Effects of annealing temperature on properties of CuIn (Se, S) 2 film prepared by sputtering

Y. C. Lin, Z. J. Chen, L. C. Wang

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

This paper examines CuIn(Se, S) 2 (CISS) films prepared by sputtering precursor films of In, Cu, and In 2S 3 onto Mo coated soda-lime glass, followed by a single-stage selenium annealing process to form a CISS chalcopyrite phase. In this study, S was substituted for Ga to increase the energy gap of CuInSe-based materials. Experimental results reveal that the composition of (S + Se) and S decreased slightly with an increase in the selenium annealing temperature, exhibiting uniform distribution throughout the entire CISS film sample. The resulting CISS film exhibited p-type conductivity with an energy gap of 1.11eV. The optimum selenium annealing condition for the CIGS precursor prepared by sputtering was 798 K for 20 minutes.

Original languageEnglish
Title of host publicationMaterials and Computational Mechanics
Pages1284-1288
Number of pages5
DOIs
Publication statusPublished - 2012
Event2011 International Conference on Applied Mechanics, Materials and Manufacturing, ICAMMM 2011 - Shenzhen, China
Duration: 2011 Nov 182011 Nov 20

Publication series

NameApplied Mechanics and Materials
Volume117-119
ISSN (Print)1660-9336
ISSN (Electronic)1662-7482

Other

Other2011 International Conference on Applied Mechanics, Materials and Manufacturing, ICAMMM 2011
CountryChina
CityShenzhen
Period11-11-1811-11-20

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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