Effect of transient annealing on patterned CoFeB-based magnetic tunnel junctions

Kuo Ming Wu, Chao Hsien Huang, Shiao Chi Lin, Ming Jer Kao, Ming Jinn Tsai, Jong Ching Wu, Lance Horng

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Abstract

In this study, the transient annealing effect on the switching behavior of microstructured Co 60Fe 20B 20-based magnetic tunnel junctions has been studied through magnetoresistacne measurements (R-H loop). Elliptical shape of devices with long/short axis of 4/2 micrometers was patterned out of sheet film stack of: Ta (20)/ PtMn (15)/ CoFeB (3)/ Al (0.7)-oxide/ CoFeB (2)1 Ru (8)/ Ta (40) (thickness unit in nanometers) after a conventional long time field cooling annealing. The transient annealing was then executed by sample loading into a furnace with pre-set temperatures ranging from 100 to 400 °C for only 5 minutes in the absence of any external magnetic field. The vortex-like reverse of free layer in as-etched MTJ evidently changes to single-domain-like reverser after 200-250 °C transient annealing. The magnetoresistance was found to increase with increasing annealing temperatures up to 265 °C and then slowly decrease at higher annealing temperatures. The transient thermal annealing creates obvious efforts to repair magnetic properties of MTJ cell befor 265 °C annealing and results in less damage at temperature of 350 °C and 400 °C.

Original languageEnglish
Pages (from-to)3934-3937
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume204
Issue number12
DOIs
Publication statusPublished - 2007 Dec 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

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