Effect of the stacked structure on performance in CZTSSe thin film solar cells

Li Ching Wang, Yi-Cheng or Y. C. Lin

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

This study investigated the influence of stacked structures on the formation of secondary phases, as pertaining to the performance of Cu 2 ZnSn(S,Se) 4 (CZTSSe) thin film solar cells. Absorber layer precursors of ZnS/Cu/Sn (Sample A) and ZnS/Cu/Sn/Cu/Sn (Sample B) were prepared by sputtering and selenization. Secondary phases of Cu 2 SnSe 3 , Cu 2-x S and ZnS were observed at the bottom of the absorber layer in Sample A, while only ZnS secondary phases appeared in the absorber layer of Sample B. The structure of stacked precursors was shown to have a significant influence on the formation of secondary phases as well as the crystal quality of the CZTSSe absorber layer. CZTSSe thin film solar cells were prepared from a structure of glass/Mo/CZTSSe/CdS/ZnO:Al/Al. Sample B demonstrated cell efficiency of 2.4%, which is far superior to the 0.75% efficiency of Sample A. The existence of Cu 2-x S and Cu 2 SnSe 3 secondary phases degraded the crystal quality of the absorber layer and increased the number of defects in the crystalline structure.

Original languageEnglish
Pages (from-to)14-19
Number of pages6
JournalApplied Surface Science
Volume354
DOIs
Publication statusPublished - 2015 Nov 1

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Crystals
Sputtering
Crystalline materials
Glass
Defects
Thin film solar cells

All Science Journal Classification (ASJC) codes

  • Surfaces, Coatings and Films

Cite this

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abstract = "This study investigated the influence of stacked structures on the formation of secondary phases, as pertaining to the performance of Cu 2 ZnSn(S,Se) 4 (CZTSSe) thin film solar cells. Absorber layer precursors of ZnS/Cu/Sn (Sample A) and ZnS/Cu/Sn/Cu/Sn (Sample B) were prepared by sputtering and selenization. Secondary phases of Cu 2 SnSe 3 , Cu 2-x S and ZnS were observed at the bottom of the absorber layer in Sample A, while only ZnS secondary phases appeared in the absorber layer of Sample B. The structure of stacked precursors was shown to have a significant influence on the formation of secondary phases as well as the crystal quality of the CZTSSe absorber layer. CZTSSe thin film solar cells were prepared from a structure of glass/Mo/CZTSSe/CdS/ZnO:Al/Al. Sample B demonstrated cell efficiency of 2.4{\%}, which is far superior to the 0.75{\%} efficiency of Sample A. The existence of Cu 2-x S and Cu 2 SnSe 3 secondary phases degraded the crystal quality of the absorber layer and increased the number of defects in the crystalline structure.",
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Effect of the stacked structure on performance in CZTSSe thin film solar cells. / Wang, Li Ching; Lin, Yi-Cheng or Y. C.

In: Applied Surface Science, Vol. 354, 01.11.2015, p. 14-19.

Research output: Contribution to journalArticle

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AU - Lin, Yi-Cheng or Y. C.

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N2 - This study investigated the influence of stacked structures on the formation of secondary phases, as pertaining to the performance of Cu 2 ZnSn(S,Se) 4 (CZTSSe) thin film solar cells. Absorber layer precursors of ZnS/Cu/Sn (Sample A) and ZnS/Cu/Sn/Cu/Sn (Sample B) were prepared by sputtering and selenization. Secondary phases of Cu 2 SnSe 3 , Cu 2-x S and ZnS were observed at the bottom of the absorber layer in Sample A, while only ZnS secondary phases appeared in the absorber layer of Sample B. The structure of stacked precursors was shown to have a significant influence on the formation of secondary phases as well as the crystal quality of the CZTSSe absorber layer. CZTSSe thin film solar cells were prepared from a structure of glass/Mo/CZTSSe/CdS/ZnO:Al/Al. Sample B demonstrated cell efficiency of 2.4%, which is far superior to the 0.75% efficiency of Sample A. The existence of Cu 2-x S and Cu 2 SnSe 3 secondary phases degraded the crystal quality of the absorber layer and increased the number of defects in the crystalline structure.

AB - This study investigated the influence of stacked structures on the formation of secondary phases, as pertaining to the performance of Cu 2 ZnSn(S,Se) 4 (CZTSSe) thin film solar cells. Absorber layer precursors of ZnS/Cu/Sn (Sample A) and ZnS/Cu/Sn/Cu/Sn (Sample B) were prepared by sputtering and selenization. Secondary phases of Cu 2 SnSe 3 , Cu 2-x S and ZnS were observed at the bottom of the absorber layer in Sample A, while only ZnS secondary phases appeared in the absorber layer of Sample B. The structure of stacked precursors was shown to have a significant influence on the formation of secondary phases as well as the crystal quality of the CZTSSe absorber layer. CZTSSe thin film solar cells were prepared from a structure of glass/Mo/CZTSSe/CdS/ZnO:Al/Al. Sample B demonstrated cell efficiency of 2.4%, which is far superior to the 0.75% efficiency of Sample A. The existence of Cu 2-x S and Cu 2 SnSe 3 secondary phases degraded the crystal quality of the absorber layer and increased the number of defects in the crystalline structure.

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