Abstract
This paper examines CuIn(Se, S) 2 (CISS) films prepared by sputtering precursor films of In, Cu, and In 2S 3 onto Mo coated soda-lime glass, followed by a single-stage selenium annealing process to form a CISS chalcopyrite phase. In this study, S was substituted for Ga to increase the energy gap of CuInSe-based materials. Experimental results reveal that the composition of (S + Se) and S decreased slightly with an increase in the selenium annealing temperature, exhibiting uniform distribution throughout the entire CISS film sample. The resulting CISS film exhibited p-type conductivity with an energy gap of 1.11eV. The optimum selenium annealing condition for the CIGS precursor prepared by sputtering was 798 K for 20 minutes.
| Original language | English |
|---|---|
| Title of host publication | Materials and Computational Mechanics |
| Pages | 1284-1288 |
| Number of pages | 5 |
| DOIs | |
| Publication status | Published - 2012 Jan 1 |
| Event | 2011 International Conference on Applied Mechanics, Materials and Manufacturing, ICAMMM 2011 - Shenzhen, China Duration: 2011 Nov 18 → 2011 Nov 20 |
Publication series
| Name | Applied Mechanics and Materials |
|---|---|
| Volume | 117-119 |
| ISSN (Print) | 1660-9336 |
| ISSN (Electronic) | 1662-7482 |
Other
| Other | 2011 International Conference on Applied Mechanics, Materials and Manufacturing, ICAMMM 2011 |
|---|---|
| Country | China |
| City | Shenzhen |
| Period | 11-11-18 → 11-11-20 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
Cite this
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Effects of annealing temperature on properties of CuIn (Se, S) 2 film prepared by sputtering. / Lin, Yi-Cheng or Y. C.; Chen, Z. J.; Wang, L. C.
Materials and Computational Mechanics. 2012. p. 1284-1288 (Applied Mechanics and Materials; Vol. 117-119).Research output: Chapter in Book/Report/Conference proceeding › Conference contribution
TY - GEN
T1 - Effects of annealing temperature on properties of CuIn (Se, S) 2 film prepared by sputtering
AU - Lin, Yi-Cheng or Y. C.
AU - Chen, Z. J.
AU - Wang, L. C.
PY - 2012/1/1
Y1 - 2012/1/1
N2 - This paper examines CuIn(Se, S) 2 (CISS) films prepared by sputtering precursor films of In, Cu, and In 2S 3 onto Mo coated soda-lime glass, followed by a single-stage selenium annealing process to form a CISS chalcopyrite phase. In this study, S was substituted for Ga to increase the energy gap of CuInSe-based materials. Experimental results reveal that the composition of (S + Se) and S decreased slightly with an increase in the selenium annealing temperature, exhibiting uniform distribution throughout the entire CISS film sample. The resulting CISS film exhibited p-type conductivity with an energy gap of 1.11eV. The optimum selenium annealing condition for the CIGS precursor prepared by sputtering was 798 K for 20 minutes.
AB - This paper examines CuIn(Se, S) 2 (CISS) films prepared by sputtering precursor films of In, Cu, and In 2S 3 onto Mo coated soda-lime glass, followed by a single-stage selenium annealing process to form a CISS chalcopyrite phase. In this study, S was substituted for Ga to increase the energy gap of CuInSe-based materials. Experimental results reveal that the composition of (S + Se) and S decreased slightly with an increase in the selenium annealing temperature, exhibiting uniform distribution throughout the entire CISS film sample. The resulting CISS film exhibited p-type conductivity with an energy gap of 1.11eV. The optimum selenium annealing condition for the CIGS precursor prepared by sputtering was 798 K for 20 minutes.
UR - http://www.scopus.com/inward/record.url?scp=81055144742&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=81055144742&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/AMM.117-119.1284
DO - 10.4028/www.scientific.net/AMM.117-119.1284
M3 - Conference contribution
SN - 9783037852804
T3 - Applied Mechanics and Materials
SP - 1284
EP - 1288
BT - Materials and Computational Mechanics
ER -