion like magnetization after perpendicularfield- cooled is associated with the strong shape anisotropy in the narrower linewidths of ring devices.",
author = "Chen, {Che Chin} and Kuo, {Cheng Yi} and Lance Horng and Shinji Isogami and Masakiyo Tsunoda and Migaku Takahashi and Jong-Ching Wu",
year = "2009",
month = "5",
day = "1",
doi = "10.1143/JJAP.48.053001",
language = "English",
volume = "48",
pages = "530011--530014",
journal = "Japanese Journal of Applied Physics",
issn = "0021-4922",
number = "5",

}

Effects of field cooling direction on magnetoresistance of exchange-biased magnetic tunnel junction rings. / Chen, Che Chin; Kuo, Cheng Yi; Horng, Lance; Isogami, Shinji; Tsunoda, Masakiyo; Takahashi, Migaku; Wu, Jong-Ching.

In: Japanese Journal of Applied Physics, Vol. 48, No. 5, 01.05.2009, p. 530011-530014.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effects of field cooling direction on magnetoresistance of exchange-biased magnetic tunnel junction rings

AU - Chen, Che Chin

AU - Kuo, Cheng Yi

AU - Horng, Lance

AU - Isogami, Shinji

AU - Tsunoda, Masakiyo

AU - Takahashi, Migaku

AU - Wu, Jong-Ching

PY - 2009/5/1

Y1 - 2009/5/1

N2 - We report an effect of field cooling direction on the magnetoresistance of ring-shaped magnetic tunnel junctions consisting of Ta 5/Cu 20/ Ta 5/NiFe 2/Cu 5/MnIr 10/CoFe 4/Al-N 1.5/CoFe 4/NiFe 20/Ta 5-cap (thickness in nm). The magnetoresistances were both enhanced, in comparison to the as-fabricated ring device, with field-cooling directions applied in the film plane as well as perpendicular to the film plane but with greater increase in the case of perpendicular-field-cooled. Many cycles of planar- and perpendicular-field- cooled alternately gave the same results. The greater enhancement of magnetoresistance is shown to be due to the formation of an onion like magnetization configuration in the pinned layer after perpendicular-field- cooled, resulting in a better relative magnetization alignment between the pinned layer and the free layer in the minor loop region. Magnetic force microscopy (MFM) was undertaken to reveal the uniform and onion like magnetization configurations in the pinned layer of ring devices with the same dimensions, but with layer structures of Ta 5/NiFe 2/Cu 5/MnIr 10/CoFe 4/Cu 1/Ta 1 (thickness in nm) for the planar- and perpendicular-field-cooled, respectively. In addition, size-dependent behavior was explored and the results show that the formation of onion like magnetization after perpendicularfield- cooled is associated with the strong shape anisotropy in the narrower linewidths of ring devices.

AB - We report an effect of field cooling direction on the magnetoresistance of ring-shaped magnetic tunnel junctions consisting of Ta 5/Cu 20/ Ta 5/NiFe 2/Cu 5/MnIr 10/CoFe 4/Al-N 1.5/CoFe 4/NiFe 20/Ta 5-cap (thickness in nm). The magnetoresistances were both enhanced, in comparison to the as-fabricated ring device, with field-cooling directions applied in the film plane as well as perpendicular to the film plane but with greater increase in the case of perpendicular-field-cooled. Many cycles of planar- and perpendicular-field- cooled alternately gave the same results. The greater enhancement of magnetoresistance is shown to be due to the formation of an onion like magnetization configuration in the pinned layer after perpendicular-field- cooled, resulting in a better relative magnetization alignment between the pinned layer and the free layer in the minor loop region. Magnetic force microscopy (MFM) was undertaken to reveal the uniform and onion like magnetization configurations in the pinned layer of ring devices with the same dimensions, but with layer structures of Ta 5/NiFe 2/Cu 5/MnIr 10/CoFe 4/Cu 1/Ta 1 (thickness in nm) for the planar- and perpendicular-field-cooled, respectively. In addition, size-dependent behavior was explored and the results show that the formation of onion like magnetization after perpendicularfield- cooled is associated with the strong shape anisotropy in the narrower linewidths of ring devices.

UR - http://www.scopus.com/inward/record.url?scp=68349119259&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=68349119259&partnerID=8YFLogxK

U2 - 10.1143/JJAP.48.053001

DO - 10.1143/JJAP.48.053001

M3 - Article

AN - SCOPUS:68349119259

VL - 48

SP - 530011

EP - 530014

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 5

ER -