Abstract
This paper presents an analysis of the effect of the SiO 2/Si interfacial property on output (transfer) characteristics of organic thin film transistors (OTFTs). A SiO 2 layer was grown on the heavily doped p-type Si wafer using a dry oxidation process as a gate oxide layer. The electrical conduction investigations suggest that the leakage behavior is governed by the poor insulation of the oxygen deficient oxide between SiO 2 and Si. From the observed result, the relationship between gate leakage and output (transfer) characteristics of OTFTs was discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 24-28 |
| Number of pages | 5 |
| Journal | Microelectronic Engineering |
| Volume | 96 |
| DOIs | |
| Publication status | Published - 2012 Aug 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering
Cite this
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Effects of dry oxidation of heavily doped p-type Si on output and transfer characteristics in organic thin film transistors. / Tsai, Ming Ying; Lin, Yow Jon.
In: Microelectronic Engineering, Vol. 96, 01.08.2012, p. 24-28.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effects of dry oxidation of heavily doped p-type Si on output and transfer characteristics in organic thin film transistors
AU - Tsai, Ming Ying
AU - Lin, Yow Jon
PY - 2012/8/1
Y1 - 2012/8/1
N2 - This paper presents an analysis of the effect of the SiO 2/Si interfacial property on output (transfer) characteristics of organic thin film transistors (OTFTs). A SiO 2 layer was grown on the heavily doped p-type Si wafer using a dry oxidation process as a gate oxide layer. The electrical conduction investigations suggest that the leakage behavior is governed by the poor insulation of the oxygen deficient oxide between SiO 2 and Si. From the observed result, the relationship between gate leakage and output (transfer) characteristics of OTFTs was discussed.
AB - This paper presents an analysis of the effect of the SiO 2/Si interfacial property on output (transfer) characteristics of organic thin film transistors (OTFTs). A SiO 2 layer was grown on the heavily doped p-type Si wafer using a dry oxidation process as a gate oxide layer. The electrical conduction investigations suggest that the leakage behavior is governed by the poor insulation of the oxygen deficient oxide between SiO 2 and Si. From the observed result, the relationship between gate leakage and output (transfer) characteristics of OTFTs was discussed.
UR - http://www.scopus.com/inward/record.url?scp=84859481188&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=84859481188&partnerID=8YFLogxK
U2 - 10.1016/j.mee.2012.03.007
DO - 10.1016/j.mee.2012.03.007
M3 - Article
AN - SCOPUS:84859481188
VL - 96
SP - 24
EP - 28
JO - Microelectronic Engineering
JF - Microelectronic Engineering
SN - 0167-9317
ER -