Effects of dry oxidation of heavily doped p-type Si on output and transfer characteristics in organic thin film transistors

Ming Ying Tsai, Yow Jon Lin

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

This paper presents an analysis of the effect of the SiO 2/Si interfacial property on output (transfer) characteristics of organic thin film transistors (OTFTs). A SiO 2 layer was grown on the heavily doped p-type Si wafer using a dry oxidation process as a gate oxide layer. The electrical conduction investigations suggest that the leakage behavior is governed by the poor insulation of the oxygen deficient oxide between SiO 2 and Si. From the observed result, the relationship between gate leakage and output (transfer) characteristics of OTFTs was discussed.

Original languageEnglish
Pages (from-to)24-28
Number of pages5
JournalMicroelectronic Engineering
Volume96
DOIs
Publication statusPublished - 2012 Aug 1

Fingerprint

Thin film transistors
Oxides
leakage
transistors
Oxidation
oxidation
oxides
output
thin films
insulation
Insulation
wafers
Oxygen
conduction
oxygen

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

@article{bc78ad3367964ad0a4ea86522b26e4f4,
title = "Effects of dry oxidation of heavily doped p-type Si on output and transfer characteristics in organic thin film transistors",
abstract = "This paper presents an analysis of the effect of the SiO 2/Si interfacial property on output (transfer) characteristics of organic thin film transistors (OTFTs). A SiO 2 layer was grown on the heavily doped p-type Si wafer using a dry oxidation process as a gate oxide layer. The electrical conduction investigations suggest that the leakage behavior is governed by the poor insulation of the oxygen deficient oxide between SiO 2 and Si. From the observed result, the relationship between gate leakage and output (transfer) characteristics of OTFTs was discussed.",
author = "Tsai, {Ming Ying} and Lin, {Yow Jon}",
year = "2012",
month = "8",
day = "1",
doi = "10.1016/j.mee.2012.03.007",
language = "English",
volume = "96",
pages = "24--28",
journal = "Microelectronic Engineering",
issn = "0167-9317",
publisher = "Elsevier",

}

TY - JOUR

T1 - Effects of dry oxidation of heavily doped p-type Si on output and transfer characteristics in organic thin film transistors

AU - Tsai, Ming Ying

AU - Lin, Yow Jon

PY - 2012/8/1

Y1 - 2012/8/1

N2 - This paper presents an analysis of the effect of the SiO 2/Si interfacial property on output (transfer) characteristics of organic thin film transistors (OTFTs). A SiO 2 layer was grown on the heavily doped p-type Si wafer using a dry oxidation process as a gate oxide layer. The electrical conduction investigations suggest that the leakage behavior is governed by the poor insulation of the oxygen deficient oxide between SiO 2 and Si. From the observed result, the relationship between gate leakage and output (transfer) characteristics of OTFTs was discussed.

AB - This paper presents an analysis of the effect of the SiO 2/Si interfacial property on output (transfer) characteristics of organic thin film transistors (OTFTs). A SiO 2 layer was grown on the heavily doped p-type Si wafer using a dry oxidation process as a gate oxide layer. The electrical conduction investigations suggest that the leakage behavior is governed by the poor insulation of the oxygen deficient oxide between SiO 2 and Si. From the observed result, the relationship between gate leakage and output (transfer) characteristics of OTFTs was discussed.

UR - http://www.scopus.com/inward/record.url?scp=84859481188&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84859481188&partnerID=8YFLogxK

U2 - 10.1016/j.mee.2012.03.007

DO - 10.1016/j.mee.2012.03.007

M3 - Article

AN - SCOPUS:84859481188

VL - 96

SP - 24

EP - 28

JO - Microelectronic Engineering

JF - Microelectronic Engineering

SN - 0167-9317

ER -