Effects of dry oxidation of heavily doped p-type Si on output and transfer characteristics in organic thin film transistors

This paper presents an analysis of the effect of the SiO ₂/Si interfacial property on output (transfer) characteristics of organic thin film transistors (OTFTs). A SiO ₂ layer was grown on the heavily doped p-type Si wafer using a dry oxidation process as a gate oxide layer. The electrical conduction investigations suggest that the leakage behavior is governed by the poor insulation of the oxygen deficient oxide between SiO ₂ and Si. From the observed result, the relationship between gate leakage and output (transfer) characteristics of OTFTs was discussed.