Effects of a metallic front gate on the temperature-dependent electronic property of pentacene films

Yow-Jon Lin, Hou Yen Tsao, Day Shan Liu

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

The effect of a metallic front gate on the temperature-dependent electronic property of pentacene films was investigated in this study. The carrier mobility exhibits strong temperature dependence, implying the dominance of tunneling (hopping) at low (high) temperatures. The room-temperature mobility was drastically increased by capping an In (Au) layer on the pentacene front surface. However, the carrier concentration is not affected. An increase in the phonon energy occurs for In-capped or Au-capped pentacene samples, which corresponds to the abrupt transition to the nonlocal electron-phonon coupling. The enhanced mobility by capping a metal layer is attributed to a change in the electron-phonon coupling.

Original languageEnglish
Pages (from-to)431-434
Number of pages4
JournalMaterials Chemistry and Physics
Volume148
Issue number1-2
DOIs
Publication statusPublished - 2014 Nov 14

Fingerprint

Electronic properties
carrier mobility
electronics
electrons
Temperature
temperature dependence
temperature
Electrons
Carrier mobility
room temperature
Electron transitions
metals
Carrier concentration
Metals
pentacene
energy

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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Effects of a metallic front gate on the temperature-dependent electronic property of pentacene films. / Lin, Yow-Jon; Tsao, Hou Yen; Liu, Day Shan.

In: Materials Chemistry and Physics, Vol. 148, No. 1-2, 14.11.2014, p. 431-434.

Research output: Contribution to journalArticle

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