Effects of dry oxidation of heavily doped p-type Si on output and transfer characteristics in organic thin film transistors

Ming Ying Tsai; Yow Jon Lin

doi:10.1016/j.mee.2012.03.007

Effects of dry oxidation of heavily doped p-type Si on output and transfer characteristics in organic thin film transistors

Ming Ying Tsai, Yow Jon Lin

Graduate Institute of Photonics

Research output: Contribution to journal › Article

5 Citations (Scopus)

Abstract

This paper presents an analysis of the effect of the SiO ₂/Si interfacial property on output (transfer) characteristics of organic thin film transistors (OTFTs). A SiO ₂ layer was grown on the heavily doped p-type Si wafer using a dry oxidation process as a gate oxide layer. The electrical conduction investigations suggest that the leakage behavior is governed by the poor insulation of the oxygen deficient oxide between SiO ₂ and Si. From the observed result, the relationship between gate leakage and output (transfer) characteristics of OTFTs was discussed.

Original language	English
Pages (from-to)	24-28
Number of pages	5
Journal	Microelectronic Engineering
Volume	96
DOIs	https://doi.org/10.1016/j.mee.2012.03.007
Publication status	Published - 2012 Aug 1

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Surfaces, Coatings and Films
Electrical and Electronic Engineering

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10.1016/j.mee.2012.03.007

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Tsai, M. Y., & Lin, Y. J. (2012). Effects of dry oxidation of heavily doped p-type Si on output and transfer characteristics in organic thin film transistors. Microelectronic Engineering, 96, 24-28. https://doi.org/10.1016/j.mee.2012.03.007

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abstract = "This paper presents an analysis of the effect of the SiO 2/Si interfacial property on output (transfer) characteristics of organic thin film transistors (OTFTs). A SiO 2 layer was grown on the heavily doped p-type Si wafer using a dry oxidation process as a gate oxide layer. The electrical conduction investigations suggest that the leakage behavior is governed by the poor insulation of the oxygen deficient oxide between SiO 2 and Si. From the observed result, the relationship between gate leakage and output (transfer) characteristics of OTFTs was discussed.",

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AB - This paper presents an analysis of the effect of the SiO 2/Si interfacial property on output (transfer) characteristics of organic thin film transistors (OTFTs). A SiO 2 layer was grown on the heavily doped p-type Si wafer using a dry oxidation process as a gate oxide layer. The electrical conduction investigations suggest that the leakage behavior is governed by the poor insulation of the oxygen deficient oxide between SiO 2 and Si. From the observed result, the relationship between gate leakage and output (transfer) characteristics of OTFTs was discussed.

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