Effect of thermal annealing on a-plane GaN grown on r-plane sapphire

Tsung-Shine Ko, Tien Chang Lu, Jung Ron Chen, Sin Liang Ou, Chia Ming Chang, Hau Chung Kuo, Der-Yuh Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The crystal quality improvement of a-plane GaN grown on r-plane sapphire was demonstrated by applying thermal annealing on as-grown samples in nitrogen ambient. The root mean square roughness of the 1000 °C-annealed a-plane GaN was only 0.4 nm measured by atomic force microscopy. Transmission electron microscopy results further indicate threading dislocations were decreased from 5×1010 cm-2 to 1.5×1010 cm-2 along [0001]GaN and stacking faults were decreased from 8.7× 105 cm-1 to 4.8× 105 cm-1 after the sample was annealed at 1000 °C. Room temperature photo luminescence measurements showed band edge emission intensity was enhanced up to 2.6 folds compared to the regular a-plane GaN film. Furthermore, corresponding cathode luminescence images reveal larger emission area for a-plane GaN with annealing than those without annealing, which was attributed to reduction of the nonradiative recombination centers. A series of experiments confirm this annealing process could be useful for further applications of GaN-based optoelectric devices.

Original languageEnglish
Title of host publication2014 IEEE International Nanoelectronics Conference, INEC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479950379
DOIs
Publication statusPublished - 2016 Apr 26
EventIEEE International Nanoelectronics Conference, INEC 2014 - Sapporo, Japan
Duration: 2014 Jul 282014 Jul 31

Publication series

Name2014 IEEE International Nanoelectronics Conference, INEC 2014

Other

OtherIEEE International Nanoelectronics Conference, INEC 2014
CountryJapan
CitySapporo
Period14-07-2814-07-31

Fingerprint

Sapphire
Annealing
Stacking faults
Luminescence
Atomic force microscopy
Photoluminescence
Cathodes
Surface roughness
Transmission electron microscopy
Nitrogen
Crystals
Hot Temperature
Experiments
Temperature

All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Ko, T-S., Lu, T. C., Chen, J. R., Ou, S. L., Chang, C. M., Kuo, H. C., & Lin, D-Y. (2016). Effect of thermal annealing on a-plane GaN grown on r-plane sapphire. In 2014 IEEE International Nanoelectronics Conference, INEC 2014 [7460461] (2014 IEEE International Nanoelectronics Conference, INEC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INEC.2014.7460461
Ko, Tsung-Shine ; Lu, Tien Chang ; Chen, Jung Ron ; Ou, Sin Liang ; Chang, Chia Ming ; Kuo, Hau Chung ; Lin, Der-Yuh. / Effect of thermal annealing on a-plane GaN grown on r-plane sapphire. 2014 IEEE International Nanoelectronics Conference, INEC 2014. Institute of Electrical and Electronics Engineers Inc., 2016. (2014 IEEE International Nanoelectronics Conference, INEC 2014).
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title = "Effect of thermal annealing on a-plane GaN grown on r-plane sapphire",
abstract = "The crystal quality improvement of a-plane GaN grown on r-plane sapphire was demonstrated by applying thermal annealing on as-grown samples in nitrogen ambient. The root mean square roughness of the 1000 °C-annealed a-plane GaN was only 0.4 nm measured by atomic force microscopy. Transmission electron microscopy results further indicate threading dislocations were decreased from 5×1010 cm-2 to 1.5×1010 cm-2 along [0001]GaN and stacking faults were decreased from 8.7× 105 cm-1 to 4.8× 105 cm-1 after the sample was annealed at 1000 °C. Room temperature photo luminescence measurements showed band edge emission intensity was enhanced up to 2.6 folds compared to the regular a-plane GaN film. Furthermore, corresponding cathode luminescence images reveal larger emission area for a-plane GaN with annealing than those without annealing, which was attributed to reduction of the nonradiative recombination centers. A series of experiments confirm this annealing process could be useful for further applications of GaN-based optoelectric devices.",
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Ko, T-S, Lu, TC, Chen, JR, Ou, SL, Chang, CM, Kuo, HC & Lin, D-Y 2016, Effect of thermal annealing on a-plane GaN grown on r-plane sapphire. in 2014 IEEE International Nanoelectronics Conference, INEC 2014., 7460461, 2014 IEEE International Nanoelectronics Conference, INEC 2014, Institute of Electrical and Electronics Engineers Inc., IEEE International Nanoelectronics Conference, INEC 2014, Sapporo, Japan, 14-07-28. https://doi.org/10.1109/INEC.2014.7460461

Effect of thermal annealing on a-plane GaN grown on r-plane sapphire. / Ko, Tsung-Shine; Lu, Tien Chang; Chen, Jung Ron; Ou, Sin Liang; Chang, Chia Ming; Kuo, Hau Chung; Lin, Der-Yuh.

2014 IEEE International Nanoelectronics Conference, INEC 2014. Institute of Electrical and Electronics Engineers Inc., 2016. 7460461 (2014 IEEE International Nanoelectronics Conference, INEC 2014).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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N2 - The crystal quality improvement of a-plane GaN grown on r-plane sapphire was demonstrated by applying thermal annealing on as-grown samples in nitrogen ambient. The root mean square roughness of the 1000 °C-annealed a-plane GaN was only 0.4 nm measured by atomic force microscopy. Transmission electron microscopy results further indicate threading dislocations were decreased from 5×1010 cm-2 to 1.5×1010 cm-2 along [0001]GaN and stacking faults were decreased from 8.7× 105 cm-1 to 4.8× 105 cm-1 after the sample was annealed at 1000 °C. Room temperature photo luminescence measurements showed band edge emission intensity was enhanced up to 2.6 folds compared to the regular a-plane GaN film. Furthermore, corresponding cathode luminescence images reveal larger emission area for a-plane GaN with annealing than those without annealing, which was attributed to reduction of the nonradiative recombination centers. A series of experiments confirm this annealing process could be useful for further applications of GaN-based optoelectric devices.

AB - The crystal quality improvement of a-plane GaN grown on r-plane sapphire was demonstrated by applying thermal annealing on as-grown samples in nitrogen ambient. The root mean square roughness of the 1000 °C-annealed a-plane GaN was only 0.4 nm measured by atomic force microscopy. Transmission electron microscopy results further indicate threading dislocations were decreased from 5×1010 cm-2 to 1.5×1010 cm-2 along [0001]GaN and stacking faults were decreased from 8.7× 105 cm-1 to 4.8× 105 cm-1 after the sample was annealed at 1000 °C. Room temperature photo luminescence measurements showed band edge emission intensity was enhanced up to 2.6 folds compared to the regular a-plane GaN film. Furthermore, corresponding cathode luminescence images reveal larger emission area for a-plane GaN with annealing than those without annealing, which was attributed to reduction of the nonradiative recombination centers. A series of experiments confirm this annealing process could be useful for further applications of GaN-based optoelectric devices.

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Ko T-S, Lu TC, Chen JR, Ou SL, Chang CM, Kuo HC et al. Effect of thermal annealing on a-plane GaN grown on r-plane sapphire. In 2014 IEEE International Nanoelectronics Conference, INEC 2014. Institute of Electrical and Electronics Engineers Inc. 2016. 7460461. (2014 IEEE International Nanoelectronics Conference, INEC 2014). https://doi.org/10.1109/INEC.2014.7460461