Effects of Al doping on the responsivity of solar irradiation of devices that use ZnO nanoparticles

Yow Jon Lin, Yao Ming Chen

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

The effect of Al doping on the responsivity to solar irradiation and the response time for devices that use ZnO nanoparticles is studied. The incorporation of Al into ZnO nanoparticles leads to a reduction in the particle size, which causes an increase in the number of oxygen vacancies (VO) and the introduction of Al-ions into the lattice of ZnO. Al-doped ZnO nanoparticles are responsive because there is an increase in the visible-emission absorption. A correlation between the incorporation of Al, the VO density and the photocurrent is determined, which allows the sensitivity of ZnO nanoparticles to solar irradiation to be tuned.

Original languageEnglish
Pages (from-to)10205-10211
Number of pages7
JournalJournal of Materials Science: Materials in Electronics
Volume28
Issue number14
DOIs
Publication statusPublished - 2017 Jul 1

Fingerprint

Doping (additives)
Irradiation
Nanoparticles
nanoparticles
irradiation
Oxygen vacancies
Photocurrents
photocurrents
Particle size
Ions
causes
sensitivity
oxygen
ions

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Electrical and Electronic Engineering

Cite this

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Effects of Al doping on the responsivity of solar irradiation of devices that use ZnO nanoparticles. / Lin, Yow Jon; Chen, Yao Ming.

In: Journal of Materials Science: Materials in Electronics, Vol. 28, No. 14, 01.07.2017, p. 10205-10211.

Research output: Contribution to journalArticle

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