Effect on structural, optical and electrical properties of aluminum-doped zinc oxide films using diode laser annealing

Wen Tse Hsiao, Shih Feng Tseng, Chien Kai Chung, Donyau Chiang, Kuo Cheng Huang, Keh Moh Lin, Liang Yan Li, Ming Fei Chen

Research output: Contribution to journalArticle

12 Citations (Scopus)

Abstract

This study investigated the laser annealing characteristics of aluminum-doped zinc oxide (AZO) films using a diode laser source (808 nm) combined with moving stage with varying parameters, including laser fluence and speed of moving stage in air atmosphere. The commercial AZO thin films were prepared by RF magnetron sputtering on glass substrates. The films characteristics were systematically analyzed using a field emission scanning electron microscope, an atomic force microscope (AFM), an X-ray diffraction (XRD) equipment, an ultraviolet-visible-near-infrared (UV-vis-NIR) spectrophotometer, a four points probe instrument, and a Hall effect measurement system. The experimental results indicate that varying the laser fluence and annealing speed affected the optical, electrical, and structural characteristics of the AZO films. After annealing, approximately 90% of transmittance spectra exhibited slight changes in the visible region. All resistivity values of the laser-annealed AZO films decreased substantially from 4×10-2 Ω cm to 2.8×10-2 Ω cm. The absorption band edge moved toward shorter or longer wavelengths, depending on the annealing laser fluence and annealing speed. The optical energy band gap of the annealed AZO films increased because the carrier concentration of the annealed AZO films increased. The grain size increased in conjunction with the annealing speed. The AFM-derived root mean square (RMS) values decreased as the annealing speed increased, and the corresponding RMS values ranged from 1.4 to 1.9 nm.

Original languageEnglish
Pages (from-to)41-47
Number of pages7
JournalOptics and Laser Technology
Volume68
DOIs
Publication statusPublished - 2015 May

Fingerprint

Zinc Oxide
laser annealing
Zinc oxide
Aluminum
zinc oxides
Oxide films
Semiconductor lasers
oxide films
Structural properties
Electric properties
Optical properties
diodes
electrical properties
Annealing
aluminum
optical properties
annealing
mean square values
Lasers
fluence

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Electrical and Electronic Engineering

Cite this

Hsiao, Wen Tse ; Tseng, Shih Feng ; Chung, Chien Kai ; Chiang, Donyau ; Huang, Kuo Cheng ; Lin, Keh Moh ; Li, Liang Yan ; Chen, Ming Fei. / Effect on structural, optical and electrical properties of aluminum-doped zinc oxide films using diode laser annealing. In: Optics and Laser Technology. 2015 ; Vol. 68. pp. 41-47.
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abstract = "This study investigated the laser annealing characteristics of aluminum-doped zinc oxide (AZO) films using a diode laser source (808 nm) combined with moving stage with varying parameters, including laser fluence and speed of moving stage in air atmosphere. The commercial AZO thin films were prepared by RF magnetron sputtering on glass substrates. The films characteristics were systematically analyzed using a field emission scanning electron microscope, an atomic force microscope (AFM), an X-ray diffraction (XRD) equipment, an ultraviolet-visible-near-infrared (UV-vis-NIR) spectrophotometer, a four points probe instrument, and a Hall effect measurement system. The experimental results indicate that varying the laser fluence and annealing speed affected the optical, electrical, and structural characteristics of the AZO films. After annealing, approximately 90{\%} of transmittance spectra exhibited slight changes in the visible region. All resistivity values of the laser-annealed AZO films decreased substantially from 4×10-2 Ω cm to 2.8×10-2 Ω cm. The absorption band edge moved toward shorter or longer wavelengths, depending on the annealing laser fluence and annealing speed. The optical energy band gap of the annealed AZO films increased because the carrier concentration of the annealed AZO films increased. The grain size increased in conjunction with the annealing speed. The AFM-derived root mean square (RMS) values decreased as the annealing speed increased, and the corresponding RMS values ranged from 1.4 to 1.9 nm.",
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Effect on structural, optical and electrical properties of aluminum-doped zinc oxide films using diode laser annealing. / Hsiao, Wen Tse; Tseng, Shih Feng; Chung, Chien Kai; Chiang, Donyau; Huang, Kuo Cheng; Lin, Keh Moh; Li, Liang Yan; Chen, Ming Fei.

In: Optics and Laser Technology, Vol. 68, 05.2015, p. 41-47.

Research output: Contribution to journalArticle

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AU - Tseng, Shih Feng

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AU - Chen, Ming Fei

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AB - This study investigated the laser annealing characteristics of aluminum-doped zinc oxide (AZO) films using a diode laser source (808 nm) combined with moving stage with varying parameters, including laser fluence and speed of moving stage in air atmosphere. The commercial AZO thin films were prepared by RF magnetron sputtering on glass substrates. The films characteristics were systematically analyzed using a field emission scanning electron microscope, an atomic force microscope (AFM), an X-ray diffraction (XRD) equipment, an ultraviolet-visible-near-infrared (UV-vis-NIR) spectrophotometer, a four points probe instrument, and a Hall effect measurement system. The experimental results indicate that varying the laser fluence and annealing speed affected the optical, electrical, and structural characteristics of the AZO films. After annealing, approximately 90% of transmittance spectra exhibited slight changes in the visible region. All resistivity values of the laser-annealed AZO films decreased substantially from 4×10-2 Ω cm to 2.8×10-2 Ω cm. The absorption band edge moved toward shorter or longer wavelengths, depending on the annealing laser fluence and annealing speed. The optical energy band gap of the annealed AZO films increased because the carrier concentration of the annealed AZO films increased. The grain size increased in conjunction with the annealing speed. The AFM-derived root mean square (RMS) values decreased as the annealing speed increased, and the corresponding RMS values ranged from 1.4 to 1.9 nm.

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