Effects of curing conditions on electrooptical properties of polymer-stabilized liquid crystal Pi cells

Chi Yen Huang, Ri Xin Fung, Ying Ging Lin

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

We analyzed conditions for fabricating zero-bias polymer-stabilized liquid crystal (PSLC) pi cells. A high curing voltage effectively aligns LCs and the polymer networks formed perpendicular to the substrate surface after polymerization, making a cell a low dark state and approaching the saturation voltage rapidly. A low curing intensity generates sparse polymer networks, increasing the bending degree of LCs and therefore increasing the effective birefringence and associated bright state of the cell. A high curing voltage and a very low curing intensity are found to be effective in fabricating a zero-bias PSLC pi cell with a high bright state, a low dark state and therefore a steep transmission vs applied voltage (T-V) curve.

Original languageEnglish
Pages (from-to)5230-5232
Number of pages3
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume46
Issue number8 A
DOIs
Publication statusPublished - 2007 Aug 6

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curing
Liquid crystals
Curing
liquid crystals
polymers
Electric potential
electric potential
Polymers
cells
Birefringence
birefringence
polymerization
Polymerization
saturation
Substrates
curves

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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abstract = "We analyzed conditions for fabricating zero-bias polymer-stabilized liquid crystal (PSLC) pi cells. A high curing voltage effectively aligns LCs and the polymer networks formed perpendicular to the substrate surface after polymerization, making a cell a low dark state and approaching the saturation voltage rapidly. A low curing intensity generates sparse polymer networks, increasing the bending degree of LCs and therefore increasing the effective birefringence and associated bright state of the cell. A high curing voltage and a very low curing intensity are found to be effective in fabricating a zero-bias PSLC pi cell with a high bright state, a low dark state and therefore a steep transmission vs applied voltage (T-V) curve.",
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AU - Fung, Ri Xin

AU - Lin, Ying Ging

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N2 - We analyzed conditions for fabricating zero-bias polymer-stabilized liquid crystal (PSLC) pi cells. A high curing voltage effectively aligns LCs and the polymer networks formed perpendicular to the substrate surface after polymerization, making a cell a low dark state and approaching the saturation voltage rapidly. A low curing intensity generates sparse polymer networks, increasing the bending degree of LCs and therefore increasing the effective birefringence and associated bright state of the cell. A high curing voltage and a very low curing intensity are found to be effective in fabricating a zero-bias PSLC pi cell with a high bright state, a low dark state and therefore a steep transmission vs applied voltage (T-V) curve.

AB - We analyzed conditions for fabricating zero-bias polymer-stabilized liquid crystal (PSLC) pi cells. A high curing voltage effectively aligns LCs and the polymer networks formed perpendicular to the substrate surface after polymerization, making a cell a low dark state and approaching the saturation voltage rapidly. A low curing intensity generates sparse polymer networks, increasing the bending degree of LCs and therefore increasing the effective birefringence and associated bright state of the cell. A high curing voltage and a very low curing intensity are found to be effective in fabricating a zero-bias PSLC pi cell with a high bright state, a low dark state and therefore a steep transmission vs applied voltage (T-V) curve.

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