Effect of transient annealing on patterned CoFeB-based magnetic tunnel junctions

Kuo Ming Wu, Chao Hsien Huang, Shiao Chi Lin, Ming Jer Kao, Ming Jinn Tsai, Jong-Ching Wu, Lance Horng

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

In this study, the transient annealing effect on the switching behavior of microstructured Co 60Fe 20B 20-based magnetic tunnel junctions has been studied through magnetoresistacne measurements (R-H loop). Elliptical shape of devices with long/short axis of 4/2 micrometers was patterned out of sheet film stack of: Ta (20)/ PtMn (15)/ CoFeB (3)/ Al (0.7)-oxide/ CoFeB (2)1 Ru (8)/ Ta (40) (thickness unit in nanometers) after a conventional long time field cooling annealing. The transient annealing was then executed by sample loading into a furnace with pre-set temperatures ranging from 100 to 400 °C for only 5 minutes in the absence of any external magnetic field. The vortex-like reverse of free layer in as-etched MTJ evidently changes to single-domain-like reverser after 200-250 °C transient annealing. The magnetoresistance was found to increase with increasing annealing temperatures up to 265 °C and then slowly decrease at higher annealing temperatures. The transient thermal annealing creates obvious efforts to repair magnetic properties of MTJ cell befor 265 °C annealing and results in less damage at temperature of 350 °C and 400 °C.

Original languageEnglish
Pages (from-to)3934-3937
Number of pages4
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume204
Issue number12
DOIs
Publication statusPublished - 2007 Dec 1

Fingerprint

Tunnel junctions
tunnel junctions
Annealing
annealing
Temperature
temperature
Magnetoresistance
Oxides
furnaces
micrometers
Magnetic properties
Furnaces
Vortex flow
Repair
vortices
Magnetic fields
magnetic properties
damage
Cooling
cooling

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

Wu, Kuo Ming ; Huang, Chao Hsien ; Lin, Shiao Chi ; Kao, Ming Jer ; Tsai, Ming Jinn ; Wu, Jong-Ching ; Horng, Lance. / Effect of transient annealing on patterned CoFeB-based magnetic tunnel junctions. In: Physica Status Solidi (A) Applications and Materials Science. 2007 ; Vol. 204, No. 12. pp. 3934-3937.
@article{b5e75fa772c14aea9145ed673a9d64b3,
title = "Effect of transient annealing on patterned CoFeB-based magnetic tunnel junctions",
abstract = "In this study, the transient annealing effect on the switching behavior of microstructured Co 60Fe 20B 20-based magnetic tunnel junctions has been studied through magnetoresistacne measurements (R-H loop). Elliptical shape of devices with long/short axis of 4/2 micrometers was patterned out of sheet film stack of: Ta (20)/ PtMn (15)/ CoFeB (3)/ Al (0.7)-oxide/ CoFeB (2)1 Ru (8)/ Ta (40) (thickness unit in nanometers) after a conventional long time field cooling annealing. The transient annealing was then executed by sample loading into a furnace with pre-set temperatures ranging from 100 to 400 °C for only 5 minutes in the absence of any external magnetic field. The vortex-like reverse of free layer in as-etched MTJ evidently changes to single-domain-like reverser after 200-250 °C transient annealing. The magnetoresistance was found to increase with increasing annealing temperatures up to 265 °C and then slowly decrease at higher annealing temperatures. The transient thermal annealing creates obvious efforts to repair magnetic properties of MTJ cell befor 265 °C annealing and results in less damage at temperature of 350 °C and 400 °C.",
author = "Wu, {Kuo Ming} and Huang, {Chao Hsien} and Lin, {Shiao Chi} and Kao, {Ming Jer} and Tsai, {Ming Jinn} and Jong-Ching Wu and Lance Horng",
year = "2007",
month = "12",
day = "1",
doi = "10.1002/pssa.200777329",
language = "English",
volume = "204",
pages = "3934--3937",
journal = "Physica Status Solidi (A) Applications and Materials Science",
issn = "1862-6300",
publisher = "Wiley-VCH Verlag",
number = "12",

}

Effect of transient annealing on patterned CoFeB-based magnetic tunnel junctions. / Wu, Kuo Ming; Huang, Chao Hsien; Lin, Shiao Chi; Kao, Ming Jer; Tsai, Ming Jinn; Wu, Jong-Ching; Horng, Lance.

In: Physica Status Solidi (A) Applications and Materials Science, Vol. 204, No. 12, 01.12.2007, p. 3934-3937.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Effect of transient annealing on patterned CoFeB-based magnetic tunnel junctions

AU - Wu, Kuo Ming

AU - Huang, Chao Hsien

AU - Lin, Shiao Chi

AU - Kao, Ming Jer

AU - Tsai, Ming Jinn

AU - Wu, Jong-Ching

AU - Horng, Lance

PY - 2007/12/1

Y1 - 2007/12/1

N2 - In this study, the transient annealing effect on the switching behavior of microstructured Co 60Fe 20B 20-based magnetic tunnel junctions has been studied through magnetoresistacne measurements (R-H loop). Elliptical shape of devices with long/short axis of 4/2 micrometers was patterned out of sheet film stack of: Ta (20)/ PtMn (15)/ CoFeB (3)/ Al (0.7)-oxide/ CoFeB (2)1 Ru (8)/ Ta (40) (thickness unit in nanometers) after a conventional long time field cooling annealing. The transient annealing was then executed by sample loading into a furnace with pre-set temperatures ranging from 100 to 400 °C for only 5 minutes in the absence of any external magnetic field. The vortex-like reverse of free layer in as-etched MTJ evidently changes to single-domain-like reverser after 200-250 °C transient annealing. The magnetoresistance was found to increase with increasing annealing temperatures up to 265 °C and then slowly decrease at higher annealing temperatures. The transient thermal annealing creates obvious efforts to repair magnetic properties of MTJ cell befor 265 °C annealing and results in less damage at temperature of 350 °C and 400 °C.

AB - In this study, the transient annealing effect on the switching behavior of microstructured Co 60Fe 20B 20-based magnetic tunnel junctions has been studied through magnetoresistacne measurements (R-H loop). Elliptical shape of devices with long/short axis of 4/2 micrometers was patterned out of sheet film stack of: Ta (20)/ PtMn (15)/ CoFeB (3)/ Al (0.7)-oxide/ CoFeB (2)1 Ru (8)/ Ta (40) (thickness unit in nanometers) after a conventional long time field cooling annealing. The transient annealing was then executed by sample loading into a furnace with pre-set temperatures ranging from 100 to 400 °C for only 5 minutes in the absence of any external magnetic field. The vortex-like reverse of free layer in as-etched MTJ evidently changes to single-domain-like reverser after 200-250 °C transient annealing. The magnetoresistance was found to increase with increasing annealing temperatures up to 265 °C and then slowly decrease at higher annealing temperatures. The transient thermal annealing creates obvious efforts to repair magnetic properties of MTJ cell befor 265 °C annealing and results in less damage at temperature of 350 °C and 400 °C.

UR - http://www.scopus.com/inward/record.url?scp=38049108512&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=38049108512&partnerID=8YFLogxK

U2 - 10.1002/pssa.200777329

DO - 10.1002/pssa.200777329

M3 - Article

VL - 204

SP - 3934

EP - 3937

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

SN - 1862-6300

IS - 12

ER -