TY - GEN
T1 - Effects of annealing temperature on properties of CuIn (Se, S) 2 film prepared by sputtering
AU - Lin, Y. C.
AU - Chen, Z. J.
AU - Wang, L. C.
N1 - Copyright:
Copyright 2012 Elsevier B.V., All rights reserved.
PY - 2012
Y1 - 2012
N2 - This paper examines CuIn(Se, S) 2 (CISS) films prepared by sputtering precursor films of In, Cu, and In 2S 3 onto Mo coated soda-lime glass, followed by a single-stage selenium annealing process to form a CISS chalcopyrite phase. In this study, S was substituted for Ga to increase the energy gap of CuInSe-based materials. Experimental results reveal that the composition of (S + Se) and S decreased slightly with an increase in the selenium annealing temperature, exhibiting uniform distribution throughout the entire CISS film sample. The resulting CISS film exhibited p-type conductivity with an energy gap of 1.11eV. The optimum selenium annealing condition for the CIGS precursor prepared by sputtering was 798 K for 20 minutes.
AB - This paper examines CuIn(Se, S) 2 (CISS) films prepared by sputtering precursor films of In, Cu, and In 2S 3 onto Mo coated soda-lime glass, followed by a single-stage selenium annealing process to form a CISS chalcopyrite phase. In this study, S was substituted for Ga to increase the energy gap of CuInSe-based materials. Experimental results reveal that the composition of (S + Se) and S decreased slightly with an increase in the selenium annealing temperature, exhibiting uniform distribution throughout the entire CISS film sample. The resulting CISS film exhibited p-type conductivity with an energy gap of 1.11eV. The optimum selenium annealing condition for the CIGS precursor prepared by sputtering was 798 K for 20 minutes.
UR - http://www.scopus.com/inward/record.url?scp=81055144742&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=81055144742&partnerID=8YFLogxK
U2 - 10.4028/www.scientific.net/AMM.117-119.1284
DO - 10.4028/www.scientific.net/AMM.117-119.1284
M3 - Conference contribution
AN - SCOPUS:81055144742
SN - 9783037852804
T3 - Applied Mechanics and Materials
SP - 1284
EP - 1288
BT - Materials and Computational Mechanics
T2 - 2011 International Conference on Applied Mechanics, Materials and Manufacturing, ICAMMM 2011
Y2 - 18 November 2011 through 20 November 2011
ER -