Effects of annealing temperature on properties of CuIn (Se, S) 2 film prepared by sputtering

Y. C. Lin; Z. J. Chen; L. C. Wang

doi:10.4028/www.scientific.net/AMM.117-119.1284

Effects of annealing temperature on properties of CuIn (Se, S) ₂ film prepared by sputtering

Y. C. Lin, Z. J. Chen, L. C. Wang

Department of Mechatronic Engineering

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This paper examines CuIn(Se, S) ₂ (CISS) films prepared by sputtering precursor films of In, Cu, and In ₂S ₃ onto Mo coated soda-lime glass, followed by a single-stage selenium annealing process to form a CISS chalcopyrite phase. In this study, S was substituted for Ga to increase the energy gap of CuInSe-based materials. Experimental results reveal that the composition of (S + Se) and S decreased slightly with an increase in the selenium annealing temperature, exhibiting uniform distribution throughout the entire CISS film sample. The resulting CISS film exhibited p-type conductivity with an energy gap of 1.11eV. The optimum selenium annealing condition for the CIGS precursor prepared by sputtering was 798 K for 20 minutes.

Original language	English
Title of host publication	Materials and Computational Mechanics
Pages	1284-1288
Number of pages	5
DOIs	https://doi.org/10.4028/www.scientific.net/AMM.117-119.1284
Publication status	Published - 2012 Jan 1
Event	2011 International Conference on Applied Mechanics, Materials and Manufacturing, ICAMMM 2011 - Shenzhen, China Duration: 2011 Nov 18 → 2011 Nov 20

Publication series

Name	Applied Mechanics and Materials
Volume	117-119
ISSN (Print)	1660-9336
ISSN (Electronic)	1662-7482

Other

Other	2011 International Conference on Applied Mechanics, Materials and Manufacturing, ICAMMM 2011
Country	China
City	Shenzhen
Period	11-11-18 → 11-11-20

All Science Journal Classification (ASJC) codes

Engineering(all)

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Lin, Y. C., Chen, Z. J., & Wang, L. C. (2012). Effects of annealing temperature on properties of CuIn (Se, S) ₂ film prepared by sputtering. In Materials and Computational Mechanics (pp. 1284-1288). (Applied Mechanics and Materials; Vol. 117-119). https://doi.org/10.4028/www.scientific.net/AMM.117-119.1284

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title = "Effects of annealing temperature on properties of CuIn (Se, S) 2 film prepared by sputtering",

abstract = "This paper examines CuIn(Se, S) 2 (CISS) films prepared by sputtering precursor films of In, Cu, and In 2S 3 onto Mo coated soda-lime glass, followed by a single-stage selenium annealing process to form a CISS chalcopyrite phase. In this study, S was substituted for Ga to increase the energy gap of CuInSe-based materials. Experimental results reveal that the composition of (S + Se) and S decreased slightly with an increase in the selenium annealing temperature, exhibiting uniform distribution throughout the entire CISS film sample. The resulting CISS film exhibited p-type conductivity with an energy gap of 1.11eV. The optimum selenium annealing condition for the CIGS precursor prepared by sputtering was 798 K for 20 minutes.",

author = "Lin, {Y. C.} and Chen, {Z. J.} and Wang, {L. C.}",

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Lin, YC, Chen, ZJ & Wang, LC 2012, Effects of annealing temperature on properties of CuIn (Se, S) ₂ film prepared by sputtering. in Materials and Computational Mechanics. Applied Mechanics and Materials, vol. 117-119, pp. 1284-1288, 2011 International Conference on Applied Mechanics, Materials and Manufacturing, ICAMMM 2011, Shenzhen, China, 11-11-18. https://doi.org/10.4028/www.scientific.net/AMM.117-119.1284

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AU - Lin, Y. C.

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AU - Wang, L. C.

PY - 2012/1/1

Y1 - 2012/1/1

N2 - This paper examines CuIn(Se, S) 2 (CISS) films prepared by sputtering precursor films of In, Cu, and In 2S 3 onto Mo coated soda-lime glass, followed by a single-stage selenium annealing process to form a CISS chalcopyrite phase. In this study, S was substituted for Ga to increase the energy gap of CuInSe-based materials. Experimental results reveal that the composition of (S + Se) and S decreased slightly with an increase in the selenium annealing temperature, exhibiting uniform distribution throughout the entire CISS film sample. The resulting CISS film exhibited p-type conductivity with an energy gap of 1.11eV. The optimum selenium annealing condition for the CIGS precursor prepared by sputtering was 798 K for 20 minutes.

AB - This paper examines CuIn(Se, S) 2 (CISS) films prepared by sputtering precursor films of In, Cu, and In 2S 3 onto Mo coated soda-lime glass, followed by a single-stage selenium annealing process to form a CISS chalcopyrite phase. In this study, S was substituted for Ga to increase the energy gap of CuInSe-based materials. Experimental results reveal that the composition of (S + Se) and S decreased slightly with an increase in the selenium annealing temperature, exhibiting uniform distribution throughout the entire CISS film sample. The resulting CISS film exhibited p-type conductivity with an energy gap of 1.11eV. The optimum selenium annealing condition for the CIGS precursor prepared by sputtering was 798 K for 20 minutes.

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