Effect of thermal annealing on a-plane GaN grown on r-plane sapphire

Tsung-Shine Ko, Tien Chang Lu, Jung Ron Chen, Sin Liang Ou, Chia Ming Chang, Hau Chung Kuo, Der-Yuh Lin

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The crystal quality improvement of a-plane GaN grown on r-plane sapphire was demonstrated by applying thermal annealing on as-grown samples in nitrogen ambient. The root mean square roughness of the 1000 °C-annealed a-plane GaN was only 0.4 nm measured by atomic force microscopy. Transmission electron microscopy results further indicate threading dislocations were decreased from 5×1010 cm-2 to 1.5×1010 cm-2 along [0001]GaN and stacking faults were decreased from 8.7× 105 cm-1 to 4.8× 105 cm-1 after the sample was annealed at 1000 °C. Room temperature photo luminescence measurements showed band edge emission intensity was enhanced up to 2.6 folds compared to the regular a-plane GaN film. Furthermore, corresponding cathode luminescence images reveal larger emission area for a-plane GaN with annealing than those without annealing, which was attributed to reduction of the nonradiative recombination centers. A series of experiments confirm this annealing process could be useful for further applications of GaN-based optoelectric devices.

Original languageEnglish
Title of host publication2014 IEEE International Nanoelectronics Conference, INEC 2014
PublisherInstitute of Electrical and Electronics Engineers Inc.
ISBN (Electronic)9781479950379
DOIs
Publication statusPublished - 2016 Apr 26
EventIEEE International Nanoelectronics Conference, INEC 2014 - Sapporo, Japan
Duration: 2014 Jul 282014 Jul 31

Publication series

Name2014 IEEE International Nanoelectronics Conference, INEC 2014

Other

OtherIEEE International Nanoelectronics Conference, INEC 2014
CountryJapan
CitySapporo
Period14-07-2814-07-31

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering

Cite this

Ko, T-S., Lu, T. C., Chen, J. R., Ou, S. L., Chang, C. M., Kuo, H. C., & Lin, D-Y. (2016). Effect of thermal annealing on a-plane GaN grown on r-plane sapphire. In 2014 IEEE International Nanoelectronics Conference, INEC 2014 [7460461] (2014 IEEE International Nanoelectronics Conference, INEC 2014). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/INEC.2014.7460461