Effects of dry oxidation of heavily doped p-type Si on output and transfer characteristics in organic thin film transistors

Ming Ying Tsai, Yow Jon Lin

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

This paper presents an analysis of the effect of the SiO 2/Si interfacial property on output (transfer) characteristics of organic thin film transistors (OTFTs). A SiO 2 layer was grown on the heavily doped p-type Si wafer using a dry oxidation process as a gate oxide layer. The electrical conduction investigations suggest that the leakage behavior is governed by the poor insulation of the oxygen deficient oxide between SiO 2 and Si. From the observed result, the relationship between gate leakage and output (transfer) characteristics of OTFTs was discussed.

Original languageEnglish
Pages (from-to)24-28
Number of pages5
JournalMicroelectronic Engineering
Volume96
DOIs
Publication statusPublished - 2012 Aug 1

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

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