Abstract
We investigate the stability of the memory state of the silica-nanoparticle-doped hybrid aligned nematic (SN-HAN) cell. The memory stability of the cell is attributed to the employed planar substrate, which is coated with a homogeneous polyimide (H-PI) film. A H-PI film with a low H-PI solid concentration gives the cell high memory stability. This is because the low H-PI solid concentration causes the film to have a high polar surface energy, trapping polar silica nanoparticles on the planar substrate tightly. The low H-PI solid concentration also gives the substrate a bumpy surface, which has a large surface area for trapping silica nanoparticles.
| Original language | English |
|---|---|
| Article number | 021702 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 50 |
| Issue number | 2 |
| DOIs | |
| Publication status | Published - 2011 Feb 1 |
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All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Effect of the polyimide concentration on the memory stability of the silica-nanoparticle-doped hybrid aligned nematic cell. / Huang, Chi-Yen; Chen, Jian Hong; Hsieh, Chia Ting; Song, Heng Cheng; Wang, Yu-Wu; Horng, Lance; Shih, Yu-Tai; Hwang, Shug June.
In: Japanese Journal of Applied Physics, Vol. 50, No. 2, 021702, 01.02.2011.Research output: Contribution to journal › Article
TY - JOUR
T1 - Effect of the polyimide concentration on the memory stability of the silica-nanoparticle-doped hybrid aligned nematic cell
AU - Huang, Chi-Yen
AU - Chen, Jian Hong
AU - Hsieh, Chia Ting
AU - Song, Heng Cheng
AU - Wang, Yu-Wu
AU - Horng, Lance
AU - Shih, Yu-Tai
AU - Hwang, Shug June
PY - 2011/2/1
Y1 - 2011/2/1
N2 - We investigate the stability of the memory state of the silica-nanoparticle-doped hybrid aligned nematic (SN-HAN) cell. The memory stability of the cell is attributed to the employed planar substrate, which is coated with a homogeneous polyimide (H-PI) film. A H-PI film with a low H-PI solid concentration gives the cell high memory stability. This is because the low H-PI solid concentration causes the film to have a high polar surface energy, trapping polar silica nanoparticles on the planar substrate tightly. The low H-PI solid concentration also gives the substrate a bumpy surface, which has a large surface area for trapping silica nanoparticles.
AB - We investigate the stability of the memory state of the silica-nanoparticle-doped hybrid aligned nematic (SN-HAN) cell. The memory stability of the cell is attributed to the employed planar substrate, which is coated with a homogeneous polyimide (H-PI) film. A H-PI film with a low H-PI solid concentration gives the cell high memory stability. This is because the low H-PI solid concentration causes the film to have a high polar surface energy, trapping polar silica nanoparticles on the planar substrate tightly. The low H-PI solid concentration also gives the substrate a bumpy surface, which has a large surface area for trapping silica nanoparticles.
UR - http://www.scopus.com/inward/record.url?scp=79951877169&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=79951877169&partnerID=8YFLogxK
U2 - 10.1143/JJAP.50.021702
DO - 10.1143/JJAP.50.021702
M3 - Article
AN - SCOPUS:79951877169
VL - 50
JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes
SN - 0021-4922
IS - 2
M1 - 021702
ER -