Effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with AlGaN or AlInGaN electronic blocking layers

Shu Hsuan Chang, Jun Rong Chen, Chung Hsien Lee, Cheng Hong Yang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

11 Citations (Scopus)

Abstract

The effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with a ternary Al0.2Ga0.8N or a quaternary AlInGaN electronic blocking layer have been investigated numerically by employing an advanced device simulation program. The simulation results indicate that the characteristics of InGaN quantum-well laser can be improved by using the quaternary AlInGaN electronic blocking layer. When the aluminum and indium compositions in the AlInGaN electronic blocking layer are appropriately designed, the built-in charge density at the interface between the InGaN barrier and the AlInGaN electronic blocking layer can be reduced. Under this circumstance, the electron leakage and threshold current can be decreased obviously as compared with the laser structure with a conventional Al 0.2Ga0.8N electronic blocking layer when the built-in polarization is taken into account in our simulation. On the other hand, the AlInGaN electronic blocking layer also gives higher refractive index than the Al0.2Ga0.8N electronic blocking layer. Therefore, higher quantum-well optical confinement factor can be obtained by using the AlInGaN electronic blocking layer as well.

Original languageEnglish
Title of host publicationOptoelectronic Devices
Subtitle of host publicationPhysics, Fabrication, and Application III
DOIs
Publication statusPublished - 2006 Dec 1
EventOptoelectronic Devices: Physics, Fabrication, and Application III - Boston, MA, United States
Duration: 2006 Oct 12006 Oct 2

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume6368
ISSN (Print)0277-786X

Other

OtherOptoelectronic Devices: Physics, Fabrication, and Application III
CountryUnited States
CityBoston, MA
Period06-10-0106-10-02

Fingerprint

AlGaN
InGaN
Quantum well lasers
Overflow
quantum well lasers
Quantum Well
Polarization
Electronics
Laser
Indium
polarization
Charge density
Aluminum
electronics
Semiconductor quantum wells
Refractive index
Electrons
Lasers
Chemical analysis
Device Simulation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Chang, S. H., Chen, J. R., Lee, C. H., & Yang, C. H. (2006). Effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with AlGaN or AlInGaN electronic blocking layers. In Optoelectronic Devices: Physics, Fabrication, and Application III [636813] (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6368). https://doi.org/10.1117/12.685910
Chang, Shu Hsuan ; Chen, Jun Rong ; Lee, Chung Hsien ; Yang, Cheng Hong. / Effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with AlGaN or AlInGaN electronic blocking layers. Optoelectronic Devices: Physics, Fabrication, and Application III. 2006. (Proceedings of SPIE - The International Society for Optical Engineering).
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abstract = "The effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with a ternary Al0.2Ga0.8N or a quaternary AlInGaN electronic blocking layer have been investigated numerically by employing an advanced device simulation program. The simulation results indicate that the characteristics of InGaN quantum-well laser can be improved by using the quaternary AlInGaN electronic blocking layer. When the aluminum and indium compositions in the AlInGaN electronic blocking layer are appropriately designed, the built-in charge density at the interface between the InGaN barrier and the AlInGaN electronic blocking layer can be reduced. Under this circumstance, the electron leakage and threshold current can be decreased obviously as compared with the laser structure with a conventional Al 0.2Ga0.8N electronic blocking layer when the built-in polarization is taken into account in our simulation. On the other hand, the AlInGaN electronic blocking layer also gives higher refractive index than the Al0.2Ga0.8N electronic blocking layer. Therefore, higher quantum-well optical confinement factor can be obtained by using the AlInGaN electronic blocking layer as well.",
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Chang, SH, Chen, JR, Lee, CH & Yang, CH 2006, Effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with AlGaN or AlInGaN electronic blocking layers. in Optoelectronic Devices: Physics, Fabrication, and Application III., 636813, Proceedings of SPIE - The International Society for Optical Engineering, vol. 6368, Optoelectronic Devices: Physics, Fabrication, and Application III, Boston, MA, United States, 06-10-01. https://doi.org/10.1117/12.685910

Effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with AlGaN or AlInGaN electronic blocking layers. / Chang, Shu Hsuan; Chen, Jun Rong; Lee, Chung Hsien; Yang, Cheng Hong.

Optoelectronic Devices: Physics, Fabrication, and Application III. 2006. 636813 (Proceedings of SPIE - The International Society for Optical Engineering; Vol. 6368).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - The effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with a ternary Al0.2Ga0.8N or a quaternary AlInGaN electronic blocking layer have been investigated numerically by employing an advanced device simulation program. The simulation results indicate that the characteristics of InGaN quantum-well laser can be improved by using the quaternary AlInGaN electronic blocking layer. When the aluminum and indium compositions in the AlInGaN electronic blocking layer are appropriately designed, the built-in charge density at the interface between the InGaN barrier and the AlInGaN electronic blocking layer can be reduced. Under this circumstance, the electron leakage and threshold current can be decreased obviously as compared with the laser structure with a conventional Al 0.2Ga0.8N electronic blocking layer when the built-in polarization is taken into account in our simulation. On the other hand, the AlInGaN electronic blocking layer also gives higher refractive index than the Al0.2Ga0.8N electronic blocking layer. Therefore, higher quantum-well optical confinement factor can be obtained by using the AlInGaN electronic blocking layer as well.

AB - The effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with a ternary Al0.2Ga0.8N or a quaternary AlInGaN electronic blocking layer have been investigated numerically by employing an advanced device simulation program. The simulation results indicate that the characteristics of InGaN quantum-well laser can be improved by using the quaternary AlInGaN electronic blocking layer. When the aluminum and indium compositions in the AlInGaN electronic blocking layer are appropriately designed, the built-in charge density at the interface between the InGaN barrier and the AlInGaN electronic blocking layer can be reduced. Under this circumstance, the electron leakage and threshold current can be decreased obviously as compared with the laser structure with a conventional Al 0.2Ga0.8N electronic blocking layer when the built-in polarization is taken into account in our simulation. On the other hand, the AlInGaN electronic blocking layer also gives higher refractive index than the Al0.2Ga0.8N electronic blocking layer. Therefore, higher quantum-well optical confinement factor can be obtained by using the AlInGaN electronic blocking layer as well.

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Chang SH, Chen JR, Lee CH, Yang CH. Effects of built-in polarization and carrier overflow on InGaN quantum-well lasers with AlGaN or AlInGaN electronic blocking layers. In Optoelectronic Devices: Physics, Fabrication, and Application III. 2006. 636813. (Proceedings of SPIE - The International Society for Optical Engineering). https://doi.org/10.1117/12.685910