Abstract
The effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with a ternary Al0.2Ga0.8N or a quaternary AlInGaN electronic blocking layer have been investigated numerically by employing an advanced device simulation program. The simulation results indicate that the characteristics of InGaN quantum-well laser can be improved by using the quaternary AlInGaN electronic blocking layer. When the aluminum and indium compositions in the AlInGaN electronic blocking layer are appropriately designed, the built-in charge density at the interface between the InGaN barrier and the AlInGaN electronic blocking layer can be reduced. Under this circumstance, the electron leakage and threshold current can be decreased obviously as compared with the laser structure with a conventional Al 0.2Ga0.8N electronic blocking layer when the built-in polarization is taken into account in our simulation. On the other hand, the AlInGaN electronic blocking layer also gives higher refractive index than the Al0.2Ga0.8N electronic blocking layer. Therefore, higher quantum-well optical confinement factor can be obtained by using the AlInGaN electronic blocking layer as well.
| Original language | English |
|---|---|
| Title of host publication | Optoelectronic Devices |
| Subtitle of host publication | Physics, Fabrication, and Application III |
| DOIs | |
| Publication status | Published - 2006 Dec 1 |
| Event | Optoelectronic Devices: Physics, Fabrication, and Application III - Boston, MA, United States Duration: 2006 Oct 1 → 2006 Oct 2 |
Publication series
| Name | Proceedings of SPIE - The International Society for Optical Engineering |
|---|---|
| Volume | 6368 |
| ISSN (Print) | 0277-786X |
Other
| Other | Optoelectronic Devices: Physics, Fabrication, and Application III |
|---|---|
| Country | United States |
| City | Boston, MA |
| Period | 06-10-01 → 06-10-02 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Computer Science Applications
- Applied Mathematics
- Electrical and Electronic Engineering
Cite this
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Effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with AlGaN or AlInGaN electronic blocking layers. / Chang, Shu Hsuan; Chen, Jun Rong; Lee, Chung Hsien; Yang, Cheng Hong.
Optoelectronic Devices: Physics, Fabrication, and Application III. 2006. 636813 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6368).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with AlGaN or AlInGaN electronic blocking layers
AU - Chang, Shu Hsuan
AU - Chen, Jun Rong
AU - Lee, Chung Hsien
AU - Yang, Cheng Hong
PY - 2006/12/1
Y1 - 2006/12/1
N2 - The effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with a ternary Al0.2Ga0.8N or a quaternary AlInGaN electronic blocking layer have been investigated numerically by employing an advanced device simulation program. The simulation results indicate that the characteristics of InGaN quantum-well laser can be improved by using the quaternary AlInGaN electronic blocking layer. When the aluminum and indium compositions in the AlInGaN electronic blocking layer are appropriately designed, the built-in charge density at the interface between the InGaN barrier and the AlInGaN electronic blocking layer can be reduced. Under this circumstance, the electron leakage and threshold current can be decreased obviously as compared with the laser structure with a conventional Al 0.2Ga0.8N electronic blocking layer when the built-in polarization is taken into account in our simulation. On the other hand, the AlInGaN electronic blocking layer also gives higher refractive index than the Al0.2Ga0.8N electronic blocking layer. Therefore, higher quantum-well optical confinement factor can be obtained by using the AlInGaN electronic blocking layer as well.
AB - The effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with a ternary Al0.2Ga0.8N or a quaternary AlInGaN electronic blocking layer have been investigated numerically by employing an advanced device simulation program. The simulation results indicate that the characteristics of InGaN quantum-well laser can be improved by using the quaternary AlInGaN electronic blocking layer. When the aluminum and indium compositions in the AlInGaN electronic blocking layer are appropriately designed, the built-in charge density at the interface between the InGaN barrier and the AlInGaN electronic blocking layer can be reduced. Under this circumstance, the electron leakage and threshold current can be decreased obviously as compared with the laser structure with a conventional Al 0.2Ga0.8N electronic blocking layer when the built-in polarization is taken into account in our simulation. On the other hand, the AlInGaN electronic blocking layer also gives higher refractive index than the Al0.2Ga0.8N electronic blocking layer. Therefore, higher quantum-well optical confinement factor can be obtained by using the AlInGaN electronic blocking layer as well.
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U2 - 10.1117/12.685910
DO - 10.1117/12.685910
M3 - Conference contribution
AN - SCOPUS:33846829774
SN - 081946466X
SN - 9780819464668
T3 - Proceedings of SPIE - The International Society for Optical Engineering
BT - Optoelectronic Devices
ER -